• Journal of environmental and Sanitary engineering
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• v.22 no.2
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• pp.9-20
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• 2007

The incineration process has commonly used for wastes amount reduction and thermal treatments of pollutants as the technologies accumulated. However, the process is getting negative public images owing to matter of hazardous pollutants emission. Specially dioxins became a main issue and were mostly emitted from municipal solid wastes incineration. In this reason, pyrolysis/gasification/melting process is presented as an alternative of incineration process. The pyrolysis/gasification/melting process, a novel technology, is middle of verification of commercial plant and development of technologies in Korea. But the survey about the pollutant emission from the process, and background data in these facilities is necessary. So in this survey, t is investigated that the behavior of chlorobenzenes and chlorophenols in plasma type pyrolysis/gasification/melting plant of pilot scale. We investigated discharging behavior of each phase of chlorobenzene through each process in the plsasma type pyrolysis/gasification/melting process. From this result, it was found that about 99 percent of particle-phase chlorobenzene was removed, but on the other hand gas-phase chlorobenzene was increased by about 600 percent through heat exchanger, flue gas cooling, system and semi dry absorption bag filter(SDA/BF). Also, this investigation presented that di-chlorobenzene(DCB) tri-chlorobenzene(TCB), tetra-chlorobenzene(TeCB), penta-chlorobenzene (PCB), except mono-chlorobenzene(MCB) and hexa-chlorobenzene(HCB) were increased through the flue gas cooling system and the semi dry absorption bag filter(SDA/BF). It was investigated that concentration of particle-phase chlorophenol was decreased by about 66 percent, but on the other hand, concentration of gas-phase chlorophenol was increased by about 170 percent through heat exchanger, flue gas cooling system, and semi dry absorption bag filter(SDA/BF). Also, it was found that di-chlorophenol(DCP), tri-chlorophenol(TCP), and penta-chlorophenol(PCP) were increased through the flue gas cooling system, and the semi dry absorption bag filter(SDA/BF). It can be considered that small-scale pilot facility and short investigation period might cause the concentration increase through the flue gas cooling system and the semi dry absorption bag filter(SDA/BF). A further study on real-scale pilot facility and accurate investigation may be required.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.479-483
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• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.442-442
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• 2008

Hydrogen was produced by water plasma excited in very high frequency inductively coupled tube reactor. Mass spectrometry was used to monitor gas phase species at various process conditions. Water dissociation rate depend on the process parameters such as ICP power, flow-rate and pressure. Water dissociation percent in ICP reactor decrease with increase of chamber pressure and $H_2O$ flow rate, while increase with increase of ICP power. In our experimental range, maximum water dissociation rate was 65.5% at the process conditions of 265 mTorr, 68 sccm, and 400 Watt. The effect of $CH_4$ addition to a water plasma on the hydrogen production has been studied in a VHF ICP reactor. With the addition of $CH_4$ gas, $H_2$ production increases to 12% until the $CH_4$ flow rate increases up to 15 sccm. But, with the flow rate of $CH_4$ more than 20 sccm, chamber wall was deposited with carbon film because of deficiency of oxygen in gas phase, hydrogen production rate decreased. The main roles of $CH_4$ gas are to reacts with O forming CO, CHO and $CO_2$ and releasing additional $H_2$ and furthermore to prevent reverse reaction for forming $H_2O$ from $H_2$ and $O_2$. But, $CH_4$ addition has negative effects such as cost increase and $CO_x$ emission, therefore process optimization is required.

• Applied Chemistry for Engineering
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• v.28 no.6
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• pp.607-618
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• 2017

