• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.44-50
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• 2013

E-glass fiber is the most widely used glass fiber for reinforced composite materials of aircrafts, automobiles and leisure equipments. But recently researches are being progressed to reduce boric oxide from 8 % to 0 (zero), as is called 'Boron free E-glass', because of increasing material cost, environmental problem, and improving chemical resistance and mechanical properties of E-glass fiber. In this study, we fabricated the bulk glass and fiber glass of 'Boron free E-glass (BF) compositions', and characterized thermal properties and optical properties. 'Boron free E-glass (BF)' was obtained by the melting of mixed batch materials at $1550^{\circ}C$ for 2 hrs with different $Al_2O_3$ compositions 5~10 %. We obtained transparent clear glass with high visible light transmittance value of 81~86 %, and low thermal expansion coefficient of $4.2{\sim}4.9{\times}10^{-6}/^{\circ}C$ and softening point of $907{\sim}928^{\circ}C$. For the chemical resistance test of 'BF' fiber samples, we identified that the higher alumina contents gives the better corrosion resistance of glass fiber.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.166-176
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• 1996

The fundamental conditions for growing $CsLiB_{6}O_{10}$ crystal, new nonlinear optical material, were investigated. Stoichiometirc mixture of $CsLiB_{6}O_{10}$ composition resulted in the crystal of the same composition in the process of heating at the temperature above $600^{\circ}C$. No phase transition was observed in the $CsLiB_{6}O_{10}$ crystal in the temperature range of $600^{\circ}C~800^{\circ}C$, and $CsLiB_{6}O_{10}$ crystal melted congruently at $850^{\circ}C$. When the melt of this composition was cooled at rates of $1~150^{\circ}C/hr$, glass state ingot was formed regardless of cooling rates. However, $CsLiB_{6}O_{10}$ crystals were formed directly from the melt at any cooling rate in the presence of $CsLiB_{6}O_{10}$ seed crystal in the melt. Transparent $CsLiB_{6}O_{10}$ single crystal was grown from the melt using the seed crystal at the growing rate of 0.06 mm/hr in the furnace having the temperature gradient of $100^{\circ}C/cm$. Analysis of the single crystal showed that the crystal belonged to the noncentrosymmetric tetragonal space group 142d and unit cell dimensions were $a=10.467(1)\;{\AA},\;c=8.972(1)\;{\AA}\;and\;V=983.0(2)\;{\AA}^3$. Optical absorption edge of the crystal was observed at 180mm and the crystal showed a good optical transparency (70% transmittance, sample thickness 0.5 mm) in the wide wavelength range above 300 nm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.32-36
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• 2008

In this study, $In_2O_3-ZnO$ thin films are prepared on quartz substrates by the pulsed laser deposition and their optical and electrical properties are investigated as the function of substrate temperatures ($200{\sim}600^{\circ}C$) at the fixed oxygen pressure of 200 mTorr. The XRD measurement shows that polycrystalline $In_2O_3-ZnO$ thin films are formed. In the XRD measurement, the intensity of the (400) $In_2O_3$ peak at $35.5^{\circ}$ decreases and that of the (222) $In_2O_3$ peak at $30.6^{\circ}$ increases with the increase substrate temperature up to $500^{\circ}C$. From the result of AFM measurement, the morphology of $In_2O_3-ZnO$ thin films are observed as round-type grains. The lowest surface roughness (6.15 nm) is obtained for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$. The optical transmittance of $In_2O_3-ZnO$ thin films are higher than 82% in the visible region. The maximum carrier concentration of $2.46{\times}10^{20}cm^{-3}$ and the minimum resistivity of $1.36{\times}10^{-3}{\Omega}cm$ are obtained also for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$.

• Journal of the Korean Society of Radiology
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• v.9 no.5
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• pp.295-300
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• 2015

There are various type of particle accelerators such as Kyoungju 100-MeV proton beam accelerator in Korea. And Korea plans to build large particle accelerator such as heavy ion accelerator and 4th generation light source facility. The accelerated high energy particles of these facility produce 2nd neutron after nuclear reaction with target materials. And then these 2nd neutron activate structural materials and surrounding environment. Accordingly, it is important to consider the activation and shielding calculation on design of facility for safety operation. In this study, we tried to calculate and compare the neutron flux from the interaction $^{la}150$ beam with target material(Cu) according to thickness of iron and concrete shielding material by MCNPX 2.7 with nuclear library JENDL/HE 07and la150. To verify the properties of nuclear library, we compared computational results with experimental value. These results can be used for dose evaluation technology in planning of the shielding of large particle accelerator.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.5
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• pp.487-493
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• 2012

We present interferometric modulators that reproduce RGB colors through the selective actuation of mechanically coupled mirror arrays having identical air gaps. The conventional transmittive interferometric modulators need additional backlights, which leads to high power consumption. The previous reflective interferometric modulators using ambient lights need three different air gaps for reproducing the three RGB colors, thus giving rise to process complexity. For process simplicity, we propose the use of reflective interferometric modulators that are capable of producing green, blue, red, and black colors with the aid of mechanically coupled mirrors with identical air gaps. In an experimental study, the present interferometric modulators reproduce green, blue, and red colors at the switching modes (000), (010), and (101). The spectrum peaks for the colors are measured at the wavelengths $511{\pm}5nm$, $478{\pm}3nm$, and $644{\pm}9nm$, respectively, with the bandwidths being $60{\pm}1nm$, $45{\pm}2nm$, and $105{\pm}4nm$, respectively; further, the maximum intensities of the colors are $77{\pm}5%$, $73{\pm}2%$, and $81{\pm}5%$, respectively. The black spectrum is measured below the intensity of $27{\pm}0%$. Thus, we experimentally demonstrate the color reproduction capability of interferometric modulators fabricated by using a simple process.

