• Title/Summary/Keyword: 포화전류

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Patent Survey on New Sensing Technology in Electric Pourer Equipment (전력설비분야의 새로운 센싱기술 특허동향)

  • Lee, Chang-Hoan;Yeo, Woon-Dong;Kim, Jae-Woo;Bae, Sang-Jin
    • Proceedings of the KIEE Conference
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    • 2004.04a
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    • pp.89-92
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    • 2004
  • 세계적으로 전기수요와 전기품질의 중요성의 증대로 전력설비의 감시 및 보호를 위한 센싱기술에 대한 연구가 활발히 진행되고 있다. 그러나 기존의 전압 및 전류측정 장치인 철심형 변성기는 측정전압, 전류가 증가될수록 전기적 절연설계가 어렵고 외형 부피가 매우 커질 뿐만 아니라, 측정의 정확도, CT 철심의 자속포화로 인한 사고전류측정의 어려움 통의 문제점이나 단점을 가지고 있어서, 이를 해결하기 위해 센서기술의 개발이 진행되고 있다. 본 논문에서는 전력설비분야에서의 새로운 센싱기술에 관해 조사된 특허정보를 중심으로 과거의 기술흐름과 최근의 기술동향, 출원인 분석을 통한 기술의 우위현황 및 기술의 주요 분포도 등을 도식화된 그래프를 이용하여 다각적으로 분석하고자 한다.

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Torque-Fluctuation Reduction Inverter for SRM Driving (SRM구동용 맥동토오크 저감형 인버어터에 관한 연구)

  • 박성준;추영배;김철우
    • The Transactions of the Korean Institute of Power Electronics
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    • v.3 no.1
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    • pp.46-52
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    • 1998
  • This paper describes a current-shaping method for the production of constant torque of SRM under the nonlinear magnetic saturation condition. A current detection technique in the inductance increasing region and an approximation technique for modeling of nonlinear inductance profile are adopted. In the proposed system, a single switching angle control and voltage control is used to shape the current waveform for the generation of flat torque at any given load condition. Finally the validity of the proposed method was verified using a constructed 3HP 6/4 SRM.

A Study on the I-V characteristics of a delta doped short-channel HEMT (단채널 덱타도핑 HEMT의 전압-전류 특성에 대한 2차원적 해석)

  • 이정호;채규수;김민년
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.4
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    • pp.354-358
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    • 2004
  • In this thesis, an analytical model for Ⅰ-Ⅴ characteristics of an n-AlGaAs/GaAs Delta doped HEMT is proposed. 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. Parameters, e.g., the saturation velocity, 2-dimensional electron gas concentration, thickness of the doped and undoped layer(AlGaAs, GaAs, spacer etc.,) are in good agreement with the independent calculations.

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Improvement Current Control Performance of High Speed IPMSM Operation (매입형 영구자석 동기전동기의 고속운전시 전류제어 성능 개선)

  • Choi, Hyunwoo;Kim, Wonyong;Sim, Jaehun;Mok, Hyungsoo;Yang, Dooyoung;Lee, Jusuk
    • Proceedings of the KIPE Conference
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    • 2014.07a
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    • pp.271-272
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    • 2014
  • 비례-적분(PI) 제어기는 전동기의 간섭성분을 고려하지 않기 때문에 고속회전영역에서 오버슈트가 커지고, 적분기 포화로 인해 정착 시간이 느려지는 단점이 있다. 고속회전영역에서 느린 응답성을 보완하기 위해 전동기의 간섭성분을 고려하는 Cascade PI 전류제어기가 제안되었지만 오버슈트를 증가시키는 문제점이 발생한다. 본 논문에서는 Cascade PI 제어기를 소개하고 Cascade PI 제어기의 오버슈트 특성을 개선하기 위한 전류제어기를 제안하였다. 시뮬레이션을 통하여 각 제어기의 성능을 비교, 분석하였으며 실험을 통해 이를 검증하였다.

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Current Control of 12-pulse Dual Converter for High Current Coil Power Supply (대전류 코일 전원 공급장치를 위한 12펄스 듀얼 컨버터의 전류제어)

  • 송승호
    • The Transactions of the Korean Institute of Power Electronics
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    • v.7 no.4
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    • pp.332-338
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    • 2002
  • High current coil power supply for superconductivity coil of tokamak requires fast dynamics performance of di/dt and smooth change over of current direction. To meet the specification high performance DSP-based controller Is designed for 12-pulse thyristor dual converter with interphase transformer(IPT). Not only the total current of Y and $\Delta$ converter units but also the difference for those should be regulated fast and accurately. Proportional and integral controller is designed for current difference control and the controller output is compensated to $\Delta$ converter. The source voltage phase angle detection and gate pulse generation algorithm are implemented in software for higher reliability of current control. The current error Is reduced by selection of appropriate initial gating angle during the transient of change over of current direction between thyristor converters.

