• Journal of the Computational Structural Engineering Institute of Korea
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• v.32 no.4
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• pp.241-247
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• 2019

A band gap refers to a certain frequency range where the propagation of mechanical waves is prohibited. This work focuses on engineering three-dimensional Kelvin lattices having external band gaps at low audible frequency ranges using a gradient-based design optimization method. Elastic wave propagation in an infinite periodic lattice is investigated by employing the Bloch theorem. We model the ligaments using a shear-deformable beam model obtained by consistent linearization in a geometrically exact beam theory. For a given lattice topology, we enlarge band gap sizes by controlling the configuration of the beam neutral axis and cross-section thickness that are smoothly parameterized by B-spline basis functions within the isogeometric analysis framework.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.