• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.62.2-62.2
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• 2010

박막 실리콘 태양 전지는 저가격화 및 대량생산, 대면적화에 유리하다는 장점을 가지고 있다. 단점으로 지적되는 낮은 효율을 극복하기 위해 광흡수층의 밴드갭이 서로 다른 두 개 이상의 박막을 적층하여, 넓은 파장 대역의 빛을 효과적으로 흡수함으로써 광변환 효율을 올리기 위한 많은 연구가 이루어지고 있다. 서로 다른 밴드갭의 광흡수층을 가진 p-i-n 구조를 다중 적층하여 고효율의 태양 전지를 제작하기 위해서는 n-도핑층과, p-도핑층 간에 전자와 정공이 빠르게 재결합할 수 있는 터널 접합(Tunnel Recombination Junction)의 형성이 필수적이며, 이때 광손실이 최소화되도록 해야한다. 만약 터널 접합이 적절하게 형성되지 않으면 결합되지 않은 전자와 정공이 도핑층 사이에 쌓이게 되고, 도핑층 사이의 저항 증가로 태양 전지의 광변환 효율은 크게 하락한다. 이번 연구에서는 터널 접합이 잘 이루어지게 하기 위한 n-도핑층 및 p-도핑층 박막의 특성과, 터널 접합의 특성에 따른 적층형 태양 전지의 광효율 변화를 확인하였다. 광흡수층 및 도핑층은 TCO($SnO_2:F$, Asahi) 유리 기판 위에 PECVD를 사용하여 p-i-n 구조로 RF Power 조건에서 증착되었고, ${\mu}c$-Si 광흡수층의 경우에는 VHF Power 조건에서 증착되었다. 광흡수층이 a-Si/${\mu}c$-Si의 구조를 가지는 이중 접합 태양 전지에서 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층 사이의 터널 접합 실험 결과 n-도핑층 및 p-도핑층의 결정화도와 도핑 농도를 조절하여 터널 접합의 저항을 최소화했고, 터널 접합 특성이 이중 접합 셀의 광효율 특성과 유사한 경향을 보임을 확인하였다. 광흡수층이 a-Si/a-SiGe/${\mu}c$-Si의 구조를 가지는 삼중 접합 태양 전지 실험의 경우 a-Si과 a-SiGe 광흡수층 사이에 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층/a-SiC p-도핑층의 구조를 적용하여 터널 접합을 형성하였으며, ${\mu}c$-Si p-도핑층의 두께 및 박막 특성을 개선하여 광손실이 최소화된 터널 접합을 구현하였고, 삼중 접합 태양 전지에 적용되었다.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.27-33
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• 1998

We have investigated tunneling magnetoresistance (TMR) properties of Fe/$Al_2O_3$/Co magnetic trilayer junctions sputtered on single-crystal Si (001) substrates. $Al_2O_3$ layers with thicknesses of 50~200 $\AA$ were deposited directly on the bottom ferromagnetic layer by a reactive rf sputtering. For comparsion, we prepared Pt/$Al_2O_3$/Pt tunnel junctions whose current-voltage (I-V) characteristics measured at 300 K indicated that reactively sputtered $Al_2O_3$ is a particularly good material for thin insulating barriers and allows us to form pinhole-free tunnel barriers. The magnetic tunnel junctions exhibit changes of tunnel resistance of about 0.1% at 300 K with an applied magnetic field and it was found that most junctions with Co as a top electrode have rather good I-V and TMR characteristics compared to those with Fe as a electrode. These results were discussed in relation to interfacial on the basis of those for Pt/$Al_2O_3$/Pt.

• Journal of the Korea institute for structural maintenance and inspection
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• v.26 no.5
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• pp.30-42
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• 2022

Due to the increase in construction of tunnels, the burdens of maintenance works for tunnel structures have been increasing in Korea. In addition, the increase of traffic volume and aging of materials also threatens the safety of tunnel facilities, therefore, maintenance costs are expected to increase significantly in the future. Accordingly, automated condition assessment technologies like image-based tunnel scanning system for inspection and diagnosis of tunnel facilities have been proposed. For image-based tunnel scanning system, it is key to create a planar image through stitching of multiple images captured by tunnel scanning system. In this study, performance of feature-based stitching algorithms suitable for stitching tunnel scanning images was evaluated. In order to find a suitable algorithm SIFT, ORB, and BRISK are compared. The performance of the proposed algorithm was determined by the number of feature extraction, calculation speed, accuracy of feature matching, and image stitching result. As for stitching performance, SIFT algorithm was the best in all parts of tunnel image. ORB and BRISK also showed satisfactory performance and short calculation time. SIFT can be used to generate precise planar images. ORB and BRISK also showed satisfactory stitching results, confirming the possibility of being used when real-time stitching is required.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.136-139
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• 2006