• Journal of Marine Bioscience and Biotechnology
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• v.9 no.1
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• pp.14-21
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• 2017

The purpose of this study was to inhibit biofouling on a selectively permeable membrane (SPM) and increase biomass productivity in marine photobioreactors (PBRs) for microalgal cultivation by chemical treatment. Surfaces of a SPM, composed of polyethylene terephthalate (PET), was sulfonated to decrease hydrophobicity through attaching negatively charged sulfonic groups. Reaction time of sulfonation was varied from 0 min to 60 min. As the reaction time increased, the water contact angle value of SPM surface was decreased from $75.5^{\circ}$ to $44.5^{\circ}$, indicating decrease of surface hydrophobicity. Furthermore, the water permeability of sulfonated SPM was increased from $5.42mL/m^2/s$ to $10.58mL/m^2/s$, which reflects higher nutrients transfer rates through the membranes, due to decreased hydrophobicity. When cultivating Tetraselmis sp. using 100-mL floating PBRs with sulfonated SPMs, biomass productivity was improved by 34% compared with the control group (non-reacted SPMs). In addition, scanning electron microscopic observation of SPMs used for cultivation clearly revealed lower degree of cell attachment on the sulfonated SPMs. These results suggest that sulfornation of a PET SPM could improve microalgal biomass productivity by increasing nutrients transfer rates and inhibiting biofouling by algal cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.138-143
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• 2002

In this study, ZnS: Cu nano-crystals are synthesized by solution synthesis technique (SST). The structural properties such as crystal structure and particle morphology, and the optical properties such as light absorption/transmittance, energy bandgap, and photoluminescence (PL) excitation/emission are investigated. In an attempt to realize the Cu-doping easiness, the synthesis temperature (~$80^{\circ}C$) is applied to the synthesis bath, and the thiourea is used as sulfur precursor, unlike other general chemical synthesis route. Both undoped ZnS and ZnS : Cu nano-crystals have the cubic crystal structure and have the spherical particle shape. The position of light absorption edge is ~305 nm, indicating the occurrence of quantum size effect. The PL emission intensity and line-width are maximum and minimum, respectively, for Cu-doping concentration 0.03M. In particular, the dependence of PL intensity and line-width on the Cu-doping concentration for ZnS : Cu nano-crystals synthesized by SST is reported for the first time in this study. Experimental results of the absorption edge and the PL excitation show that the main emission peak of ZnS : Cu nano-crystals (~510 nm) in this study is due to the radiative recombination center in the energy bandgap induced by Cu dopant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.127-133
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• 2012

To achieve low-cost and high-efficiency of thin-film solar cells applications, the sol-gel method that can be coated on a large area substrate, obtain homogeneous thin films of high purity was used. We studied structural and optical characteristics versus annealing temperature of $Cu_2ZnSnS_4$ which has kesterite structure by substitution low-cost sulfur (S) instead of high-cost selenium (Se). By analyzing XRD patterns, main peak was observed at $2{\theta}=28.5^{\circ}$ when Zn/Sn ratio is 0.8/1.2. And when we observed kesterite structure which has orientation of (112) direction, the more annealing temperature increase the bigger strength of (112) direction is. $Cu_2ZnSnS_4$ thin film showed characteristics of kesterite structure at $550^{\circ}C$. And when we calculated lattice constant, a = 5.5047 and $c=11.014{\AA}$ as same JCPDS (Joint Committee on Powder Standards) data measured. We measured optical transmittance to analyze optical characteristics. Optical transmittance was lower than 65 % at visible ray (${\lambda}=380{\sim}770nm$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.122-126
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.79-87
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• 1997

Anti-reflective and anti-static double layered films were prepared on the VDT panel by sol-gel spin-coating method. Their electrical, opticla, and mechanical properties were investigated. The outer SiO2 film with low re-fractive index was coated over the inner ATO(Antimony-doped Tin Oxide)-SiO2 film which was prepared by mixing ATO sol with SiO2 at molar ratio of 68:32 to satisfy the interference condition of double layers. The heat treatment was conducted at 45$0^{\circ}C$ for 30 min where residual organics were completely removed. The sheet resistance of ATO single layer showed the minimum value of 6$\times$107$\Omega$/$\square$ at 3 mol% addition of Sb and that of SiO2/ATO-SiO2 increased slightly with increasing SiO2 mol% up to 30 mol%, and then increased steeply to the value of 3$\times$108$\Omega$/$\square$ at 32 mol%. The reflectance of double layered films was about 0.64% at the wavelength of 550nm and the transmittance increased about 3.20%. The hardness of double layered films was almost the same as that of uncoated VDT panel, 471.4kg.f/mm2.