• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.94-103
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• 2007

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet the requirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since copper, which has low electrical resistivity and high resistance to degradation, has different electrical and material characteristics compared to aluminum alloy, new related materials and processes are needed to successfully fabricate the copper interconnection. In this review, some important factors of multilevel copper damascene process have been surveyed such as diffusion barrier, seed layer, organic additives for bottom-up electro/electroless deposition, chemical mechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.735-740
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• 2005

The phase transformation of Ni-B diffusion barrier by Cu diffusion was studied. The Ni-B diffusion barrier, thickness of 10(Inn, was electrolessly deposited on the electroplated Cu interconnect. The specimens were annealed either in Ar atmosphere or in $H_2$ atmosphere from $300^{\circ}C\;to\;800^{\circ}C$ for 30min, respectively. Although the Ni-B coated specimens showed the decomposition of $Ni_3B$ above $400^{\circ}C$ in both Ar atmosphere and $H_2$ atmosphere, Ni-B powders did not show the decomposition of $Ni_3B$. The $Ni_3B$ was decomposed to Ni and B in hi atmospherr: and the metallic Ni formed the solid solution with Cu and the free B was oxidized to $B_2O_3$. However, both the boron hydride and free B were not observed in the diffusion barrier after the annealing in $H_2$ atmos There. These results revealed that the decomposition of $Ni_3B$ by Cu made the Cu diffusion continued toward the Ni-B diffusion barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.103-103
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• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.164-164
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• 2016

항만 및 해양 구조물은 육상과는 비교할 수 없을 정도로 가혹한 해수 환경에서 사용되며 계속적으로 부식 손상을 받는다. 따라서 강구조물이 장기적으로 안전하게 사용되기 위해서는 적절한 방식은 물론 철저한 유지관리가 필수적이다. 한편, 현재 해양환경 중 항만, 조선, 해양산업 등에 많이 이용되는 강구조물은 이에 대응하기 위하여 일반적으로 도장방식이나 음극방식이 사용되고 있다. 음극방식은 피방식체를 일정전위로 음극 분극하는 원리로써 외부전원을 인가하거나 비전위의 금속을 희생양극으로 연결하여 방식하는 방법이다. 이와같이 해수 중 음극방식을 실시할 경우 해수 중 용존하는 많은 이온들 중에서 특히 $Ca^{2+}$ 이나 $Mg^{2+}$ 이온이 탄산칼슘, 수산화마그네슘을 주성분으로하는 화합물로 형성된다. 이렇게 생성된 전착막은 산소 확산을 방지하는 물리적 장벽을 형성하고 부식율을 감소시키는 것으로 보고되고 있다. 그러나 전착막은 소지 금속과의 결합력이 불균일 함은 물론 막을 형성하는데 있어서 장시간이 소요된다는 단점이 있다. 따라서 본 연구에서는 해수 중 음극방식 응용 원리에 의해 전착막을 형성하고, 석출속도, 밀착성 및 내식특성을 향상시키기 위해 해수 중 기체를 용해시켜 제작한 막의 특성을 분석-평가하였다. 본 연구에 사용된 기판(substrate)은 일반구조용 강(SS400)을 사용하였으며, 면적은 $70mm{\times}30mm$, 두께는 1 mm로 제작하여 실험을 진행하였다. 외부전원은 정류기(Rectifier, xantrex, XDL 35-5T)를 사용하여 3 및 $5A/m^2$ 의 조건으로 인가하였고, 양극은 Carbon Rod를 사용하였다. 이때 해수에 주입한 이산화탄소의 양은 0.5 NL/min 였다. 각 조건별로 제작된 전착막에 대해 외관관찰, 석출량, 모폴로지, 조성원소 및 결정구조 분석을 실시하였고, 밀착성 및 내식특성을 평가하기 위해 테이핑 테스트(Taping Test, JIS K 5600-5-6)와 3.5 % NaCl 용액에서 전기화학적 양극 분극 시험을 진행하였다. 시간에 따른 전착막의 외관관찰 결과 전류밀도의 증가와 함께 상대적으로 많은 피막이 형성되었고, 용해시킨 기체에 의해 더 치밀하고 두터운 피막이 형성됨을 확인할 수 있었다. 성분 및 결정구조 분석 결과 $Mg(OH)_2$ 성분의 Brucite 및 $CaCO_3$ 성분의 Calcite 구조 및 Aragonite 구조를 확인하였으며, 용해시킨 기체의 영향으로 $CaCO_3$ 성분의 Aragonite 구조가 상대적으로 많이 검출되었다. 이는 해수 중 용해된 이산화탄소의 영향으로 인해 풍부한 ${CO_3}^{2-}$ 이온이 형성되고 용액 pH를 낮게 유지시켜 Ca 화합물 형성이 용이한 환경이 조성되는 것으로 판단된다. 밀착성 및 내식성 평가를 실시한 결과 해수중 용해시킨 기체에 의해 제작한 시편의 경우 견고하고 화학적 친화력이 높은 Aragonite 결정이 표면을 치밀하게 덮어 전해질로부터 산소와 물의 침입을 차단하는 역할을 하여 기체를 용해시키지 않은 $3A/m^2$ 및 $5A/m^2$ 보다 비교적 우수한 밀착성 및 내식 특성을 보이는 것으로 사료된다.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Journal of the Korea Computer Graphics Society
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• v.24 no.2
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• pp.11-20
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• 2018