The tunneling magnetoresistance (TMR) ratios of magnetic tunnel junctions (MTJs), in general, decrease abruptly above 250$^{\circ}C$ due to Mn interdiffusion from an antiferromagnet IrMn layer to a ferromagnetic CoFe and/or a tunnel barrier. To improve thermal stability, we prepared MTJs with nano-oxide layers. Using a MTJ structure consisting of underlayer CoNbZr 4/bufferlayer CoFe 10/antiferromaget IrMn 7.5/pinned layer CoFe 3/tunnel barrier AlO/freelayer CoFe 3/capping CoNbZr 2 (nm), we placed a nano-oxide layer (NOL) into the underlayer or bufferlayer. Then, the thermal, structural and magneto-electric properties were measured. The TMR ratio, surface flatness, and thermal stability of the MTJs with NOLs were promoted.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.271-275
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• 2006

We investigated the magnetoresistance of perpendicularly magnetized magnetic tunnel junction composed of Co/Pd multilayers. The magnetoresistance was maximized with Co electrodes of about 5 nm thickness, which evidenced the important role of the interface in tunneling process. Both the change in perpendicular magnetic anisotropy and improvement of junction resistance were observed with changing Co sublayers, while the spin scattering became dominant with increasing Pd sublayers.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.202-210
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• 2001

Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/AlOx/CoFe/NiFe/Al with in-situ naturally oxidized Al barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10$^{-9}$ Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R$_{j}$ A) are 16-17% and 50-60 $\Omega$${\mu}{\textrm}{m}$$^2$, respectively. The values of TMR and (R$_{j}$ A) with field annealing were slightly increased. The TMR and (R$_{j}$ A) dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.162-165
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• 2007

We investigated the effects of the capping layer materials on the crystallization of the amorphous top-CoFeB (t-CoFeB) electrode and the magnetoresistance properties of the magnetic tunnel junctions (MTJs). When the hcp(002)-textured Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe(110). The CoFe(110)/Ru(002) texture relation can be minimized the lattice mismatch down to 5.6%. However, when the fine polycrystalline but almost amorphous TiAl or amorphous ZrAl were used, the amorphous t-CoFeB was crystallized to bcc-CoFe(002). When the amorphous capping materials were used, the evolution of the t-CoFeB texture was affected mainly by the MgO(001) texture. Consequently, the M ratios of the annealed MTJ capped with the ZrAl and TiAl (72.7 and 71.8%) are relatively higher than that of the MTJ with Ru capping layer (46.7%). In conclusions, the texture evolution of the amorphous t-CoFeB during the post deposition annealing could be controlled by the crystallinity of the adjacent capping layer and in turn, it affects the TMR ratio of MTJs.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.231-235
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• 2005

We studied the microstructural evolution of ZrTM-Al (TM=Nb and Ti) alloy films, MR and electrical properties of the MTJ with $ZrTM-AlO_x$ barrier as a function of Zr/TM ratio. We observed that the ternary-oxide barrier reduced the TMR ratio due mainly to the structural defects such as the surface roughness. The change in TMR ratio and $V_h$ with Zr/TM ratio exactly corresponds to the systematic changes in the microstructural variation. Although the MTJ with ternary oxide reduced the TMR and the electrical stabilities, the junction resistances decreased as the Ti and Nb concentration increased due to the band-gap reduction caused by the formation of extra bands

• Journal of Korean Tunnelling and Underground Space Association
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• v.21 no.5
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• pp.675-687
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• 2019

In recent years, the needs for double deck-tunnels have increased in large cities due to the increase in traffic volume and high land compensation costs. In Korea, a network type tunnel which is smaller than general road tunnels and crosses another tunnel underground is planned. In the shield tunnel joints between the existing shield tunnel and the box-type enlargement section, a partial steel-concrete joint is proposed where the bending moment is large instead of the existing full-section steel joint. In order to analysis the enlargement section of the shield tunnel diverged section to reflect the three-dimensional effect, the two-dimensional analysis model is considered to consider the column effect and the stiffness effect of the longitudinal member. A two-dimensional analysis method is proposed to reflect the stiffness of the longitudinal member and the column effect of the longitudinal point by considering the rigidity of the longitudinal member as the elastic spring point of the connecting part in the lateral model. As a result of the analysis of the model using the longitudinal member, it was considered that the structural safety of the partial steel-concrete joint can be secured by reducing the bending moment of the joint and the box member by introducing the longitudinal member having the stiffness equal to or greater than a certain value.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.