• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.279-283
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• 2003

In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.325-329
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• 1996

We report on p-type arsenic doping of metalorganic vapor phase epitaxially (MOVPE) grown HgCdTe on (100) GaAs. HgCdTe was grown at $370^{\circ}C$ in a horizontal reactor with using dimethy-cadmium, diisoprophyltelluride, and elemental Hg. We used tris-dimethylaminoarsenic (DMAAs) as the metalorganic for p-doping. 4micron thick CdTe and subsequently 10micron thick HgCdTe were grown on (100) GaAs substrate. Interdiffused multilayer process in which thin CdTe and HgTe layers are grown alternately and interdiffused to obtain homogeneous HgCdTe alloys was used. Arsenic was doped during CdTe growth cycle. After growth HgCdTe was annealed at $415^{\circ}C$ for 15 min and then annealed again at $220^{\circ}C$ for 3 hr, both with Hg-saturate condition. We could obtain p-doping from 2.5$\times$$10^{16}$ to 6.6$\times$$10^{17}$$cm^{-3}$, depending on the DMAAs partial pressure. With the dual Hg-annealing, activation of arsenic was aboutt 90%, which was confirmed by SIMS measurement. With only low temperature annealing at $220^{\circ}C$ for 3hr, activation efficiency was about 50%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.135-135
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• 2007

AgInSbTe물질은 compact disc rewritable(CD-RW)와 rewritable digital versatile disc (DVD+RW)과 같은 상변화 기록매체에 널리 쓰여지고 있다. 본 논문에서는 기존 AgInSbTe조성에 Te가 증가되었을때 변화하는 상변화 특성에 대한 연구를 수행하기 위하여 ($Ag_{3.4}In_{3.7}Sb_{76.4}Te_{16.5})x(Te)1-x$의 조성 (x=1,0.9,0.8,0.7)의 벌크 및 박막시료를 제작하였고 열증착방식을 이용하여 200nm 두께의 박막을 형성하였다. 각 박막은 질소분위기에서 100-300도 범위에 1 시간동안 열처리 하였고 XRD와 UV-ViS-NIR Spectrophotometer룰 통해 각 조성의 구조 및 광학적 특성 분석을 살시하였다. 또한 as-deposited 박막에 대하여 4-point probe를 사용하여 면저항을 측정하였고 AFM (atom force microscopy)을 통해 표면분석을 실시하였다.

• Investigative Magnetic Resonance Imaging
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• v.3 no.2
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• pp.154-158
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• 1999

Purpose : The purpose of this study was to find the optimum TE value for enhancing $T_2^{*}$ weighting effect and minimizing the SNR degradation and to compare the BOLD effects according to the changes of TE in 1.5T and 3.0T MRI systems. Materials and Methods : Healthy normal volunteers (eight males and two females with 24-38 years old) participated in this study. Each volunteer was asked to perform a simple finger-tapping task (sequential opposition of thumb to each of the other four fingers) with right hand with a mean frequency of about 2Hz. The stimulus was initially off for 3 images and was then alternatively switched on and off for 2 cycles of 6 images. Images were acquired on the 1.5T and 3.0T MRI with the FLASH (fast low angle shot) pulse sequence (TR : 100ms, FA : $20^{\circ}$, FOV : 230mm) that was used with 26, 36, 46, 56, 66, 76ms of TE times in 1.5T and 16, 26, 36, 46, 56, 66ms of TE in 3.0T MRI system. After the completion of scan, MR images were transferred into a PC and processed with a home-made analysis program based on the correlation coefficient method with the threshold value of 0.45. To search for the optimum TE value in fMRI, the difference between the activation and the rest by the susceptibility change for each TE was used in 1.5T and 3.0T respectively. In addition, the functional $T_2^{*}$ map was calculated to quantify susceptibility change. Results : The calculated optimum TE for fMRI was $61.89{\pm}2.68$ at 1.5T and $47.64{\pm}13.34$ at 3.0T. The maximum percentage of signal intensity change due to the susceptibility effect inactivation region was 3.36% at TE 66ms in 1.5T 10.05% at TE 46ms in 3.0T, respectively. The signal intensity change of 3.0T was about 3 times bigger than of 1.5T. The calculated optimum TE value was consistent with TE values which were obtained from the maximum signal change for each TE. Conclusion : In this study, the 3.0T MRI was clearly more sensitive, about three times bigger than the 1.5T in detecting the susceptibility due to the deoxyhemoglobin level change in the functional MR imaging. So the 3.0T fMRI I ore useful than 1.5T.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.273-281
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• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.98-99
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• 2002

대표적인 II-VI족 극성 반도체 결정인 ZnTe[001]와 ZnCdTe MQW에서 시료의 에너지 띠보다 낮은 에너지의 펨토초 티타늄 사파이어 레이저를 이용하여 결맞는 포논을 발생시키고 그 특성을 관찰하였다. 결맞는 포논의 신호는 그림1)과 같이 반사 및 투과형 전기 광학적 샘플링(Reflective/Transmissive Electro-Optic Sampling： REOS/TEOS)방법과 여기-탐사광 방법으로 시간 영역에서 측정하였다. (중략)

• Journal of Korea Foundry Society
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• v.14 no.6
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• pp.514-519
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• 1994

일방향 응고법을 이용하여 텔루리움(Te)이 Fe-C-Si 합금 즉 주철의 응고시 흑연의 형태에 미치는 영향을 관찰하였다. Te이 산소와의 반응성향이 큼을 감안하여 수소 및 아르곤으로 응고분위기를 조절함으로써 각각의 분위기에서 나타나는 Te의 영향을 비교 분석하였다. 그 결과 아르곤 분위기에 비하여 수소분위기에서 Te의 효과가 현저하였으며, 이것은 수소가 산소의 영향력을 억제하여 Te의 산화를 방지함에 기인하는 것으로 판단되었다. 수소 분위기 하에서 Te의 효과가 극대화되었을 경우 희주철 조직은 응고속도가 극히 낮은 때에만 얻어졌으며, 미세한 편상(片狀)흑연이 평면형 응고선단을 형성하며 열전달이 일어나는 반대 방향을 따라 성장함으로써 지금까지 볼 수 없었던 독특한 조직이 관찰되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.140-144
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• 2004

CdTe thin films were grown on GaAs (100) substrates by hot wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100) film was grown as a single crystals with the different from growth plane of (III), and growth rate of CdTe thin films was found to be 30 $\AA/sec$ by SEM. To acquire a high quality CdTe thin film, the optimum temperature for the source and substrate are found to be $500^{\circ}C$ and $320^{\circ}C$, respectively, which was checked by PL.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.263-263
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• 2009

The microtstructures and properties of alloys in the pseudo-binary $Bi_2Te_3-PbTe$ system were investigated as a first step towards the design of nanostructured materials with enhanced thermoelectric properties. The liquid alloys were cooled by water quenching method. Dendritic and lamellar structures were observed clearly by using environmental scanning electron microscope(eSEM) and electron probe micro analyzer(EPMA) take into account composition ratio between $Bi_2Te_3$ and PbTe. The compound $Pb_2Bi_6Te_{11}$ precipitated as a metastable phase under all conditions. The structure of those samples changed from dendritic to lamellar by increasing $Bi_2Te_3$ ratio of composition.