• Title/Summary/Keyword: 회절 효과

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Lens system design for head mounted display using schematic eyes (정밀모형안을 이용한 Head Mounted Display용 렌즈계 설계)

  • 박성찬;안현경
    • Korean Journal of Optics and Photonics
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    • v.14 no.3
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    • pp.236-243
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    • 2003
  • We discussed the design of lens module schematic eyes equivalent to finite model eyes, which are used to model the human eye based on spherical aberration and Stiles-Crowford effect. The optical system for head mounted display (HMD) is designed and evaluated using lens module schematic eyes. In addition to a compact HMD system, an optical system with high Performance is required. To satisfy these requirements, we used diffractive optical elements and aspheric surfaces so that the color and mono-chromatic aberrations were corrected. The optical system for HMD is composed of 0.47 inch micro-display of SVGA grade with 480,000 pixels, a plastic hybrid lens for the virtual image, and the lens module schematic eyes. The designed optical system fulfills the current specifications of HMD: such as, EFL of 31.25 mm, FOV of 24H$\times$18V$\times$30D degrees, and overall length of 59.1 mm. As a result, we could design an optical system useful for HMD; the system is expected to be comfortable while the user wears it.

Effect of Guest Molecules on Structure and Properties of Polymer/beta-Cyclodextrin Inclusion Compound Hybrid Films (고분자/베타-사이클로덱스트린 포접 화합물로 이루어진 고분자 혼성체 필름의 물성 및 구조에 미치는 게스트 분자의 영향)

  • Bae, Joonwon
    • Applied Chemistry for Engineering
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    • v.32 no.5
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    • pp.504-508
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    • 2021
  • In this study, the effect of molecular features of guest molecules on the structure, property, and formation of poly(vinyl alcohol) (PVA)/beta-cyclodextrin (bCD) inclusion compound hybrid films was investigated using three types of guest molecules such as hydroquinone (HQ), arbutin (AB), and tranexamic acid (TA). First, the successful formation of inclusion compounds between bCD and the guest molecules, and polymer/inclusion compound hybrid were proved using Raman spectroscopy. The effect of bCD-based inclusion compounds on the structure and property of PVA matrix composites containing inclusion compounds was also studied using X-ray diffraction (XRD) and thermal analyses such as differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). It was notable that the effect of TA to the crystalline structure of the PVA was significantly different from that of using other guest molecules including HQ and AB. It was also supported by a simple molecular simulation result. This article will be a good example for demonstrating the effect of molecular characteristics on the inclusion compound formation in polymer films, which can provide important information for relevant future research.

Photoluminescent Properties of EuGa2S4 and Eu2Ga2S5 Phosphors (EuGa2S4와 Eu2Ga2S5 형광체의 발광 특성)

  • Young-Sik Cho;Min-Kyeong Jang;Young-Duk Huh
    • Journal of the Korean Chemical Society
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    • v.67 no.4
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    • pp.236-240
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    • 2023
  • Non-concentration quenching EuGa2S4 and Eu2Ga2S5 phosphors, in which the concentration of Eu2+ activator ion is 100%, were synthesized by a solid state reaction at temperature range from 800 to 1050 ℃. The wavelength of maximum intensity (λmax) of EuGa2S4 and Eu2Ga2S5 phosphors are 546 and 581 nm, respectively. An examination of the X-ray diffraction patterns and photoluminescent properties of EuGa2S4 and Eu2Ga2S5 phosphors revealed that EuGa2S4 and Eu2Ga2S5 phosphors were formed at lower temperature range (800~900 ℃) and higher temperature range (1000~1050 ℃), respectively.

