• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.103-108
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• 2014

The flash memory which is exploited on hand-held devices such as smart phones is a non-volatile storage and has the benefit that it can store mass data at a small sized chip. To process queries on the mass data stored in the flash memory, the index scheme should be exploited. However, since the write operation of the flash memory is slower than the read operation and the overwrite is not supported, it is required to reevaluate the performance of the index and find out the drawbacks. In this paper, we evaluate the performance of a space division typed index scheme on the flash memory. To do this, we implement the fixed grid file and measure the average speeds of the query and update processing on a various condition and compare the value of the flash memory with that of the magnetic disk.

• Journal of Korea Multimedia Society
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• v.10 no.8
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• pp.1029-1038
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• 2007

A smart card based on the existing Java card platform executes and installs an application only when the power is supplied for a minute. And preparing for unexpected power outrage, the execution state of an application and all the data that are modified during execution are saved in the heap. This kind of frequent data update of an EEPROM data is a main cause of reducing the life-cycle of a smart card. This is because the smart card has been developed not considering the current situation that the power is always supplied, and by this time it has continuously kept its old architecture. This paper explains the high performance Java card system free power restriction. The system improves not only application saving mechanism, but memory architecture. In special, we deploy RAM for running an applet, as well as EEPROM for downloading an application. Through proposed mechanism, we can find out performance evaluation that the creation speed of an applet and the execution speed of a method increase up to 58% and 33% respectively.

• KIISE Transactions on Computing Practices
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• v.21 no.1
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• pp.88-93
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• 2015

In modern computer systems, DRAM is commonly used as main memory due to its low read/write latency and high endurance. However, DRAM is volatile memory that requires periodic power supply (i.e., memory refresh) to sustain the data stored in it. On the other hand, PCM is a promising candidate for replacement of DRAM because it is non-volatile memory, which could sustain the stored data without memory refresh. PCM is also available for byte-addressable access and in-place update. However, PCM is unsuitable for using main memory of a computer system because it has two limitations: high read/write latency and low endurance. To take the advantage of both DRAM and PCM, a hybrid main memory, which consists of DRAM and PCM, has been suggested and actively studied. In this paper, we propose a novel page replacement algorithm for hybrid main memory. To cope with the weaknesses of PCM, our scheme focuses on reducing the number of PCM writes in the hybrid main memory. Experimental results shows that our proposed page replacement algorithm reduces the number of PCM writes by up to 80.5% compared with the other page replacement algorithms.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.5
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• pp.975-981
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• 2017

In this paper, we propose a method for efficient use of energy when using flash device in WSN environment. Typical Flash devices have a drawback to be an energy efficient storage media in the energy-constrained WSNs due to the high standby energy. An energy efficient approach to deploy Flash devices into WSNs is simply turning the Flash device off whenever idle. In this regard, we make the simple but ideal approach realistic by removing these two obstacles by exploiting nonvolatile RAM (NVRAM), which is an emerging memory technology that provides both non-volatility and byte-addressability. Specifically, we make use of NVRAM as an extension of metadata storage to remove the FTL metadata scanning process that mainly incurs the two obstacles. Through the implementation and evaluation in a real system environment, we verify that significant energy savings without sacrificing I/O performance are feasible in WSNs by turning off the Flash device exploiting NVRAM whenever it becomes idle. Experimental results show that the proposed method consumes only about 1.087% energy compared to the conventional storage device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.29-29
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• 2009

