• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• Journal of Korean Society of Archives and Records Management
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• v.20 no.1
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• pp.139-158
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• 2020

This study is the first paper to introduce in the country the preview of RiC-CM v0.2, the standard for the description of records based on archival principles by the ICA in December 2019, and an early stage of research that considers how to apply it at archive management. This study was conducted as follows. First, this study compared and analyzed entities, attributes, and relations of RiC-CM v0.1 and v0.2, and extracted the characteristics of version 0.2. Second, this study tried to confirm the semantic structure of the archives by constructing the ontology modeling in consideration of the basic principle and the extracted characteristics of version 0.2, and built ontology modeling using Protégé. Finally, this study figured out the differences from version 0.1 through entering individuals into Protégé and examined how the characteristics of version 0.2 was represented by ontology.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.32 no.3
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• pp.252-255
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• 1999

The quality characteristics of the Korean traditional salt-fermented fish sauces, the traditional anchovy sauce (TAS) and the sandlance sauce(TKS) were evaluated comparing to the commercial anchovy sauce (CAS) and sandlance sauce (CKS). The acidity was higher in TKS than in TAS, whereas the contents of VBN, total-N and amino-N were higher levels in TAS. In color values, L and b values in TAS were generally higher than those in TKS, whereas a and ${\Delta}E$ values were higher in TKS. The contents of total free amino acids in TAS and TKS were $12.40\;g\%$ (w/v) and $9.549 g\%$ (w/v), respectively. The contents or six amino acids, alanine, glutamic acid, leucine, isoleucine, valine and Iysine were higher in TAS, whereas the contents of arginine, glutamic acid, leucine, alanine and valine were higher in TKS. Nucleotides such as IMP and hypoxanthine were principal components in both TAS and TKS. The nitrogen related compounds, TMAO, TMA and total creatinine were determined to be $108.8\;mg\%$ (w/v), $60.5\;mg\%$ (w/v), $62.4\;mg\%$ (w/v) in TAS, and those in TKS were $60.1\;mg\%$ (w/v), $24.1\;mg\%$ (w/v), $67.6\;mg\%$ (w/v), respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.72-80
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• 1993

We fabricated 0.3um gate length inverse-T gate MOS(ITMOS) and conventional lightly doped drain oxide spacer MOS(LDDMOS), and studied electrical characteristics for comparison. Threshold voltage of 0.3um gate length device was 0.58 V for ITMOS and 0.6V for LDDMOS. Measured subthreshold characteristics showed a slope of 85mV/decades for both ITLDD and LDDMOS. Maximum transconductance at V S1ds T=V S1gs T=3.3V was 180mS/mm for ITMOS and 163mS/mm for LDDMOS respectively. GIDL current was observed to be 0.1pA/um for ITOMS and 0.8pA/um for LDDMOS. Substrate current of ITMOS as a function of drain current was found to be reduced by a foactor of 2.5 compared with that of LDDMOS.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.54 no.3
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• pp.133-138
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• 2005

This paper presents a characteristics of horizontal swing angle in V type suspension string sets for 765kV T/L. The design of V type suspension string set does not differ from that of general string set for general towers, but it prevents instabilities from swing motion by the horizontal angle and by the wind pressure. We were designed specially 6 conductor yoke, arcing horn and earth horn. And we were decided to 550mm for a distance of strings. We were carried out characteristics of horizontal swing test and movement of mass center test for V-string sets of 400kN single, 300kN double and 400kN double. This products will be used for 765kV T/L of 1 circuit in suspension towers.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.308-311
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• 2015

V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E_{1 mA/cm²} = 27 (initial 39) after application of a pulse current of 100 A.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.776-782
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• 2002

The microstructure, V-Ι characteristics, and stability of ZnO-P $r_{6}$ $O_{11}$ CoO-C $r_2$ $O_3$- $Y_2$ $O_3$-based varistor ceramics were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, the varistor voltage, and the leakage current in the V-Ι characteristics. But the nonlinear exponent relatively strongly affected by cooling rate. The cooling rate also greatly affected the stability of V-Ιand dielectric characteristics for DC accelerated aging stress. On the whole, the varistors cooled with 4$^{\circ}C$/fin exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage( $V_{1㎃}$), the nonlinear exponent($\alpha$), and the dissipation factor(tan $\delta$) is -1.4%, -4.9%, and ＋60.0%, respectively, under DC accelerated aging stress such as 0.95 $V_{1㎃}$15$0^{\circ}C$/12 h)

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.48-52
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• 1998

We fabricated the newly proposed nano structure memory with SOI edge channel and a nano dot. The width of the edge channel of this device, which uses the side wall as a channel and has a nano dot on this channel region, was determined by the thickness of the recessed top-silicon layer of SOI wafer. The size of side-wall nano dot was determined by the RIE etch and E-Beam lithography. The I$_{d}$-V$_{d}$, I$_{d}$-V$_{g}$ characteristics of the devices without nano dots and memory characteristics of the devices with nano dots were obtained, where the voltage scan was done between -20 V and 14 V and the threshold voltage shift was about 1 V.t 1 V.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.71-78
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• 1994

We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.