Quantum Dot Sensitized Solar Cell Using PbS/ZnO Nanowires (황화납/산화아연 나노선을 이용한 양자점 감응형 태양전지)

  • Kim, Woo-Seok;Yong, Ki-Jung
    • Clean Technology
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    • v.16 no.4
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    • pp.292-296
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    • 2010
  • We fabricated quantum dot sensitized solar cells(QDSSC) using PbS as a sensitizer and measured the solar energy conversion efficiency. After growing ZnO nanowires on the substrate by low temperature ammonia solution reaction, PbS QDs were deposited on ZnO nanowires by SILAR(Successive ionic layer adsorption and reaction) method. The morphology and crystallinity of PbS/ZnO nanowires were studied by SEM and XRD. In this study, the maximum conversion efficiency of QDSSC using PbS was 0.075% at one sun, which was lower than that of QDSSC using other sensitizers. The reasons it showed relatively low efficiency are i) the probability of type-I band gap arrangement between ZnO and PbS, ii) disturbance of electron migration by the various-sized PbS band gap, iii) stability dip by the chemical reaction of PbS QDs with electrolyte. To solve these problems, researches about controlling the size distribution of PbS and new type electrolyte would be needed.

Synthesis and characterization of Pb10-xCux(PO4)6O polycrystalline samples

  • Huiwon Kim;Minsik Kong;Minjae Kim;Seohee Kim;Jong Mok Ok
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.4
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    • pp.5-9
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    • 2023
  • Lee, Kim, et al. reported in July 2023 that a modified lead apatite material, Pb10-xCux(PO4)6O (0.9 < x < 1.1), exhibited superconductivity at room temperature and atmospheric pressure [1, 2]. However, their X-ray diffraction data clearly showed the presence of impurity phases, including Cu2S, raising uncertainty about the sample quality. Subsequent studies have been conducted; however, different samples exhibited various physical properties. To verify the recipe for the sample growth process, we synthesized samples following the methodology outlined in the reference [1, 2]. An analysis of the structure and physical properties of the synthesized sample reaffirms the critical importance of high-quality sample growth.

Catalytic Oxidation of Aromatic Compounds over Spent Ni-Mo and Spent Co-Mo based Catalysts: Effect of Physico-chemical Pretreatments (폐 Ni-Mo 및 폐 Co-Mo계 촉매상에서 방향족 화합물의 촉매산화: 물리화학적 전처리 효과)

  • Shim, Wang Geun;Kang, Ung Il;Kim, Chai
    • Applied Chemistry for Engineering
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    • v.21 no.1
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    • pp.63-70
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    • 2010
  • Transition metal based spent catalysts (Ni-Mo and Co-Mo), which were scrapped from the petrochemical industry, were reused for the removal processes of volatile organic compounds (VOCs). Especially the optimum regeneration procedures were determined using the removal efficiency of VOCs. In this work, the spent Ni-Mo and spent Co-Mo catalysts were pretreated with different physic-chemical treatment procedure: 1) acid aqueous solution, 2) alkali solution, 3) chemical agent and 4) steam. The various characterization methods of spent and its regenerated catalysts were performed using nitrogen adsorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM) equipped with an energy dispersive spectrometry (EDS). It was found that all spent catalysts were found to be potentially applicable catalysts for catalytic oxidation of benzene. The experimental results also indicated that among the employed physico-chemical pretreatment methods, the oxalic acid aqueous (0.1 N, $C_2H_2O_4$) pretreatment appeared to be the most efficient in increasing the catalytic activity, although the catalytic activity of spent Ni-Mo and spent Co-Mo catalysts in the oxidation of benzene were greatly dependent on the pretreatment conditions. The pretreated spent catalysts at optimum condition could be also applied for removing other aromatic compounds (Toluene/Xylene).

Template Synthesis of Ordered-Mesoporous Tin Oxide for Lithium-ion Battery Anode Materials (주형 합성법을 통해 합성된 다공성 주석 산화물을 적용한 리튬이차전지용 음극재 연구)

  • Seo, Gyeongju;Choi, Jaecheol;Lee, Yong Min;Ko, Chang Hyun
    • Journal of the Korean Electrochemical Society
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    • v.17 no.2
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    • pp.86-93
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    • 2014
  • Mesoporous tin oxide (meso-$SnO_2$) with 5 nm mesopore and well-aligned $SnO_2$ nanowire-bundles with 5~7 nm diameters were prepared by template synthesis method. In addition to meso-$SnO_2$, meso-$SnO_2$/$SiO_2$, which has almost the same structure as meso-$SnO_2$ including $SiO_2$ used as the template were prepared by the modification of template synthesis. X-ray diffraction, N2 adsorption-desorption isotherms, transmission electron microscopy observed structures of meso-$SnO_2$ and meso-$SnO_2$/$SiO_2$. Although the meso-$SnO_2$/$SiO_2$ showed some positive evidences to suppress the volume change of meso-$SnO_2$ through cyclic voltammogram, electrochemical impedance spectroscopy, and voltage profiles during cycling, its cycle life was not improved highly to address modified structural effects. Thus, further study might be done to control the nanostructure of meso-$SnO_2$/$SiO_2$ for enhanced cycle performance.

