• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.11-18
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• 2011

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.

• Clean Technology
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• v.16 no.3
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• pp.191-197
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• 2010

Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.

• The Korean Journal of Food And Nutrition
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• v.30 no.2
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• pp.378-387
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• 2017

To stabilize the supply of kimchi by extending the storage period of spring kimchi cabbage, this study manufactured kimchi from spring kimchi cabbage under varying storage conditions and periods, and analyzed their quality and sensory characteristics following the maturing period. Trimming loss was lowest in the group of plasma+reverse direction+predrying+HDPE film processing. The salting yield of spring kimchi cabbage stored for 12 weeks was lower than that of spring kimchi cabbage stored for 6 weeks, and the kimchi yield was low in the pre-treatment group of spring kimchi cabbage stored for 12 weeks. The firmness was slightly different according to the storage period from one month of maturation. From the perspective of pH and acidity, the maturation in the reverse direction+pre-drying+HDPE film processing group was slower than that in the normal group (<0.05). In the sensory evaluation, the preference was increased in the low temperature storage processing group as the maturation period was increased (<0.05).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.381.1-381.1
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• 2016

분석 방법의 간편함과 용이함의 장점은 물론, 시료 전처리 과정이 적어 시료물질의 임의 파괴나 훼손을 방지한다는 이유에서 최근 10년 간 많은 연구가 이루어지고 있는 대기압 질량분석 기술은 기압차이가 없는 대기압 분위기에서 질량분석이 이루어지기 때문에 시료를 질량분석기 입구 바로 앞에 스테이지를 설치하고서 시료를 이온화하는 경우가 대부분이다. 이 때문에 균질하지 않은 시료의 관심 영역을 모니터링하면서 질량분석을 하기에는 어려움이 있으며, 공간 정보를 추가한 질량분석 이미징에 한계가 있었다. 이에 본 연구팀은 질량분석기 입구에 챔버와 보조 펌프를 장착하여 강제로 기체 흐름 일으켜 시료로부터 발생한 이온을 질량분석기 입구로 유도하여, 원거리에서 시료를 이온화해도 질량분석기 입구까지 이온을 성공적으로 전달시키는 방법을 제안한다. 이를 이용하면 분석하고자 하는 시료를 현미경 스테이지 위에 위치시켜 분석하고자하는 부분을 현미경으로 확인하면서 질량분석을 할 수 있으며, 나아가 대기압 질량 분석 이미징 기술을 구현할 수 있다. 대기압 탈착/이온화원은시료에 열적 손상이 없는 조건으로 시편의 이온화 및 탈착 과정이 이루어지게 하기 위해 저온 대기압 헬륨 플라즈마 젯과 펨토초 레이저를 결합하여 대기압 이온화원을 제작하였다. 이온 전달관은 1/4" (6.35 mm) 외경의 60 cm 길이의 스테인리스 스틸관을 사용하여 질량분석기에서 약 60 cm 떨어진 현미경 위의 시료의 질량분석이 가능하게 했다. 보조 펌프의 계기압과 저온 대기압 헬륨 플라즈마 젯의 헬륨 기체의 유속을 변화시키면서 시료인 PDMS (polydimethylsiloxane) 의 질량 스펙트럼 (m/z 270.314) 세기를 관찰하여 최적의 이온 전달 조건을 찾았다. 추가로 현미경 스테이지에 정밀 2-D 자동 스캐닝 스테이지를 장착하여 질량분석 정보에 공간 정보를 더할 수 있는 질량분석 이미징 기술 방법을 개발하여 생체 시편의 질량분석 이미징을 얻었다.

• Journal of the Korea Fashion and Costume Design Association
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• v.10 no.3
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• pp.173-180
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• 2008

Cotton, wool, cotton/wool blended (80:20) and tencel fabrics were treated with low temperature oxygen plasma, enzymes (cellulase or protease), or oxygen plasma-enzyme and they were examined for dyeing and handling properties for environment friendly finishing. The appropriate conditions for cellulase treatment were enzyme concentration of 3g/l, pH of 5, and $60^{\circ}C$ for one hour, and for protease treatment were enzyme concentration of 4g/l, pH of 8, and $60^{\circ}C$ for one hour. The equilibrium uptake of a direct dye on cotton changed with plasma treatment and plasma-cellulase treatment, and the rate of dyeing slightly decreased. When wool was dyed with acid dye, the equilibrium dye uptake did not change with plasma, protease treatment nor plasma-protease treatment, however, the rate of dyeing had increased with plasma-protease treatment. From these results, it is assumed that plasma attacks the surface of the fiber, and enzyme mainly affects the inner part of the fiber. Plasma treatment did not affect mechanical properties related to the handling of fabrics. The handling test showed increased extension at maxmum load(EM), tensile energy(WT) with decreased tensile resilience (RT), and the fabrics became softer but resilience decreased slightly with enzyme treatment. The bending recidity(B), hysteresis of bending moment(2HB), and hysteresis of shear force at five degrees(2HG5) decreased, however, shear stiffness(G) increased. I knew the plasma pre-treatment made fabrics softer with lower koshi(stiffness). The handling of plasma pre-treated fabrics was better than that of enzyme-treated fabrics. When we pre-treated fabrics, the handling test showed decreased coefficient of friction(MIU), geometrical roughness(SMD), while the surface of fabrics became smoother and numeri increased. Even though compression resilience(RC) increased, fukurami(bulky property) and compressive elasticity, decreased due to the linearity of compression-thickness curve(LC) and compression energy(WC).

