• Korean Journal of Optics and Photonics
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• v.19 no.2
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• pp.150-158
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• 2008

The exact transmission coefficients at the interface between a uniaxial anisotropic medium and an isotropic medium at? oblique incidence are derived by applying the extended Jones matrix method. When the birefringence of the uniaxial anisotropic medium is small ($|n_e-n_o|\;{\ll}\;n_o,\;n_e$), the exact transmission coefficients are compared with those by the conventional extended Jones matrix method by Yeh et al. They showed an excellent agreement with each other. In addition, using the exact transmission coefficients, we calculated the polarization characteristics of a light through a uniaxial medium to an incident light with arbitrary polarization state at? oblique incidence. We compared the transmittances of an unpolarized light through a pair of crossed o-type polarizers by two different methods and calculated the transmittance as the variation of the optical constants of the polarizers to evaluate of the extinction ratio. The polarization analysis method using the exact transmission coefficients can be applied to polarization characteristics of a light through a uniaxial medium with large birefringence as well as to liquid crystals and to optical anisotropic material.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.193-204
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• 1998

The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.246-254
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• 2013

Translucent opal glass was fabricated in order to substitute polycarbonate diffuser of LED lighting for the purpose of improving the durability problem. Calcium phosphate was used for the opacifier of opal glass and melted at $1550^{\circ}C$ for 2 hrs in electric furnace. Because opal glass was made by phase separation and growth of opacifier grains during cooling procedure after forming of melted glass, we identified the effect of opaque properties by the change of forming and cooling temperature, as R.T. (room temperature), $850^{\circ}C$, $1100^{\circ}C$ and $1200^{\circ}C$. As the results, it had excellent optical properties for the diffuser of LED lighting in the fabricated sample of forming and cooling at $1200^{\circ}C$, with no dazzling from direct light by high haze value over 82 % and low parallel transmittance value under 10 %. For the thermal properties, it had expressed thermal expansion coefficient of $6.352{\times}10^{-6}/^{\circ}C$ and softening point of $839^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.7-11
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• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Journal of the Korean Society of Radiology
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• v.5 no.6
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• pp.357-361
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• 2011

In this study, the liquid-crystal optical modulation X-ray detection system using a CdS which is a family of II-IV compound semiconductor was proposed. The system consist of the detector, the signal processing part, the liquid-crystal driving parts, microcontroller, and I/O parts, and was designed to be suitable for miniaturization and portable. In addition, the system can measure a wide range X-ray by using the detecting range selection. In order to evaluate the performance of the proposed system, the CdS sensor's output characteristics were confirmed in accordance with changes of dose, and excellent correlation was determined. And also, the optical penetration ratio was discussed in accordance with changes of the applied voltage by measuring the change of the liquid-crystal in accordance with changes of the applied voltage. Through these results, the characteristics of the liquid-crystal optical modulation system such as the excellent reproducibility and the noise immunity were confirmed. And we considered that the CdS cell-based liquid-crystal optical modulated portable X-ray detection system could be applied to compact, low-cost, portable system.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.31-34
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• 2018

In this study, the feasibility of ZnO/Al/ZnO flexible transparent electrodes for future flexible optoelectronic devices was investigated. All depositions were performed on PET substrates. The thicknesses of the top and bottom ZnO layers were 5-70 nm and 2.5-20 nm, respectively. The highest visible light transmittance was recorded when the thicknesses of the top and bottom ZnO layers 30 nm and 2.5 nm, respectively. 62% optical transmittance (at the wavelength of 400 nm) and sheet resistance of $19{\Omega}/{\Box}$ were measured. After repetitive bending test at a curvature radius of 5 mm, the transmittance and sheet resistance did not change.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.108-108
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• 2011