Harmful air pollutants are exhausted from the various industrial facilities including the coal-fired thermal power plants and these substances affects on the human health as well as the nature environment. In particular, nitrogen oxides ($NO_x$) and sulfur dioxide ($SO_2$) are known to be causative substances to form fine particles ($PM_{2.5}$), which are also deleterious to human health. The integrated system composed of selective catalytic reduction (SCR) and wet flue gas desulfurization (WFGD) have been widely applied in order to control $NO_x$ and $SO_2$ emissions, resulting in high investment and operational costs, maintenance problems, and technical limitations. Recently, new technologies for the simultaneous removal of $NO_x$ and $SO_2$ from the flue gas, such as absorption, advanced oxidation processes (AOPs), non-thermal plasma (NTP), and electron beam (EB), are investigated in order to replace current integrated systems. The proposed technologies are based on the oxidation of $NO_x$ and $SO_2$ to $HNO_3$ and $H_2SO_4$ by using strong aqueous oxidants or oxidative radicals, the absorption of $HNO_3$ and $H_2SO_4$ into water at the gas-liquid interface, and the neutralization with additive reagents. In this paper, we summarize the technical improvements of each simultaneous abatement processes and the future prospect of technologies for demonstrating large-scaled applications.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.53-53
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• 1999

전계방출을 이용한 평판 표시장치는 CRT가 가진 장점을 모두 갖는 동시에 얇고 가벼우며 낮은 전력소모로 완벽한 색을 구현할 수 있는 차세대 표시장치로서 이에 대한 여국가 활발히 이루어지고 있다. 여기에 사용되는 음극물질로서 실리콘이나 몰리 등을 팁모양으로 제작하여 사용해 왔다. 하지만 잔류가스에 의한 역스퍼터링이나 화학적 반응에 의해서 전계방출 성능이 점차 저하되는 등의 해결해야할 많은 문제가 있다. 이러한 문제들을 해결하기 위하여 탄소계 재료로서 다이아몬드, 다이아몬드상 카본 등을 이용하려는 노력이 진행되어 왔다. 이중 유리화 비정형 탄소는 다량의 결함을 가지고 있는 유리질의 고상 탄소 재로로서, 전기전도도가 우수하면서 outgassing이 적고 기계적 강도가 뛰어나며 고온에서도 화학적으로 안정하여 전계방출 소자의 음극재료로서 알맞은 것으로 생각된다. 유리화 비정형 탄소가루를 전기영동법으로 기판에 코팅하여 전계방출 소자를 제작하였다. 전기영동 용액으로 이소프로필알코올에 질산마그네슘과 소량의 증류수, 유리화 비정형 탄소분말을 섞어주었고 기판으로는 몰리(Mo)가 증착된 유리를 사용하였다. 균일한 증착을 위해서 증착후 역전압을 걸어 주는 방법과 증착 후 플라즈마 처리를 하는 등의 여러 가지 방법을 사용했다. 전계방출 전류는 1$\times$10-7Torr이사에서 측정하였다. 1회 제작된 용액으로 반복해서 증착한 횟수에 따라 표면의 거치기, 입자의 분포, 전계방출 측정 결과 등의 차이가 관찰되었다. 발광이미지는 전압에 따라 변화하였고, 균일한 발광을 관찰하기 위해서 오랜 시간동안 aging 과정을 거쳐야 했다. 그리고 구 모양의 양극을 사용해서 위치를 변화시키며 시동 전기장을 관찰하여 위치에 따른 전계방출의 차이를 조사하여 발광의 균일성을 알 수 있었다.on microscopy로 분석하였으며 구조 분석은 X-선 회절분석, X-ray photoelectron spectroscopy 그리고Auger electron spectroscope로 하였다. 증착된 산화바나듐 박막의 전기화학적 특성을 분석하기 위하여 리튬 메탈을 anode로 하고 EC:DMC=1:1, 1M LiPF6 액체 전해질을 사용한 Half-Cell를 구성하여 200회 이상의 정전류 충 방전 시험을 행하였다. Half-Cell test 결과 박막의 결정성과 표면상태에 따라 매우 다른 전지 특성을 나타내었다.도상승율을 갖는 경우가 다른 베이킹 시나리오 모델에 비해 효과적이라 생각되며 초대 필요 공급열량은 200kW 정도로 산출되었다. 실질적인 수치를 얻기 위해 보다 고차원 모델로의 해석이 필요하리라 생각된다. 끝으로 장기적인 관점에서 KSTAR 장치의 베이킹 계획도 살펴본다.습파라미터와 더불어, 본 연구에서 새롭게 제시된 주기분할층의 파라미터들이 모형의 학습성과를 높이기 위해 함께 고려된다. 한편, 이러한 학습과정에서 추가적으로 고려해야 할 파라미터 갯수가 증가함에 따라서, 본 모델의 학습성과가 local minimum에 빠지는 문제점이 발생될 수 있다. 즉, 웨이블릿분석과 인공신경망모형을 모두 전역적으로 최적화시켜야 하는 문제가 발생한다. 본 연구에서는 이 문제를 해결하기 위해서, 최근 local minimum의 가능성을 최소화하여 전역적인 학습성과를 높여 주는 인공지능기법으로서 유전자알고리즘기법을 본 연구이 통합모델에 반영하였다. 이에 대한 실증사례 분석결과는 일일 환율예측문제를 적용하였을 경우, 기존의 방법론보다 더 나운 예측성과를 타나내었다.pective" to workflow architectural discussions. The vocabulary suggested