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.50.2-50.2
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• 2009

ZnO 는 상온에서 3.37eV의 넓은 밴드갭과 60 meV의 엑시톤 결합에너지를 가지는 직접형 반도체로서 높은 투과성, 저가의 재료비, 비독성, 친환경적인 재료로서 발광다이오드, 디스플레이 응용분야 등 많은 부분에서 관심을 받고 있다. 유리 기판은무겁고 쉽게 깨지는 특성에도 불구하고 디스플레이 응용분야에서 폭넓게 사용되고 있으나 많은 연구자들은 이러한 문제점들을 해결하기 위해 플렉서블 기판위에서의 ZnO 성장 연구를 진행하고 있다 ZnO를 성장시키는 방법에는 molecular beam epitaxy (MEB), chemical vapordeposition (CVD), 그리고 atomic layer deposition (ALD)등많은 방법들이 있다. 이 연구에서 우리는 플렉서블기판의 플라즈마 전처리에 따른 ZnO의 구조적 그리고 광학적 특성에 대해 연구하였다. ZnO는 ALD 방법에 의해 성장되었고 반응물로는 temperature controlled bath 속에서 $10^{\circ}C$와 $30^{\circ}C$로 각각 온도를 유지시킨 diethylzinc (DEZn)과 distilled water ($H_2O$)를 사용하였다. 성장된 ZnO의 표면 morphology는atomic force microscope (AFM) 과 scanning electron microscope (SEM)으로 측정하였고, 광학적, 구조적특성은 Photoluminescence (PL)와 X-ray diffraction (XRD) 방법으로 각각으로 측정 되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.224-224
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• 2010

야금학적 정련은 태양전지 소재인 실리콘의 저가화를 통한 태양전지의 단가를 낮추는데 유망한 공정이다. 이중에서도 실리콘의 전자빔정련은 고순도의 실리콘 정련에 효과적인 기술이다. 본 연구에서는 전자빔용융법을 이용하여 실리콘 정련을 수행하였으며, 제조된 실리콘의 미세구조 및 분순물농도를 측정하였다. 고진공의 챔버 하부에 수냉동도가니가 위치해있고, 상부에 100 kW출력의 전자총이 설치되었다. 실리콘은 분쇄 및 세척과 같은 전처리 없이 수냉동도가니에 250g 이 장입되었다. 전자빔때턴은 소프트웨어를 통한 헌혈, 나선형의 경로(path)와 원형의 형상(Shape)이 결합하여 원형패턴과 나선형패턴의 형상으로 실리콘에 조사되었다. 전자빔의 출력을 15 kW로 실리콘을 용융하였고 분당 0.5 kW의 속도로 서냉하였다. 제조된 실리콘은 지름 100 mm, 높이 25 mm의 버튼형상이었으며, 횡방향으로 절단하여 미세구조와 불순물거동을 분석하였다. 미세구조는 광학현미경 (OM) 과 전자현미경 (SEM)을 통하여 관찰하였고 불순물거동은 유도결합플라즈마 분광분석기(ICP-AES) 을 통하여 분석하였다. 장입된 실리콘의 초기순도는 99.5 %이고, 전자빔정련 공정 후 99.996 %까지 향상되었다. 전자빔패턴을 이용한 고순도 실리콘의 정련은 태양전지 소재 개발에 유망한 기술로 활용될 것이다.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.1
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• pp.24-28
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• 2005

New post plasma nitriding can achieve a high uniformity that have been difficult in DC nitriding and have a high productivity comparable to gas nitriding. However, it has not a enough high nitriding potential for a rapid nitriding, because surface activation or ion etching in the general plasma nitriding cannot be expected. Thus, in this study, the effects of pre-treatments with oxidation and reduction gas have been investigated to improve the nitriding kinetics of post plasma nitriding. An effective pre-treatment consisting of oxidation and reduction resulted in the increase of surface energy of STD 11. This induced the surface hardness and the effective nitriding depth of STD 11. It is thought that the increase of the surface energy and the surface area with pre-treatment promote the nucleation of nitriding layer.

• Journal of the Korean Chemical Society
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• v.36 no.2
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• pp.243-247
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• 1992

Inductively coupled plasma-atomic emission spectrometry was applied to determine the palladium in $SnO_2$ employed for a gas sensor. Since $SnO_2$ is hardly decomposed into the solution, extensive studies were devoted to the development of decomposition methods which minimize the interference effect. The matrix effects on the background level and emission intensity of the element were studied and they were compensated by using matrix matched solution.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.