We propose a new method particle-based method that explicitly preserves thin liquid sheets for animating liquids on CPU-GPU heterogeneous computing framework. Our primary contribution is a particle-based framework that splits at thin points and collapses at dense points to prevent the breakup of liquid on GPU. In contrast to existing surface tracking methods, the our method does not suffer from numerical diffusion or tangles, and robustly handles topology changes on CPU-GPU framework. The thin features are detected by examining stretches of distributions of neighboring particles by performing PCA(Principle component analysis), which is used to reconstruct thin surfaces with anisotropic kernels. The efficiency of the candidate position extraction process to calculate the position of the fluid particle was rapidly improved based on the CPU-GPU heterogeneous computing techniques. Proposed algorithm is intuitively implemented, easy to parallelize and capable of producing quickly detailed thin liquid animations.

• Fire Science and Engineering
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• v.31 no.4
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• pp.103-110
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• 2017

With the common tendency in the accordance with the trend, low-stories built edifices that are Pilotis-oriented structured exponentially and constantly increasing its number of buildings. It inevitably contains its risks of facing conflagrations as most of its part is used as parking lots. In the parking lots, the length of the flame has a heavy-weighted possibility that it would get increased because the heat release rate gets relatively high due to the vehicle insulation. Following on top of that, due to the nature of the Pilotisconsisting of pillars, there is a risk of flame spread to the adjacent building if the same Pilotis-structured buildings are adjacent to each other, if the flame spreads to the surroundings due to the influence of the wind. Because the most of the pilotis-structured-buildings have this entrance that makes the residents be able to enter, if the entrance were plugged the resident get a serious risk of a poisonous gas and a flame. Therefore, if the parking-lots of the pilotis-structured-buildings are adjacent to each other it requires a space to prevent the place from the spread of flame. This research studied how far is appropriate to prevent flame spreading with FDS. As a result, the study found that the distance at least 3.0 m is required.

• Polymer(Korea)
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• v.24 no.2
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• pp.237-244
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• 2000

Phenolic resin used as a precursor of carbonized matrix for carbon-carbon composites was modified by addition of molybdenum disilicide (MoSi$_2$) in various concentrations of 0, 4, 12 and 20% by weight to improve the anti-oxidation properties of the composites. The green body was manufactured by a prepreg method and was submitted to carbonization up to 110$0^{\circ}C$. In this work, the oxidation behavior of carbon-carbon composites with MoSi$_2$ as an oxidation inhibitor was investigated at the temperature range of 600-100$0^{\circ}C$ in an air environment. The carbon-carbon composites with MoSi$_2$ showed a significantly improved oxidation resistance due to both the reduction of the porosity formation and the formation of mobile diffusion barrier for oxygen when compared to those without MoSi$_2$. Carbon active sites should be blocked, decreasing the oxidation rate of carbon. This is probably due to the effect of the inherent MoSi$_2$ properties, resulted from a formation of the protective layer against oxygen attack in the composites studied.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.