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.54-61
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• 2018

Plasma Nitriding treatment was performed on STS 204Cu stainless steel samples at a temperature of $400^{\circ}C$ for 15 hours with varying $N_2$ content as 10%, 15% and 25%. Regardless of the content of $N_2$, S-Phase which is a hardened layer of Nitrogen (N) supersaturated phase, was formed in the surface of plasma treated samples. When $N_2$ content was 25%, the thickness of the hardened layer reached up to about $7{\mu}m$ and the surface hardness reached a value of $560Hv_{0.05}$, which is about 2.5 times higher than that of untreated sample (as received $220Hv_{0.05}$). From potentiodynamic polarization test, it was observed that compared to as received sample, the corrosion potential and the corrosion current density of the plasma treated samples were decreased regardless of the $N_2$ content, but the corrosion resistance was not increased much due to the precipitation of $Cr_2N$. On the other hand, pitting potential of the samples treated with 10% and 15% $N_2$ was higher than that of as received sample, however, the samples treated with 25% exhibited a lower pitting potential. Therefore, 10% $N_2$ content was selected as optimum plasma nitriding condition and to further increase both the thickness and surface hardness and the corrosion resistance of the hardened layer, different $CH_4$ content such as 1%, 3% and 5% was introduced into the plasma nitriding atmosphere. With 1% $CH_4$, the thickness of the hardened layer reached up to about $11{\mu}m$ and the surface hardness was measured as about $620Hv_{0.05}$, which is about 2.8 times that of as received sample. And the corrosion resistance of the plasma treated sample by using 1% $CH_4$ was improved significantly due to much higher pitting potential, and lower corrosion current density. When the $CH_4$ content was more than 1%, the thickness and surface hardness of the hardened layer decreased slightly and the corrosion resistance also decreased.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.115-115
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• 2018

