• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.368-368
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.280.1-280.1
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.120-120
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• 2006

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.581-586
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• 2006

We have generated the argon plasma in the diode chamber based on the established coaxial electrode type and investigated the emitted visible light for emission spectroscopy. We applied various voltages $2\sim3.5kV$ to the device by 0.5kV, and obtained the emission spectrum data for the focused plasma in the diode chamber on the argon pressure of 330 mTorr. The Ar I and Ar II emission line are observed. The electron temperature and ion density have been measured by the Boltzmann plot and Saha equation from assumption of local thermodynamic equilibrium (LTE) The Ar I and Ar II ion densities have been calculated to be $\sim10^{15}/cc\;and\;~10^{13}/cc$, respectively, from Saha equation.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.