• Title/Summary/Keyword: 표면 패터닝

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The UV Laser Ablation of Cr film on Glass Substrate (UV레이저를 이용한 Cr 박막의 어블레이션)

  • Yoon, Kyung-Ku;Lee, Seong-Kuk;Kim, Jae-Gu;Choi, Doo-Sun;Whang, Kyung-Hyun;Jung, Jae-Kyoung;Jang, Won-Suk;Na, Suck-Joo
    • Journal of the Korean Society for Precision Engineering
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    • v.17 no.8
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    • pp.134-139
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    • 2000
  • In order to understand the removal mechanism and seek the optimal conditions. KrF excimer laser ablation of Cr films on glass substrates is investigated. The surface morphology of the laser-irradiated spot is examined by SEM. The measured single-shot ablation rate is found to be about two times the result of numerical analysis based on a surface vaporization model and heat conduction theory. Surface morphology examination indicates that the Cr film is removed by the sequence of melting-surface vaporization-,melt expulsion by plasma recoil and that the outmost ripple of the diffraction pattern gives a strong effect on the morphology of molten Cr during the melting and vaporization processes. To seek the optimal process parameters for micro patterning morphological investigation is carried out experimentally on samples having different chromium film thicknesses. Optimal processing conditions are determined to enhance the accuracy and quality of thin film removal for micro patterning.

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Cost-Effective Soft Lithography of Organic Semiconductors in OFETs with Compact Discs as Master Molds (Compact Disc를 마스터 몰드로 사용하는 저비용의 OFET용 유기반도체 소프트 리소그래피)

  • Sejin Park;Hyukjin Kim;Tae Kyu An
    • Journal of Adhesion and Interface
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    • v.23 no.4
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    • pp.116-121
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    • 2022
  • OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm2/Vs and mobility of devices produced by soft lithography method was 0.086 cm2/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

A Research and Application of Polyhydroxyalkanoates in Biosensor Chip (생분해성 고분자, 폴리하이드록시알카노에이트를 이용한 바이오센서 칩 연구와 그 응용)

  • Park, T.J.;Lee, S.Y.
    • KSBB Journal
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    • v.22 no.6
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    • pp.371-377
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    • 2007
  • Polyhydroxyalkanoates (PHAs) are a family of microbial polyesters that can be produced by fermentation from renewable resources. PHAs can be used as completely biodegradable plastics or elastomers. In this paper, novel applications of PHAs in biosensor are described. A general platform technology was developed by using the substrate binding domain (SBD) of PHA depolymerase as a fusion partner to immobilize proteins of interest on PHA surface. It could be shown that the proteins fused to the SBD of PHA depolymerase could be specifically immobilized onto PHA film, PHA microbead, and microcontact printed PHA surface. We review the results obtained for monitoring the specific interaction between the SBO and PHA by using enhanced green fluorescent protein, red fluorescent protein, single chain antibody against hepatitis B virus preS2 surface protein and severe acute respiratory syndrome coronavirus surface antigen as model proteins. Thus, this system can be efficiently used for studying protein-protein and possibly protein-biomolecule interactions for various biotechnological applications.

