• 한국전기전자재료학회논문지
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• 제28권12호
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• pp.776-780
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• 2015

In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.101-105
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• 2016

The basic characteristics of glass are highly fragile and brittle consequences the ultimate purpose of glass manufacturing is to make a transparent glass with complex shape. In order to solve this problem, mechanical properties of glass can be increased by crystallization of its amorphous glass. However, glass-ceramics has become opaque through crystallization process due to the distracted interface of glass by precipitated particles. This study has been investigated thermal processing conditions of LAS transparent glass-ceramic by using DTA (differential thermal analysis), in order to control size of precipitated particle and then fabricate transparent glass-ceramic. DTA indicated that crystallization peak area was declined with increased nucleation temperature. Subsequently, we have been established optimum temperature for crystallization depending on the nucleation temperature. The transmission and thermal expansion were measured after crystallization, and the size of precipitated particle was identified in range of 20~100 nm by FE-SEM. In addition, by setting the optimized crystallization condition, with high transmission and low thermal expansion glass was synthesized through this experiment.

• 한국결정성장학회지
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• 제20권4호
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• pp.168-172
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• 2010

양전하를 갖는 poly(allylamine hydrochloride)(PAH)와 음전하를 갖는 poly(acrylic acid)(PAA) 전해질 폴리머를 사용하여 layer-by-layer(LBL) self-assembly 방법에 의해 초친수 특성을 갖는 박막을 제조하였다. PAH/PAA 박막의 밀착강도를 증가시키기 위하여 glutaraldehyde(GA) 수용액을 이용하여 amine-aldehyde의 화학반응에 따른 박막의 표면구조 변화, 막두께, 투과율, 접촉각, 밀착강도 특성을 측정하였다. PAH와 PAA 용액 침적 사이에 기판을 GA 수용액에 침적함으로써 박막의 두께는 감소하였지만 밀착강도는 2배 이상 증가하였다. 밀착강도의 증가는 PAH 와 GA의 amine-aldehyde의 화학반응에 의한 결과라는 것을 fourier transform infrared(FT-IR) spectroscopy를 사용하여 확인하였다. 제조된 PAH/PAA and PAH/GA/PAA 박막은 물 접촉각 $5^{\circ}$이하의 초친수 박막 특성을 보여주었고, 550 nm 파장에서 91.3% 이상의 높은 투과율을 나타내었다.

• 한국세라믹학회지
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• 제50권6호
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• pp.454-459
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• 2013

Recently, remote phosphors have been reported for application to white LEDs to provide enhanced phosphor efficiency compared with conventional phosphor-based white LEDs. In this study, a remote phosphor was produced by coating via screen printing on a glass substrate with different numbers of phosphor coating. The paste consists of phosphor, lowest softening glass frits, and organic binders. The remote phosphor could be well controlled by varying the phosphor content rated paste. After mounting the remote phosphor on top of a blue LED chip, CCT, CRI, and luminance efficiency were measured and values of 5300 K, 62, and 117 lm/W were respectively obtained in the 80 wt% phosphor with 3 coating layers sintered at $800^{\circ}C$.

• 한국세라믹학회지
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• 제50권6호
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• pp.470-475
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• 2013

In this study, we report that effects of a filler with a high coefficient of thermal expansion on a sealant for high-temperature ($750{\sim}850^{\circ}C$) SOFC. We designed a $SiO_2-BaO-ZnO-B_2O_3-Al_2O_3$ glass system with a softening temperature higher than $750^{\circ}C$. The properties of the glass system show not only low volumetric shrinking but also low swelling. The glass system did not create a crystal phase during along-term heat treatment. We fabricated a seal gasket with 0, 10, 15, and 20 wt% cristobalite added as filler materials with glass powder. The coefficient of thermal expansion of the seal gasket increased according to cristobalite content. During along-term heat treatment, the leak rate decreased by about 5% after a heat treatment in an oxidizing atmosphere at $750^{\circ}C$ for 2000 h, also decreasing by about 6% after a heat treatment in a reducing atmosphere at $750^{\circ}C$ for 1000 h.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.614-619
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• 2013

Recently, remote phosphor is reported for white LED enhancing of phosphor efficiency compared with conventional phosphor-based W-LED. In this study, Remote phosphor was produced by screen printing coating on glass substrate with phosphor contents rated paste and heat treatment. The paste consists of phosphor, lowest softening glass frit and organic binders. Remote phosphor can be well controlled by varying the phosphor content rated paste. After mounting remote phosphor on top of blue LED chip, CCT, CRI, and luminance efficiency were measured. The measurement results showed that CCT, CRI, and luminance efficiency were 6,645, 68, and 1,16l m/W in phosphor 80 wt.% remote phosphor sintered at $600^{\circ}C$.

• 한국재료학회지
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• 제19권12호
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• pp.657-660
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• 2009

Optical characteristics and structural changes depending on CuO content in phosphate glasses that are used in near-infrared (near-IR) filters were investigated. With phosphate glasses that contain 1-9 mol% CuO, changes in optical transmittance, optical absorption, and color coordinate were measured with a UV-VIS spectrophotometer. An XPS (X-ray photoelectron spectroscopy) analysis was performed to determine valence of copper ion that influences optical characteristics in near-IR filter glasses. Structural changes in glasses depending on CuO content were also analyzed by FT-IR (Fourier transform infrared) and Raman spectrophotometers. From the UV-VIS spectrophotometer results, strong absorption peaks at 220 & 900 nm were found and transmittance was decreased. The color coordinates of the glasses were shifted to the green color direction with CuO addition for increasing absorption of long wavelength range spectra, in spite of the amount of $Cu^{2+}$, which gives a blue color to glasses, and which was increased in XPS results. Also, structural de-polymerization of glasses with CuO addition were found by FT-IR and Raman results.

• 한국세라믹학회지
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• 제51권6호
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• pp.533-538
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• 2014

Today, silicon and epoxy resin are used as materials of conversion lenses for white LEDs on the basis of their good bonding and transparency in LED packages. But these materials give rise to long-term performance problems such as reaction with water, yellowing transition, and shrinkage by heat. These problems are major factors underlying performance deterioration of LEDs. In this study, in order to address these problems, we fabricated a conversion lenses using glass, which has good chemical durability and is stable to heat. The fabricated conversion lenses were applied to a remote phosphor type. In this experiment, the conversion lens for white LED was coated on a glass substrate by a screen printing method using paste. The thickness of the coated conversion lens was controlled during 2 or 3 iterations of coating. The conversion lens fabricated under high heat treatment temperature and with a thin coating showed higher luminance efficiency and CCT closer to white light than fabricated lenses under low heat treatment temperature or a thick coating. The conversion lens with $32{\mu}m$ coating thickness showed the best optical properties: the measured values of the CCT, CRI, and luminance efficiency were 4468 K, 68, and 142.22 lm/w in 20 wt% glass frit, 80 wt% phosphor with sintering at $800^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.