• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.460-463
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• 2004

본 논문은 고에너지 방사선 검출을 위한 흔합형 구조의 방사선 센서를 제작, 반응 특성을 평가하였다. 먼저, 스크린 인쇄법을 이용하여 형광체 필름을 제작하였으며, 발광스펙트럼(PL, Photoluminescence) 및 잔광 시간(decay time) 측정을 통하여 형광체의 발광 특성을 조사하였다. 제작된 혼합구조의 방사선 센서는 $2{\mu}m$ 두께의 $HgI_2$와 $150{\mu}m$ 두께의 형광체 필름으로 제작되었으며, 면적은 $2\;cm\;{\times}\;2\;cm$이다. 방사선에 대한 전기적 검출 신호의 특성을 조사하기 위해 인가전압에 따른 암전류 및 방사선민감도, 선량에 따른 검출신호를 측정하였다. 측정결과, 제작된 $HgI_2$ 필름은 방사선에 의해 형광체에서 방출된 가시광 파장을 잘 흡수하였으며, 진단영역의 저에너지 방사선에 의해 직접 전기적 신호를 발생시켜 높은 방사선 민감도를 보였다. 뿐만 아니라, 인가전압에 대해 $10\;pA/mm^2$이하의 낮은 암전류를 가졌으며, 넓은 조사선량에서 우수한 선형성을 보였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.31-36
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• 1999

The $Mg._5Zn._5SiN_2:Tb$ and $Mg._5Zn._5SiN_2:Eu$ materials were synthesized and studied to develop new phosphors for thin-film electroluminescent device application. Photoluminescence and cathodoluminescence characteristics of the synthesized phosphors were similar to general emission spectra of Eu, Tb ion, respectively. The CIE color coordinates, threshold voltage and luminance of the $Mg._8Zn._2SiN_2:Eu$ thin-film electroluminescent device fabricated by electron-beam deposition system were x=0.47, y=0.46, 47V, and 23.5 cd/$cm^2$ at 80V, respectively. The capacitance-voltage and charge-voltage characteristics of the thin film electroluminescent devices were also measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.166-166
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• 2013

최근에 희토류 이온이 도핑된 형광체를 발광 소자, 레이저, 섬광재료, 광섬유, 촉매, 디스플레이와 같은 다양한 분야에 응용하기 위한 연구에 상당한 관심이 집중되고 있으며, 희토류 이온이 도핑된 발광 물질은 음극선관, 램프 조명, 플라즈마 디스플레이, X선 검출기, 전계 방출 디스플레이 소자를 포함한 다양한 영역에 응용되고 있다. 본 연구에서는 고상 반응법을 사용하여 발광 효율이 높은 적색과 주황색 형광체를 제조하고자 서로 다른 활성체 이온 Eu3+, Sm3+의 농도를 변화 시키면서 두 종류 Ca1-1.5xTa2O6:Eux3+와 Ca1-1.5xTa2 O6:Smx3+ 형광체 분말을 합성하였다. 특히, 활성제 이온의 농도비에 따른 형광체 분말의 결정 구조, 표면 형상, 입자의 크기, 흡광과 발광 특성을 측정하였다. 그림은 활성체 이온의 함량비를 달리하여 합성한 Ca1-1.5xTa2O6:Eux3+, Ca1-1.5xTa2O6:Smx3+ 형광체 분말에서 측정한 흡광(photoluminescence excition) 스펙트럼의 결과를 나타낸 것이다. 여기 파장 399 nm로 여기 시킨 Ca1-1.5xTa2O6:Eux3+ 형광체 분말의 경우에, 발광 세기가 가장 강한 617 nm의 주 피크가 관측되었다. 또한, 여기 파장 410 nm로 여기 시킨 Ca1-1.5xTa2O6:Smx3+ 형광체 분말의 경우에는 발광 세기가 가장 강한 주 피크는 609 nm에서 나타났다. 실험 결과로부터, Eu3+와 Sm3+ 이온이 각각 도핑된 CaTa2O6 형광체의 경우에는 색 순도가 높은 파장과 발광 세기는 Eu3+ 이온인 경우에 0.15 mol, Sm3+ 이온이 도핑되는 경우에는 0.05 mol이 최적의 합성 조건임을 알 수 있었다.

• Korean Journal of Optics and Photonics
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• v.25 no.5
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• pp.254-261
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• 2014

Two types of white light-emitting diodes (LEDs) with different phosphor structures were fabricated and compared in terms of their optical characteristics. Their spectroscopic properties were analyzed as a function of temperature, from room temperature to $80^{\circ}C$. The temperature dependence of the luminance and the color coordinates showed that the decrease in luminance and change in the color coordinates of the remote-phosphor type LED were much smaller compared to the conventional white LED. These improvements were attributed to the decrease in phosphor temperature, due to the distance between the LED chip and the phosphor layer, as well as to the reduced absorption by the LED chip of the light emitted from the phosphor layer.

