Design of MMIC SPDT Switches in the ISM Band Using GaAs MESFETs

In this paper, an asymmetric topology of MMIC SPDT switch was proposed to increase the isolation in the receiving path and decrease the insertion loss with higher P1dB in the transmitting path for the ISM band. This SPDT switch was implemented with 0.5㎛ GaAs MESFETs processed by ETRI for the IDEC MPW project. For the receiving path the measured insertion losses were 1.518dB at 3GHz and 1.777dB at 5.75GHz and the isolations were 38.474dB at 3GHz and 29.125dB at 5.75GHz. For the transmitting path the insertion losses were 0.916dB at 3GHz and 1.162dB at 5.75GHz and the isolations were 23.259dB at 3GHz and 16.632dB at 5.75GHz. Compared to the symmetric topology the isolations of the receiving path for the asymmetric one were improved by 15.9dB at 3GHz and 11.9dB at 5.75GHz and its insertion loss was increased by about 0.6dB. In addition, P1dB of 21.5 dBm for the transmitting path was obtained, which is increased by 3.86dB compared to the symmetric one.

GaAs MESFET를 이용한 ISM 대역 MMIC SPDT 스위치 설계

본 논문에서는 ISM대역에서 수신경로의 격리도를 크게 송신경로의 삽입손실은 작게 하며 동시에 P1dB를 크게 하는 비대칭구조의 MMIC SPDT 스위치를 제안하였으며, 이를 ETRI에서 지원하는 IDEC MPW의 0.5㎛ GaAs MESFET으로 제작하였다. 이 SPDT 스위치 수신경로의 삽입손실은 3GHz에서 1.518dB, 5.75GHz에서 1.777dB이고, 격리도는 3GHz에서 38.474dB, 5.75GHz에서 29.125dB로 측정되었다. 그리고, 송신경로의 삽입손실은 3GHz에서 0.961dB, 5.75GHz에서 1.162dB이고, 격리도는 3GHz에서 23.259dB, 5.75GHz에서 16.632dB였다. 비대칭구조의 스위치는 대칭구조에 비하여 수신경로의 격리도가 3GHz에서 15.9dB, 5.75GHz에서 11.9dB 정도 개선되었으며, 삽입손실은 약 0.6dB 정도 증가하였다. 또한, SPDT 스위치 송신경로의 P1dB는 21.5dBm로 대칭구조에 비하여3.86dB 증가하였다.