현재 고집적 비휘발성 메모리 소자로는 MRAM (Magnetic Random Access Memory)과 PRAM (Phase Magnetic Random Access Memory)이 활발하게 미국과 일본, 한국 등에서 다양한 연구가 진행되어 오고 있다. 이 중에서 MRAM은 DRAM과 비슷한 10 ns의 빠른 읽기/쓰기 속도와 비휘발성 특성을 가지고 있으며, 전하를 저장할 커패시터가 필요 없고, 두 개의 자성충에 약 10 mA 정도의 전류를 가하면 그때 발생하는 약 10 Oe의 자장을 개개의 비트를 write하고, read 시에는 각 비트의 자기저항을 측정함으로써 데이터를 저장하고 읽을 있으므로, 고집적화가 가능성하다 [1]. 현재 우수한 박막 재료가 개발 되었으나, 고집적 MRAM 소자의 양산에는 해결 하여야 하는 문제점이 있다. 특히 다층 박막으로 구성되어 있으므로 식각 공정의 개발이 필수적이다. 지금까지 MRAM 재료의 식각은 주로 Ion milling, ICP, ECR등의 플라즈마 장치를 되었고, 식각 가스로는 할로겐 기체와 금속카보닐 형성을 위한 Co/$NH_3$와 $Ch_3OH$ 기체가 이용되고 있다. 그러나 할로겐 계열의 기체를 사용할 경우, 식각 부산물들의 높은 끓는점 때문에 식각 부산물이 박막의 표면에서 열적 탈착에 의하여 제거되지 않기 때문에 높은 에너지를 가지는 이온의 도움에 의한 식각이 필요하다. 또한 Cl 계열의 기체를 사용할 경우, 식각 공정 후, 시료가 대기에 노출되면 대기 중의 수분과 식각 부산물이 결합하여 부식 현상이 발생하게 된다. 그러므로 이를 방지하기 위한 추가 공정이 요구된다. 최근에는 부식 현상이 없고, MTJ 상부에 사용되는 Ta 또는 Ti Hard mask와의 높은 선택비를 가지는 $CH_3OH$ 또는 CO/$NH_3$가 사용되고 있다. 하부 박막에 따른 식각 특성에 연구와 다층의 박막의 식각 공정에 발생에 관한 발표는 거의 없다. MRAM을 양산에 적용하기 위하여서는 Main etch 공정에서 빠른 식각 공정이 필요하고, Over etch 공정에서 하부박막에 대한 높은 선택비가 요구된다. 그러므로 본 논문에서는 식각 변수에 따른 플라즈마 측정과 표면 반응을 비교하여 각 공정의 식각 메커니즘을 규명하고, Main Etch 공정에서는 $Cl_2$/Ar 또는 $BCl_3$/Ar 가스를 이용하여 식각 실험을 수행하고, Over etch 공정에는 낮은 Ta 박막 식각 속도를 가지는 $Ch_4/O_2$/Ar 또는 $Ch_3OH$/Ar 가스를 이용하고자 한다. 플라즈마 내의 식각종과 Ta 박막과의 반응을 XPS와 AES를 이용하여 분석하고, 식각 공정 변수에 따른 식각 속도, 식각 선택비와 식각 프로파일 변화를 SEM을 이용하여 관찰한다.

• Korean Journal of Food Science and Technology
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• v.28 no.6
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• pp.1171-1176
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• 1996

The changes in volatiles of the model system were analyzed by GC and GC-MS before and after retorting. The GC data were analyzed statistically by applying the analysis of variance, and 42 peaks were selected at 5% significance level. Multivariate statistical analysis was performed with these 42 peaks as independent variables. Through the stepwise discriminant analysis, 8 peaks, which corresponded to the compounds such as 2-heptanone, cis-3-hexenal, 2-pentyl-furan, 1-methyl-trans-1,2-cyclohexanediol, 2-hexanone, 3-octanone, trans, trans-nona-2,4-dienal and 1-octen-3-ol, were obtained in sequence to distinguish the samples with and without retorting. The principal component analysis of a set of 8 independent variables resulted in 3 principal components which accounted for 96.1% of the variance, while the first principal component (PC 1) explained 76.5% of the total variance. In addition, through the factor analysis of the principal components, the peaks 11, 20 and 21 could be grouped togather in accordance with the direction and the size while the peaks 9, 33 and 39 constituted the second group in the direction.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.268-274
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• 2010

Emission of heavy metals as hazardous air pollutants has been focused with tightening regulatory limits due to their hazardousness. Measurements and characteristic investigations of heavy metals emitted from a commercial power plant burning anthracite coal have been carried out. The plant consists of a circulating fluidized bed combustor, a cyclone, a boiler and an electrostatic precipitator(ESP) in series. Dust and gaseous samples were collected to measure main heavy metals including gaseous mercury before ESP and at stack. Dust emissions as total particulate matter (TPM), PM-10 and PM-2.5 at inlet of ESP were very high with 23,274, 9,555 and $7,790mg/Sm^3$, respectively, as expected, which is much higher than those from pulverized coal power plants. However TPM at stack was less than $0.16mg/Sm^3$, due to high dust removal efficiency by ESP. Similarly heavy metals emission showed high collection efficiency across ESP. From particle size distribution and metal enrichment in sizes, several metal concentrations could be correlated with particle size showing more enrichment in smaller particles. Mercury unlike other solid metals behaved differently by emitting as gaseous state due to high volatility. Removal of mercury was quite less than other metals due to it's volatility, which was 68% only. Across ESP, speciation change of mercury from elemental to oxidized was clearly shown so that elemental mercury was half of total mercury at stack unlike other coal power plants which equipped wet a scrubber.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.310-310
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• 2016