• Journal of Surface Science and Engineering
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• v.32 no.6
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• pp.665-670
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• 1999

PDP용 적색형광체는 penning가스(Ne 및 5% Xe혼합가스)에 의해 방출되는 147nm파장에서 쉽게 여기되어 논은 양자효율을 주는 물질로 이루어지는데 본 실험은 발광효율을 높이기 위하여 $Y_2$$O_3$:Eu, $(Y,Gd)_2$$O_3$:Eu 및 $(Y,Cd)BO_3$:Eu를 공침법으로 합성하여 부활제인 $Bu^{3+}$ /의 농도, Flux첨가에 따른 미시조직의 변화등을 여기 방출 스펙트럼을 통해 발광효율을 조사하여 다음과 같은 결론을 얻었다. $Y_2$$O_3$:Eu 형광체 합성시 최적조정은 $Y_2$$O_3$에 대한 $Eu_2$$O_3$의 몰비는 5:1, $BaCO_3$ 첨가시 몰비는 15:1로 나타났으며 2차 소성시 $1200^{\circ}C$이상에서 1~3$\mu\textrm{m}$의 구형입상이 형성되었으며 입자의 크기, 형상은 발광특성에 영향을 미쳤다. 또 $Eu^{ 3+}$ 농도는 7wt%가 최적조건으로 나타났다.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.240-244
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• 2002

The GdOBr:Ce phosphor were prepared by solid state reaction using starting chemicals of $Gd_2O_3,\;CeO_2\;and\;NH_4Br$. Under 370nm UV excitation, GdOBr:Ce phosphors showed blue emission band with a spectral range of 410∼430nm. The maximum photoluminescence(PL) emission intensity was observed at 2mol% Ce content. In order to look for feasibility of application for low voltage filed emission display, cathodoluminescence(CL) of GdOBr:Ce phosphors were measured. CL emission spectra was found to be in the range of 410∼430nm, which is the same as PL spectra. The phosphors with 1mol% Ce concentration showed the maximum CL emission intensity. For the comparison of degradation property of the prepared phosphors with commercial ones, the electron beam was applied for 10min. From the result, GdOBr:Ce could be used as a blue phosphor for FED.

• KSBB Journal
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• v.19 no.1
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• pp.27-32
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• 2004

2-Dimensional fluorescence sensor has a wide range of excitation and emission wavelengths, that some biogenic fluorphors in a biological process can be monitored simultaneously. The production processes of 5-aminolevulinic aicd (ALA) by recombinant E. coli BL21 (DE3) pLysS harboring plasmid pFLS45 were on-line monitored by a 2-dimensional fluorescence sensor The characteristics of fluorescence spectrum was dependent upon physical and biological factors of a bioprocess such as culture pH, cell mass etc. Some off-line data were correlated to the fluorescence intensity well, which was monitored at some combination of excitation and emission wavelengths by the 2-dimensional fluorescence sensor.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.118-123
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• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition technique on $Al_2O_3$(0001) substrates at a substrate temperature of $550^{\circ}C$ with various oxygen pressures 100, 200 and 300 mTorr. The films grown under different growth oxygen pressures have been characterized using microstructural and luminescent measurements. The different photoluminescence (PL) characteristics with the increase in oxygen pressures may result from the change of the crystallinity and the composition ratio of Zn and Ga in the films. The luminescent spectra show a broad band extending from 300 to 600 nm peaking at 460 nm. The PL brightness data obtained from the $ZnGa_2O_4$ films grown under optimized conditions have indicated that the sapphire is a promising substrate for the growth of high quality $ZnGa_2O_4$ thin film phosphor.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1308-1314
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• 2018

$Er^{3+}$ and $Yb^{3+}$ co-doped $Y_3Ga_5O_{12}$ polycrystalline powders were prepared by using a solid-state reaction method, and their crystallinities were measured using X-ray diffraction. According to the results of X-ray diffraction, the powders showed a polycrystalline tetragonal structure. The photoluminescence and the upconversion luminescence properties of the $(Y_{0.85-x}Yb_{0.15})_3Ga_5O_{12}:Er^{3+}_x$ (x = 0.03, 0.06, 0.09, 0.12 and 0.15) phosphors were investigated in detail. Green and red upconversion emissions were observed for the phosphors excited by 980 nm radiation from a semiconductor laser. The powders exhibited strong green and weak red upconversion emission peaks at 553 and 660 nm, respectively. Also, their upconversion processes were explained using an energy-diagram analysis and the strongest upconversion intensity was emitted by the powder with a 0.12 mol $Er^{3+}$ ion concentration.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.55-55
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• 2002