A Scalable Bias-dependent P-HEMT Noise Model with Single Drain Current Noise Source (드레인 전류 잡음원만을 고려한 스케일링이 가능한 바이어스 의존 P-HEMT 잡음모델)

  • 윤경식
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.10A
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    • pp.1579-1587
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    • 1999
  • Bias-dependent noise models of $0.2\mu\textrm{m}$ gate length P-HEMT's which are scalable with gate width are proposed. To predict S-parameters of the P-HEMT's the intrinsic parameters except for $\tau$ subtracted the offsets introduced in this paper are normalized to the gate width and then scaled. The small-signal model parameters are expressed as fitting functions of the drain current to $\textrm{I}_{dss}$ ratio and gate width. In addition, to estimate accurately noise parameters the noise temperature $\textrm{T}_{g}$ of the intrinsic resistance, the equivalent noise conductance $\textrm{G}_{ni}$ of the gate current noise source, and the equivalent noise conductance $\textrm{G}_{no}$ of the drain current noise source are adopted as the noise model parameters. The extracted values of $\textrm{T}_{g}$ are nearly independent of drain current and gate width and their average is around the ambient temperature. The extracted values of $\textrm{G}_{ni}$ are small enough to be neglected to the circuit characteristics. From the comparison of the noise model with only $\textrm{G}_{no}$ and that having $\textrm{T}_{g}$, $\textrm{G}_{ni}$ and $\textrm{G}_{no}$ to the measured data it is fund that even the former model is in good agreement with the measured noise parameters. Thus, from a practical point of view the noise model having only the drain current noise source is confirmed as a scalable bias-dependent model.

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Fabrication of Organic Field-Effect Transistors with Low Gate Leakage Current by a Functional Polydimethylsiloxane Layer (PDMS 기능성 박막을 이용한 적은 게이트 누설 전류 특성을 가지는 유기트랜지스터의 제작)

  • Kim, Sung-Jin
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.147-150
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    • 2009
  • We present a technique for fabricating low leakage organic field-effect transistors by a functional polydimethylsiloxane (PDMS) layer. The technique relies on the photo-chemical process of conversion of the PDMS to a silicon oxide which provides the selective growth of pentacene thin films. The reduced gate leakage current showed ${\sim}10^{-10}$ A in a linear ($V_d=-5\;V$) and saturation ($V_d=-30\;V$) region at $V_g-V_t>0$.

AC Current Sensor Using Air Core (공심코어를 사용한 교류전류 센서)

  • Park, Young-Tae;Jung, Jae-Kap
    • Journal of the Korean Magnetics Society
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    • v.15 no.1
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    • pp.48-52
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    • 2005
  • This paper describes a current sensor for precision current measurement of an electronic watt-hour meter that is going to install in houses in the future. As the current sensor is based on an cored principle (the Rogowski principle) it is not subject to usual limitations of saturation and non-linearity of general current transformers. An advantage of the developed current sensor is that non-linearity error in low current range is improved and the construction can be kept simple using an air core. We present a magnetic field analysis of the sensor using a finite-element solver. We compared the measured values versus the calculated values.

An analytical model for deriving the 2-D potential in the velocity saturation region of a short channel GaAs MESFET (단 채널 GaAs MESFET의 속도 포화영역에서 2차원 전위 도출을 위한 해석적 모델)

  • Oh, Young-Hae;Jang, Eun-Sung;Yang, Jin-Seok;Choi, Soo-Hong;Kal, Jin-Ha;Han, Won-Jin;Hong, Sun-Suck
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.11
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    • pp.21-28
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    • 2008
  • In this paper, we suggest an analytical model that can derive the I-V characteristics in the saturation region of a short channel GaAs MESFET. Instead of the pinch-off concept that has been used in the conventional models we can derive the two-dimensional potential in the depletion region in order that the velocity saturation region cannot be pinched-off and the current continuity condition can be satisfied. Obtained expression for the velocity saturation length is expressed in terms of the total channel length, channel doping density, gate voltage, and drain voltage. Compared with the conventional channel length shortening models, the present model seems to be considerably accurate and more reasonable in explaining the Early effect.

The Characteristics of Electrokinetic Remediation of Unsaturated Soil II : Numerical Analysis (불포화토의 동전기 정화 특성 II : 수치 해석적 연구)

  • Kim, Byung Il;Han, Sang Jae;Kim, Soo Sam
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.26 no.1C
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    • pp.9-17
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    • 2006
  • The numerical analysis to predicting the electrokinetic remediation behavior on unsaturated soil is carried out by aiding HERO, Hanyang Unversity Electrokinetic Remediation program, developed from the finite difference method and in the VISUAL FORTRAN environment. The analysis for the pure kaolinite under saturated conditions is performed on the results of the previous study of Acar (1997). Also the predictions to the characteristics of electrokinetic remediation on unsaturated conditions are performed and the conclusions summarized as follows. First, pH of the electrolyte in the reservoirs is not different with the degree of saturation resulted from the changes in electrical efficiency. But the advance of acid front is increased dependent on the degree of saturation in contrary to the transportation of base front. Second, below the degree of saturation of 83%, which is equivalent to the optimum water content, the removal effect increased with the decreasing of degree of saturation. But it have no effect on the efficiency of removal over the degree of saturation of 83%.