• Title/Summary/Keyword: 탄성스프링

Search Result 191, Processing Time 0.014 seconds

Nanomechanical Properties of Lithiated Silicon Nanowires Probed with Atomic Force Microscopy (원자힘 현미경으로 측정된 리튬화 실리콘 나노선의 나노기계적 성질)

  • Lee, Hyun-Soo;Shin, Weon-Ho;Kwon, Sang-Ku;Choi, Jang-Wook;Park, Jeong-Young
    • Journal of the Korean Vacuum Society
    • /
    • v.20 no.6
    • /
    • pp.395-402
    • /
    • 2011
  • The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value ($0.65{\pm}0.05$ nm) for lithiated silicon nanowire and a higher value ($1.72{\pm}0.16$ nm) for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value (~15 nN) than that of the Si nanowire substrate (~60 nN) by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The elastic local spring constants obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively smaller value (16.98 N/m) than lithiated silicon nanowire (66.30 N/m) due to the elastically soft amorphous structures. The frictional forces of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.