최근 NAND flash memory는 높은 집적성과 데이터의 비휘발성, 낮은 소비전력, 간단한 입, 출력 등의 장점들로 인해 핸드폰, MP3, USB 등의 휴대용 저장 장치 및 노트북 시장에서 많이 이용되어 왔다. 특히, 최근에는 smart watch, wearable device등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 유연하고 투명한 메모리 소자에 대한 연구가 다양하게 진행되고 있다. 대표적인 플래시 메모리 소자의 구조로 charge trapping type flash memory (CTF)가 있다. CTF 메모리 소자는 trap layer의 trap site를 이용하여 메모리 동작을 하는 소자이다. 하지만 작은 window의 크기, trap site의 열화로 인해 메모리 특성이 나빠지는 문제점 등이 있다. 따라서 최근, trap layer에 다양한 물질을 적용하여 CTF 소자의 문제점을 해결하고자 하는 연구들이 진행되고 있다. 특히, 산화물 반도체인 zinc oxide (ZnO)를 trap layer로 하는 CTF 메모리 소자가 최근 몇몇 보고 되었다. 산화물 반도체인 ZnO는 n-type 반도체이며, shallow와 deep trap site를 동시에 가지고 있는 독특한 물질이다. 이 특성으로 인해 메모리 소자의 programming 시에는 deep trap site에 charging이 일어나고, erasing 시에는 shallow trap site에 캐리어들이 쉽게 공급되면서 deep trap site에 갇혀있던 charge가 쉽게 de-trapped 된다는 장점을 가지고 있다. 따라서, 본 실험에서는 산화물 반도체인 ZnO를 trap layer로 하는 CTF 소자의 메모리 특성을 확인하기 위해 간단한 구조인 metal-oxide capacitor (MOSCAP)구조로 제작하여 메모리 특성을 평가하였다. 먼저, RCA cleaning 처리된 n-Si bulk 기판 위에 tunnel layer인 SiO2 5 nm를 rf sputter로 증착한 후 furnace 장비를 이용하여 forming gas annealing을 $450^{\circ}C$에서 실시하였다. 그 후 ZnO를 20 nm, SiO2를 30 nm rf sputter로 증착한 후, 상부전극을 E-beam evaporator 장비를 사용하여 Al 150 nm를 증착하였다. 제작된 소자의 신뢰성 및 내구성 평가를 위해 상온에서 retention과 endurance 측정을 진행하였다. 상온에서의 endurance 측정결과 1000 cycles에서 약 19.08%의 charge loss를 보였으며, Retention 측정결과, 10년 후 약 33.57%의 charge loss를 보여 좋은 메모리 특성을 가지는 것을 확인하였다. 본 실험 결과를 바탕으로, 차세대 메모리 시장에서 trap layer 물질로 산화물 반도체를 사용하는 CTF의 연구 및 계발, 활용가치가 높을 것으로 기대된다.

• Journal of KIISE
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• v.42 no.11
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• pp.1314-1321
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• 2015

Mobile devices employ buffer cache mechanisms, just as in computer systems such as desktops or servers, to mitigate the performance gap between main memory and secondary storage. However, DRAM has a problem in that it accelerates battery consumption by performing refresh operations periodically to maintain the stored data. In this paper, we propose a novel buffer cache scheme to increase the battery lifecycle in mobile devices based on a hybrid main memory architecture consisting of DRAM and non-volatile PCM. We also suggest a new buffer cache policy that allocates buffers based on process states to optimize the performance and endurance of PCM. In particular, our algorithm allocates each page to the appropriate position corresponding to the state of the application that owns the page, and tries to ensure a rapid response of foreground applications even with a small amount of DRAM memory. The experimental results indicate that the proposed scheme reduces the elapsed time of foreground applications by 58% on average and power consumption by 23% on average without negatively impacting the performance of background applications.

• Journal of the Korean Wood Science and Technology
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• v.35 no.1
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• pp.73-80
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• 2007

This study was carried out to separate the heavy toxic metals in eco-building materials by low-temperature pyrolysis, especially arsenic (As) compounds in CCA wood preservative as a solid in char. The pyrolysis was carried out to heat the CCA-treated Hemlock at $280^{\circ}C$, $300^{\circ}C$, $320^{\circ}C$, and $340^{\circ}C$ for 60 mins. Laboratory scale pyrolyzer composed of [preheater$\rightarrow$pyrolyzer$\rightarrow$1st water scrubber$\rightarrow$2nd bubbling flask with 1% $HNO_3$ solution$\rightarrow$vent], and was operated to absorb the volatile metal compound particulates at the primary water scrubber and the secondary nitric acid bubbling flask with cooling condenser of $4^{\circ}C$ under nitrogen stream of 20 mL/min flow rate. And the contents of copper, chromium and arsenic compounds in its pyrolysis such as carbonized CCA treated wood, 1st washing and 2nd washing liquors as well as its raw materials, were determined using ICP-AES. The results are as follows : 1. The yield of char in low-temperature pyrolysis reached about 50 percentage similar to the result of common pyrolytic process. 2. The higher the pyrolytic temperature was, the more the volatiles of CCA, and in particular, the arsenic compounds were to be further more volatile above $320^{\circ}C$, even though the more repetitive and sequential monitorings were necessary. 3. More than 85 percentage of CCA in CCA-treated wood was left in char in such low-temperature pyrolytic condition at $300^{\circ}C$. 4. Washing system for absorption of volatile CCA in this experiment required much more contacting time between volatile gases and water to prevent the loss of CCA compounds, especially the loss of arsenic compound. 5. Therefore, more complete recovery of CCA components in CCA-treated wood required the lower temperature than $320^{\circ}C$, and the longer contacting time of volatile gases and water needed the special washing and recovery system to separate the toxic and volatile arsenic compounds in vent gases.