• The Journal of the Acoustical Society of Korea
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• v.20 no.3
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• pp.83-90
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• 2001

Conventional SAW duplexer filters employ a 1/4 wavelength transmission line, which causes difficulty in fabrication of the strip line on the package. Its manufacturing process is also complicated, because it needs integrating process of the separate transmitting filter, receiving filter and isolation circuits. This paper concerns development of a new structure of the duplexer filter that has all the transmitting filter, the receiving filter and the isolation circuit as a one chip device. For composition of the duplexer, we design the component SAW ladder filters and the isolation network consisting of lumped inductor and capacitor elements. Performance of the whole duplexer is optimized by the nonlinear multivariable minimization of a proper target function, and the result is compared with that of commercial filters.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.2
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• pp.135-140
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• 2008

In this paper, the spiral antenna with the center frequencies of 315MHz, 433MHz, and 447MHz for RKE system of a vehicle is designed on PCB. The antenna is microstrip line-fed, and applied PIFA concept near the feeding part to easily tune center frequency and input impedance. The PIFA-type spiral antenna with the size of $30mm{\times}20mm$ is designed on printed PCB by considering the effect of circuits and components on PCB, ECU case and vehicle body. Also chip inductor inserted dual-band spiral antenna of 315MHz and 447MHz is designed. We found that the antenna designed on PCB satisfied the antenna specifications through measurement and field test.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1122-1128
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• 2008

A novel tunable bandstop filter was proposed. It is composed of a right-handed transmission line, which has lowpass characteristics, and a left-handed transmission line which has highpass characteristics. Dispersion relations for the unit cells of RHTL and LHTL were derived by the method of ABCD parameter analysis. Varactor diodes and chip inductors were used to make the unit cells of RHTL and LHTL. A tunable bandstop filter was designed and fabricated by the parallel connection of RHTL and LHTL. The measured results of the proposed tunable bandstop filter are agreed well with the simulated results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.840-846
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• 2000

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al$_2$O$_3$core material were investigated. The size of the chip inductors fabricated in this work were 15$\times$10$\times$0.7㎣, 2.1$\times$1.5$\times$10㎣, and 2.4$\times$2.0$\times$1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.109-113
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• 2002

본 연구에서는 공침법에 의한 초미세분말을 이용하여 제조된 (NiCuZn)-ferrite와 건식법을 이용하여 제조된 (NiCuZn)-ferrite의 저온소결 특성 및 전자기적 특성을 상호 비교 분석하였다. 조성은 (N $i_{0.4-x}$C $u_{x}$Z $n_{0.6}$)$_{1+w}$(F $e_2$ $O_4$/)$_{1-w}$에서 x의 값을 0.2, w의 값은 0.03으로 고정하였고, 소결은 공침법으로 합성된 분말의 경우 초기열처리과정을 거쳐 최종적으로 90$0^{\circ}C$에서, 건식법의 경우 11$50^{\circ}C$의 온도에서 진행하였다. 그 결과, 공침법으로 제조된 (NiCuZn)-ferrite는 건식법으로 제조된 (NiCuZn)-ferrite보다 20$0^{\circ}C$이상 낮은 소결온도에서 높은 소결밀도 값을 가졌으며, 품질계수 등 칩 인덕터에서 중요한 요소인 전자기적 특성이 우수하게 나타났다. 또한, 공침법으로 합성된 페라이트는 분말의 초기열처리온도에 따라 최종소결 특성이 크게 변하였다. 그밖에 공침법과 건식법으로 합성한 (NiCuZn)-ferrite의 결정성, 미세구조들을 XRD, SEM, TEM을 이용하여 비교 고찰하였다.하였다.다.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.765-767
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• 2014

본 논문에서는 단거리 레이더용 차량 추돌 방지 24-GHz CMOS 고주파 전력 증폭기 (RF Power Amplifier)를 제안한다. 이러한 회로는 class-A 모드 증폭기로서 단간 (inter-stages) 공액 정합 (conjugate matching) 회로를 가진 공통-소스 단으로 구성되어 있다. 칩 면적을 줄이기 위해 실제 인덕터 대신 전송선(Transmission Line)을 이용하였다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성 신호/고주파 CMOS 공정 ($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 설계한 CMOS 고주파 전력 증폭기는 최근 발표된 연구결과에 비해 약 22dB의 높은 전력이득 및 7.1%의 높은 PAE 특성을 보였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• The Journal of the Acoustical Society of Korea
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• v.16 no.4
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• pp.76-84
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• 1997

In this paper, one of the core components of a mobile communication system, VCO(Voltage Controlled Oscillator) IC is designed. The VCO IC was designed, have realized as LC turned oscillator using varicap. LC sinusoidal tuned oscillator generally requires external inductors and thus remainding circuit is implemneted in monolithic IC. The circuit is fabricated using an 15 mask IC process and has a die size of 1150um${\times}$780um. The tests showed that VCO was operated at frequencies in the regions between 880MHz-915MHz in the control voltage range of 1V to 3V at 5V supply voltage and as the power supply was varied from 4.5V to 5.5V, the frequency varied 425KHz/V. The VCO IC has frequency shift of 1.97MHz/T, carrier level of -7dBm and power consumption of 16.7mA. Also it has phase noise of -80dBc/Hz, offset at 50KHz and harmonic response of center frequency is -41dBm. For the future development of the transceiver 1 chip, the previously mentioned external devices need to be incorporated into Si MMIC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.