• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.438-440
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• 1995

The impedance characteristics and plasma parameters were experimentally studied in a weakly magnetized planar type, inductively coupled plasma (ICP) system. Compared with non-magnetized for system higher power transfer efficiency, stable impedance matching, enhancement of plasma density and higher electron temperature can be obtained. Such improvements are mainly due to the excitation of deeply penetrating electromagnetic wave and reduction of radial loss of electrons. In particulary, $SF_6$ (sulfur hexafluride) plasma shows unstable impedance matching in non-magnetized ICP because electronegativity of $SF_6$ effects on plasma characteristics. But, magnetized inductively coupled $SF_6$ plasma shows enough impedance matching stability to be applicable to the polysilicon etching in semiconductor process.