• Title/Summary/Keyword: 텔루륨

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Growth mechanism of anodic oxide for MCT passivation (MCT 표면보호를 위한 양극산화막 성장)

  • 정진원;왕진석
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.352-356
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    • 1995
  • Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

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네모파 전압전류법에 의한 텔루륨(Ⅳ) 정량

  • Seo, Mu Yeol;Seo, Mu Yeol;Eom, Tae Yun;Choe, In Gyu
    • Journal of the Korean Chemical Society
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    • v.38 no.7
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    • pp.496-501
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    • 1994
  • Square-wave voltammetric behavior for tellurium(Ⅳ) was studied in hydrochloric acid medium using a hanging mercury drop electrode. The reduction of tellurium(Ⅳ) was found to be irreversible and catalized by acid. Analytical conditions for the determination of tellurium(Ⅳ) and effects of diverse ions were also investigated. The detection limit of tellurium(Ⅳ) was $4.2\;ppb (3.3{\tiems}10^{-8}M)$. The amount of tellurium(Ⅳ) on the electrode surface was ${\Gamma}=(7.2{\pm}1.4){\times}10^{-11}\;mol\;cm^{-2}$.

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The Characteristic of Te Recovery in Gold Concentrate Using Electrolysis (전기분해법을 이용한 금정광내 Te 회수 특성)

  • Kim, Bong-Ju;Cho, Kang-Hee;Jo, Ji-Yu;Choi, Nag-Choul;Park, Cheon-Young
    • Economic and Environmental Geology
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    • v.47 no.6
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    • pp.645-655
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    • 2014
  • In order to obtain pure metallic Te from gold concentrate, roasting treatment, hypochlorite leaching, Fe removal and electrolysis experiments were carried out. The contents of Au, Ag and Te from the concentrate sample and roasted sample were much more soluble in the hypochlorite solution than in aqua regia digestion, whereas the metals Pb, Zn, Fe and Cu were easier to leach with the aqua regia than the hypochlorite. With the addition of NaOH in the hypochlorite leaching solution prior to electrolysis, the Fe removal rate achieved was only 96% in the concentrate sample, while it reached 98% in the roasted sample. The results of electrolysis for 240 min, 98% of the metallic copper was recovered from the concentrate sample, while 99% was obtained from the roasted sample due to the removal of S by roasting. The amount of anode slime was also greater in the electrolytic solution with the roasted sample than with the concentrate sample. The results on the anode slime after the magnetic separation process showed the amount of metallic pure native tellurium recovered was greater in the roasted sample than in the concentrate sample.

Performance of the heat flux sensor using thermoelectric semiconductor material (半導體 熱電材料를 利용한 熱流束 測定 센서의 性能)

  • 황동원;정평석;주해호
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.12 no.3
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    • pp.622-629
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    • 1988
  • In order to improve the sensitivity of the wafer type heat flux sensor, some heat flux sensors were manufactured and examined by using thermoelectric semiconductor material (bismuth telluride) whose Seebck coefficient is much larger than those of metallic thermocouple materials. Because the thermoelectric element cannot be bended or welded, a peculiar sensor structure and manufacturing process were designed. As a result, it is revealed that the characteristic sensitivity of the manufactured sensor is about 10 times larger than that of marketed sensor even though there are some troubles in stiffness for reciprocal use. If we make this kind of sensors smaller and thinner, it will be a useful method to measure the local heat flux from the surface of complex configuration.

Effect of O2/Ar Gas Ratios on the Characteristics of Amorphous Tellurium Oxide Thin Films (비정질 텔루륨 산화물 박막 특성에 미치는 O2/Ar 가스비율의 영향)

  • Kong, Heon;Jung, Gun-Hong;Yeo, Jong-Bin;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.5
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    • pp.294-300
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    • 2017
  • $TeO_x$ thin films were deposited at various $O_2$/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from $TeO_2$ and Te targets. X-ray diffraction (XRD) results revealed that the $TeO_x$ thin films were amorphous. The structure and chemical composition of the $TeO_x$ thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the $TeO_x$ thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the $O_2$/Ar gas-flow ratios, the atomic composition ratio of $TeO_x$ thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing $O_2$/Ar gas-flow ratio, the refractive index of the $TeO_x$ thin films decreased and the optical bandgap of the films increased.