공동주택에서 2025년 정부가 추진하고 있는 Zero Energy 건축물 구현과 친환경에 대한 탄소배출 저감 문제로 재생에너지 생산시스템의 추가 적용은 반드시 필요하다. 따라서 공동주택 적용 및 활용성을 높일 수 있는 BIPV시스템 개발을 통하여 설치면적 확보와 세대 활용성을 높일 수 있도록 하는 것이 필요하다. 특히 거실 창호의 경우 주방향이 남향, 남동 또는 남서향으로 배치되어 태양광을 적용하기에 적합한 특성을 가지고 있다. 그러나 창호는 건물외피의 역할과 재실자가 조망과 정보취득을 얻을 수 있는 중요한 통로가 되기 때문에 단열 문제나 시야 차폐의 문제는 발생하지는 않도록 하는 것이 필요하다. 본 연구에서는 a-si타입 모듈 2개를 10% 투과율로 Bsck Coating 색상을 달리한 모듈과 c-si BIPV 모듈을 커튼월 창호시스템으로 개발, 일반 2중 창호시스템과 비교 평가를 위해 실제 Test bed 건물에 시공하여 시환경 및 실내 창측면 온도변화 측정 분석을 진행하였다. 현재 국내외 출시되고 있는 a-si see through 모듈은 10~30%의 투과율로 창 마감재로 대체가 가능하나 건축 환경(시환경,열환경)에 대한 분석은 전무한 상태이다. 본 연구에서는 시환경과 창유리면의 열 부하, 자외선, 적외선 차폐 및 가시광선의 투과율에 대한 평가와 Back Coating에 따른 색온도 평가를 통해서 a-si BIPV의 공동주택 세대 발코니 창호 적합성에 대한 검토를 진행하였다. 연구결과는 아래와 같다. ${\bullet}$ 실내조도는 청천공 정오기준 가시성 확보 모듈의 경우 2,300 ~ 3,500lx를 나타내고 있어 대비 현상이나 창측의 급격한 조도 변화가 적은 시환경 구축이 가능 ${\bullet}$ 12시경 휘도는 창측면, 실내 벽체, 코너 바닥면을 대상으로 a-si BIPV 모듈을 적용한 경우 휘도비가 12:1로 KS나 IESNA의 광원과 근접면의 비 20:1 범위에 모두 존재, 적합한 것으로 분석되었으나 c-si의 경우는 그림자로 인한 대비 현상이 발생, 작업 시환경 문제 발생. ${\bullet}$ 이중시스템 창호와 비교하여 단열 성능 떨어짐. 발전시간대 창유리 면 온도 상승 으로 하절기 냉방부하 증가. ${\bullet}$ 자외선은 100% 가까이 차단, 적외선은 13~42%만 투과되고 가시광선은 13% 투과율을 나타내어 일반 창에 칼라 코팅을 적용하는 것과 유사한 경향을 나타냄.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.351-355
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• 2017

In this paper, we conduct a simulation of manipulating various pulsed laser operations through tuning the modulation depth of the saturable absorber in a laser cavity. The research, showing that various pulsed operations could be manipulated from Q-switching through Q-switched mode locking to mode locking by tuning the modulation depth of the saturable absorber in a cavity, has been studied by experimental means. We conduct a simulation with the Haus master equation to verify that these experimental results are consistent with expectations from theory. The time dependence of the gain was considered to express Q-switching fluctuation through applying a rate equation with the Haus master equation. Laser operation was manipulated from mode locking through Q-switched mode locking to Q-switching as modulation depth was increased, and this result agreed well with the theoretical expectation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.330-330
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• 2012

일반적으로 투명전극 재료로서 이용되는 Indium Tin Oxide (ITO)는 높은 전기전도도에도 불구하고, 가시광선 영역에서 높은 광학적 투과도를 지니고 있다. 즉, 비저항이 $10^{-3}{\Omega}/cm$ 보다 작으면서, 380 nm에서 780 nm사이의 가시광선 영역에서 80%이상의 투과도를 가지는 우수한 transparent conducting oxide 물질로 인식되고 있다. 또한 이 물질은 가시광선 영역에서의 굴절률이 대략 2정도이기 때문에, 다른 반도체재료와 진공사이의 계면에서 발생하는 반사를 줄여, 태양광전지나 LED 등에 이용될 수 있는 무반사 코팅재로 이용될 수 있다. 이러한 이유로 현재 각 분야에서 ITO에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 ITO에 대한 기초연구로서, 전자빔 증착법으로 박막을 증착시키는 동안 증착속도에 따른 박막의 물성변화를 조사하였다. 또한 수직으로 증착할 때와 Glancing Angle Deposition 방법을 이용하였을 때, 증착속도에 따른 박막의 물성변화를 비교 분석하고자 하였다. 여기서, 증착속도는 $1{\AA}/s$에서 $4{\AA}/s$ 범위로 변화를 주었고, 증착물질과 기판의 각도는 $0^{\circ}$, $15^{\circ}$, $45^{\circ}$, $75^{\circ}$로 하였다. 먼저 수직으로 증착할 때, 증착속도의 변화에 따른 반사도, 투과도 및 굴절률과 증착단면의 구조를 비교하고, 다음으로 기판에 각도를 주어 박막을 증착하였을 때의 증착속도에 따른 박막의 광학적 및 구조적 물성의 변화를 측정하였다.