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http://dx.doi.org/10.4283/JKMS.2005.15.4.231

Magnetoresistance and Structural Properties of the Magnetic Tunnel Junction with Ternary Oxide Barrier  

Park, Sung-Min (Division of Materials Science and Engineering, Korea University)
Lee, Seong-Rae (Division of Materials Science and Engineering, Korea University)
Publication Information
Journal of the Korean Magnetics Society / v.15, no.4, 2005 , pp. 231-235 More about this Journal
Abstract
We studied the microstructural evolution of ZrTM-Al (TM=Nb and Ti) alloy films, MR and electrical properties of the MTJ with $ZrTM-AlO_x$ barrier as a function of Zr/TM ratio. We observed that the ternary-oxide barrier reduced the TMR ratio due mainly to the structural defects such as the surface roughness. The change in TMR ratio and $V_h$ with Zr/TM ratio exactly corresponds to the systematic changes in the microstructural variation. Although the MTJ with ternary oxide reduced the TMR and the electrical stabilities, the junction resistances decreased as the Ti and Nb concentration increased due to the band-gap reduction caused by the formation of extra bands
Keywords
magnetic tunnel junction; tunneling magnetoresistance; ternary oxide barrier;
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