대면적 기판 위에서의 서브마이크로미터 주기와 크기를 갖는 홀 패턴 형성을 위한 포토리소그라피 공정 최적화

  • Kim, Do-Hyeong;Bae, Si-Yeong;Lee, Dong-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.244-245
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    • 2010
  • 최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 발광다이오드 및 태양전지 연구가 활발히 진행되고 있다. GaN는 높은 전자 이동도와 높은 포화 속도 등의 광전자 소자에 유리한 특성을 가지고 있으나, 고 인듐 함유량과 막질의 우수한 특성을 동시에 구현하는 것은 매우 어렵다. 이를 극복하기 위한 방법으로써 선택 영역 박막 성장법(Selective Area Growth)은 마스크 패터닝을 통해 제한된 영역에서만 박막을 성장하는 방법으로써 GaN의 막질을 향상 시킬 수 있는 방법으로 주목받고 있다. 본 논문에서는 대면적 기판에서 GaN의 막질 향상뿐만 아니라 고인듐 InGaN 박막 성장을 위하여 서브마이크로미터 주기와 크기를 갖는 홀 패턴을 포토리소그라피 공정 최적화를 통해 구현할 수 있는 방법에 대해 논의한다. 그림. 1은 사파이어 기판 위에 선택 영역 박막 성장법을 이용하여 성장한 n-GaN/활성층/p-GaN의 구조를 나타낸 그림이다. 이를 통하여 서브마이크로미터 스케일의 반극성 InGaN면 위에 높은 인듐 함유량을 가지면서도 우수한 특성을 갖는 박막을 얻을 수 있다. 본 실험을 위하여 사파이어 기판 위에 SiO2를 증착한 후 포토레지스트(AZ5206)을 도포하고 포토리소그라피 공정을 진행하여 2um 크기 및 간격을 갖는 패턴을 형성했다. 그림. 2는 AZ5206에 UV를 조사(5초)하고 현상(23초)한 패턴을 윗면(그림. 2(a))과 $45^{\circ}$ 기울인 면(그림. 2(b)) 에서 본 SEM(Scanning Electron Microscope) 사진이다. 이를 통해 약 2.2um의 홀 패턴이 선명하게 형성 됨을 볼 수 있다. 그 후 수백나노 직경의 홀을 만들기 위해서 리플로우 공정을 수행한다. 그림. 3은 리플로우 온도에 따른 패턴의 홀 모양을 AFM(Atomic Force Microscope)을 이용하여 측정한 표면의 사진이다. 이를 통해 2차원 평면에서 리플로우 온도 및 시간에 따른 변화를 볼 수 있다. 그림.3의 (a)는 리플로우 공정을 진행하기 전 패턴이고, (b)는 $150^{\circ}C$에서 2분, (c)는 $160^{\circ}C$에서 2분 (d)는 $170^{\circ}C$에서 2분 동안 리플로우 공정을 진행한 패턴이다. $150^{\circ}C$$160^{\circ}C$에서는 직경에 큰 변화가 없었고, $160^{\circ}C$에서는 시료별 현상 시간 오차에 따라 홀의 크기가 커지는 경향이 나타났다. 그러나 $170^{\circ}C$에서 2분간 리플로우 한 시료 (그림. 3(d))의 경우는 홀의 직경이 ~970nm 정도로 줄어든 것을 볼 수 있다. 홀의 크기를 보다 명확히 표현하기 위해 그림.3에 대응시켜 단면을 스캔한 그래프가 그림.4에 나타나 있다. 그림.4의 (a) 및 (b)의 경우 포토레지스트의 높이 및 간격이 일정하므로, 리플로우에 의한 영향은 거의 없었다. 그림. 4(c)의 경우 포토레지스트의 높이가 그림.4(a)에 비해 ~25nm 정도 낮은 것으로 볼 때, 과도 현상 및 약간의 리플로우가 나타났을 가능성이 크다. 그림. 4(d)에서는 ~970nm의 홀 크기가 나타나서 본 연구에서 목표로 하는 나노 홀 크기에 가장 가까워짐을 확인할 수 있었다. 따라서, $170^{\circ}C$ 이상의 온도와 2분 이상의 리플로우 시간 조건에서 선택 영역 성장을 위한 나노 홀 마스크의 크기를 제어할 수 있음을 확인하였다.