Effects of Aging on Properties of MgO-Partially Stabilized Zirconia (마그네시아 부분안정화 지르코니아 소결체의 특성에 미치는 열처리 효과)

  • 정형진;오영제;이홍림
    • Journal of the Korean Ceramic Society
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    • v.24 no.3
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    • pp.243-250
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    • 1987
  • The effects aging on some properties and thermal-shock behavior of zirconia partially stabilized with 9 mol% MgO (9MZ) were studied. 9MZ specimens were aged over $1200^{\circ}$-$1400^{\circ}C$ for 12hours subsequently, after sintering at $1650^{\circ}C$ for 4 hours. Fracture strength(both before and after thermal-shock test), linear thermal expansion, monoclinic fraction and phase transition by XRD, density, galvanic potential and microstructure were measured. Quantitative chemical analysis around the grain-boundary of the specimen aged at $1350^{\circ}C$ was also conducted by EDX. The aging of 9MZ specimen causes a thermal decomposition of cubic-$ZrO^{2}$ into the formation metastable tetragonal-$ZrO^{2}$ and MgO. The former increases the residual strength after thermal-shock test and the latter improves the thermal-shock resistance due to thermal conduction through the continuous magnesia phase and the formation of monoclinic phase content in matrix were increased with decreasing the aging temperature from $1400^{\circ}C$ to $1200^{\circ}C$. Galvanic potential of the aged specimen exhibited a proper emf characteristic.

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Growth of ZnS nanocluster thin films by growth technique and investigation of structural and optical properties (용액성장법(Solution growth technique)에 의한 ZnS nano 입자 박막성장 및 구조적, 광학적 특성)

  • 이종원;임상철;곽만석;박인용;김선태;최용대
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.3
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    • pp.199-204
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    • 2000
  • In this study, the ZnS nanosized thin films that could be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their structural and optical properties were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). When the growth temperature was $75^{\circ}C$, the surface morphology and the grain size uniformity were the best. The energy band gaps of samples were determined from the optical transmittance valued, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS, demonstrating that the quantum size effect of SGT grown ZnS is remarkable. Photoluminescence (PL) peaks were observed at the positions corresponding to the lower energy than that to energy band gap, illustrating that the surface states were induced by the ultra-fineness of grains in ZnS films. Particularly, for the first time, it is reported for the SGT grown ZnS that the PL peaks were shifted depending on the grain size.

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Effects of The Substrate Temperature and The Thin film Thickness on The Properties of The Ga-doped ZnO Thin Film (기판온도 및 박막두께가 Ga-doped ZnO 박막의 특성에 미치는 영향)

  • Cho, Won-Jun;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.1
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    • pp.6-13
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    • 2010
  • In this study, Ga-doped ZnO (GZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperatures $100{\sim}400^{\circ}C$ and thin film thickness by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the GZO thin films. It is observed that all the thin films exhibit c-axis orientation and a (002) diffraction peak only. The GZO thin films, which were deposited at $T=300^{\circ}C$ and 400 nm, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.4^{\circ}$. AFM analysis shows that the formation of relatively smooth thin films are obtained. The lowest resistivity ($8.01{\times}10^{-4}\;{\Omega}cm$) and the highest carrier concentration ($3.59{\times}10^{20}\;cm^{-3}$) are obtained in the GZO thin films deposited at $T=300^{\circ}C$ and 400 nm. The optical transmittance in the visible region is approximately 80 %, regardless of process conditions. The optical band-gap shows the slight blue-shift with increase in doping which can be explained by the Burstein-Moss effect.