철강재는 대량 생산이 가능하며 경제성이 뛰어나고 기계적 성질도 우수하므로 다양한 산업 분야에서 널리 사용되고 있다. 그러나 철강재는 부식 환경에 취약하기 때문에 그 용도에 따라 다양한 내식성을 부여하는 표면처리를 적용하고 있다. 일반적으로 이러한 철강 재료에 대한 내식성 표면처리로는 습식공정을 이용한 아연(Zn)도금 표면처리가 널리 적용되고 있다. 그러나 최근에는 이러한 습식공정으로 인해 발생하는 자원소모 및 환경적인 문제와 더불어 고내식성 표면처리 소재에 대한 수요가 증가함에 따라 이러한 단점을 극복할 수 있는 새로운 소재 및 기술 개발에 대한 관심이 증대되고 있다. 이러한 관점에서 기존의 습식표면처리 공정을 건식으로 대체 또는 병행하고, 현행 아연소재를 대체할 수 있는 코팅소재로써 알루미늄(Al) 이나 마그네슘(Mg)으로 대체하는 방법이 시도되고 있다. 본 연구에서는 강판의 내식성을 향상시키기 위한 방법으로 기존의 습식 표면처리 공정에서 용이하지 않은 마그네슘을 이용하여 건식 PVD 프로세스에 의해 코팅막의 제작을 시도하였다. 그리고 코팅막 제작 조건 중에서 공정압력이 코팅막의 결정배향성에 미치는 영향과 내식성과의 상관관계를 규명하고자 하였다. 즉, 여기서는 강판 및 용융알루미늄 도금강판 상에 스퍼터링법에 의해 Ar 가스에 의한 공정압력을 2, 10 및 50 mTorr로 조절하면서 마그네슘 코팅막을 $2{\mu}m$ 두께로 각각 제작하였다. 이때 제작한 막의 표면 모폴로지 관찰(SEM) 및 결정구조 분석(XRD) 결과에 의하면, 강판 및 용융알루미늄도금강판 상에 제작한 코팅막들은 공통적으로 공정압력이 증가할수록 그모폴로지의 결정립의 크기가 작고 치밀한 구조로 변하였다. 또한 그때 형성된 코팅막의 결정구조는 표면에너지가 상대적으로 높은 Mg(002)면 피크의 점유율이 감소하고 표면에너지가 낮은 Mg(101)면 피크의 점유율이 증가하는 경향을 나타내었다. 그리고 공정압력이 증가할수록 Mg 격자 간 면 간격(d-value)이 증가하는 경향을 나타내었다. 이상에서 제작한 마그네슘 코팅막의 결정성장 과정은 본 진공 플라즈마 PVD 공정중 증착가 더불어 흡착역할을 하는 Ar의 움직임에 따라 설명 가능하였다[1,2]. 코팅막의 양극분극(Polarization)측정 결과에 의하면, 공정압력이 높은 조건에서 제작한 막일수록 부동태 특성이 우수하여 내식성이 향상되는 경향을 나타내었다. 특히, 공정압력이 상대적으로 높은 50 mTorr 조건에서 제작된 코팅막이 표면 마그네슘 결정의 크기가 조밀하고 결정구조는 Mg(002)면과 Mg(101)면의 상대강도 비가 유사하여 내식성 가장 우수하였다.

• Journal of Korean Society of Disaster and Security
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• v.7 no.1
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• pp.27-33
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• 2014

This research has been shown the strategic disaster prevention and safety management's methodology that minimize the demage and loss from environmental disaster: it is made the renewable energy using the urban wastes causing the main environmental disaster, it minimize the generating cost from the environmental disaster, it gain the energy source for preparing the large-scale shutdown electricity, it gain the profit from the continuous electric power and heat energy's generating, it gain the renewal energy source from the old urban wastes' landfill, it give back the citizen the clean environment, the construction cost is able to be solved form the profit which the power plant is made the plasma gasification generation of the urban wastes, it create the new related jobs in the local government, it base to be invested the local industrial zone's commercialization due to the renewal energy power plant. Especially, in happen to the large-scale natural disaster's typhoon and earthquake, in the result generating the large-scale urban wastes, it is shown the prepared and robust model which contribute the preventing recovery of the local economy using the renewal energy of the urban wastes, and the strategic disaster prevention and safety management's method in the future city.

• Clean Technology
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• v.23 no.2
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• pp.181-187
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• 2017

The perfluorocompounds (PFCs) emitted from the semiconductor and display manufacture is treated by abatement systems which use various technologies, such as combustion, thermal, plasma, catalyst. However, it is required that the system should overcome their drawbacks with excess energy consumption and low removal efficiency. The new technology using combination of pressure swing adsorption and excess enthalpy combustion for the reduction of PFCs emissions were developed and analyzed its characteristics. PFCs concentration ratio and PFCs loss factor were calculated from measuring concentration of PFCs at the calculated by comparing concentration of PFCs at the combustor's inlet and outlet. There were performance evaluations with various gas flow for comparing energy consumption and removal efficiency with existing equipments. The concentration ratio and the loss factor of PFCs were 1.65, 8.2%, respectively, when the total gas flow of the pressure swing absorption (PSA) inlet was 204 liter per minute (LPM) and $CF_4$ concentration was 1412 ppm. In comparison with existing system at constant condition, $CF_4$ removal efficiency for a porous media combustion (PMC) showed the improvement more than 16% and the consumed energy was also reduced up to approximately 41%. Then, the total gas flow introduced into PMC and $CF_4$ concentration were 91-LPM and 2335 ppm, respectively, and the destruction and removal efficiency of $CF_4$ was about 96% at 19-LPM $CH_4$, and 40-LPM $O_2$.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.