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A Study on the Characteristics and Cleanliness of Fluidic Strip Process of Environment-Friendly Aqueous Stripper (친환경 수계 박리액의 유동박리 공정 특성 및 청정성 연구)

  • Lee, Ki-Seong;Lee, Jaeone;Kim, Young Sung
    • Clean Technology
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    • v.24 no.3
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    • pp.175-182
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    • 2018
  • In this research, we investigated the cleanliness by optimizing the water content of the aqueous stripper in fluidic strip process. The stripping properties of the photoresist with optimized aqueous stripper were compared with the commercial organic stripper. The stripping performance was evaluated by electrical and optical characteristics on the surface of the transparent electrode that compare with stripped the transparent electrode surface and the rare surface before patterning by the photoresist. As a result of the photoresist stripping process of the organic stripper and the aqueous stripper optimized for water content, the aqueous stripper exhibited better electrical and optical characteristics than the organic stripper. In the case of the fluidic strip process with organic stripper, the photoresist dissolves in the stripper solution during stripping which can cause re-adsorption by contamination. Whereas that the aqueous stripper under development seems to decrease the photoresist dissolution in the stripper solution. Because the cyclodextrin contained in the stripper captures organic photoresist into hall of cyclodextrin which stripped through swelling and tearing. The photoresist residue captured by the cyclodextrin can be filtered. After the fluidic stripping process by different chemical stripping mechanism, the cleanliness of the organic stripper and aqueous stripper was compared and analyzed.

Synthesis of Silane Group Modified Polyurethane Acrylate and Analysis of Its UV-curing Property (실란기가 도입된 폴리우레탄 아크릴레이트 합성 및 자외선 경화 특성 분석)

  • Kim, Jung Soo
    • Journal of Adhesion and Interface
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    • v.22 no.3
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    • pp.98-105
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    • 2021
  • In this study, we prepared a silver nanoparticle transferable adhesive composition with transparency and adhesive properties using UV-curable urethane acrylate containing silane groups. The urethane-based adhesive composition was applied between the Ag/PET film in which silver nanoparticles were patterned on PET and the PC film to be transferred. Immediately after UV-curing with UV, PET was removed to complete the manufacture of Ag/PC film. UV-curable urethane acrylate containing silane groups was synthesized using polycaprolactone diol (PCL), isophrone diisocyanate (IPDI), 2-hydroxyethyl methacrylate (HEMA), and (3-aminopropyl) triethoxysilane (APTES). The silane group of APTES can improve interfacial adhesion by reacting with the specially treated silver nanoparticle surface of the Ag/PET film. In addition, we improved the adhesion between silver nanoparticle and PC film by mixing UV-curable urethane acrylate containing a silane group and a functional acrylic diluent used as a diluent. We analyzed the synthesis process of urethane acrylate using FT-IR, and compared the adhesive properties, optical properties, and transfer properties according to the molar ratio of APTES and the acrylic diluent composition. As a result, the best transfer properties were confirmed in the adhesive composition prepared under the conditions of PUA2S1_0.5.

Field-effect Transistors Based on a Van der Waals Vertical Heterostructure Using CVD-grown Graphene and MoSe2 (화학기상증착법을 통해 합성된 그래핀 및 MoSe2를 이용한 반데르발스 수직이종접합 전계효과 트랜지스터)

  • Seon Yeon Choi;Eun Bee Ko;Seong Kyun Kwon;Min Hee Kim;Seol Ah Kim;Ga Eun Lee;Min Cheol Choi;Hyun Ho Kim
    • Journal of Adhesion and Interface
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    • v.24 no.3
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    • pp.100-104
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    • 2023
  • Van der Waals heterostructures have garnered significant attention in recent research due to their excellent electronic characteristics arising from the absence of dangling bonds and the exclusive reliance on Van der Waals forces for interlayer coupling. However, most studies have been confined to fundamental research employing the Scotch tape (mechanical exfoliation) method. We fabricated Van der Waals vertical heterojunction transistors to advance this field using materials exclusively grown via chemical vapor deposition (CVD). CVDgrown graphene was patterned through photolithography to serve as electrodes, while CVD-grown MoSe2 was employed as the pickup/transfer material, resulting in the realization of Van der Waals heterojunction transistors with interlayer charge transfer effects. The electrical characteristics of the fabricated devices were thoroughly examined. Additionally, we observed variations in the transistor's performance based on the presence of defects in MoSe2 layer.