• Title/Summary/Keyword: 초고주파 대역

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Experimental Extraction of Effective Permittivity on the Structures of Coplanar Waveguides (코프래너 도파로 구조에서 S-파라메터를 이용한 유효유전상수 실험적 도출)

  • 지용
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.15-20
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    • 2004
  • This paper proposed a very simple method of extracting an effective permittivity from the data of scattering parameters measured on the transmission line of coplanar waveguides in the frequency range of microwave or millimeter waves. This is an extracting method of an effective permittivity $\varepsilon$$_{eff}$ in the case of $\beta$$\ell$ =n$\pi$ (n=integer), where the value of S$_{11}$ changes abruptly following the operating frequency. The experimental value of the effective permittivity $\varepsilon$$_{eff}$ on a dielectric substrate of Rogers 4003$^{TM}$ material of $\varepsilon$$_{r}$ =3.38 showed the value of 2.042, which differs in the error of -3.4% to 8% from those calculated from the previously reported formulae. This result showed that the measurement method was very simple, as well as applied directly to the fabricated circuit patterns, even though the circuit patterns might be complicated or on the substrate of different dielectric materials.s.als.

Optimization of Coaxial to Microstrip Transition (동축커넥터와 마이크로스트립의 전이구조 최적화)

  • 강경일;김진양;이해영
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.2
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    • pp.70-77
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    • 2003
  • In this paper, analysis and measurement on coaxial connecter designed for packaging of microwave and micro strip transition structure are carried out. Even though researches on optimization of various kinds of transition structures have been conducted actively; however, the range of the application was very limited since they have been focused mainly on improvement of specific transmission line. Therefore, in this paper, we tried to analyze three kinds of substrates of which dielectric constants are 2,5,10 and are commercially used nowadays. Besides, we have confirmed reliability of FEM analysis, extracted equivalent circuit of transition area, found out factors determining extracted physical values, and made proof of electromagnetic variations for optimum characteristics. In addition, transition structure showing optimized characteristics on the basis of dielectric and microstrip structure was proposed. We reckon that the result of this research will apply with effect to transition design in microwave packaging development.

A $\pi$-type Variable Attenuator with Low Phase Shift (저위상 변화 특성을 갖는 $\pi$-형 가변 감쇠기)

  • Park, Ung-Hee;Ahn, Gil-Cho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.10
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    • pp.2066-2070
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    • 2009
  • A voltage controlled attenuator using a PIN diode and two resistors of the $\pi$-type fixed attenuator is described in this paper. The proposed variable attenuator operating for a fixed attenuation range has a good input VSWR and a low intermodulation signal. For the low phase shift, a PIN diode is connected with open stub for the purpose of phase compensation. The stub for phase compensation is calculated by the Deloach method and the related circuit theory. This attenuator is easily fabricated on the microstrip and can be normally used in fine control circuits within small attenuation range. The fabricated attenuator for 2110~2170 MHz frequency band has about 4 dB of an attenuation range, $2^{\circ}$ of phase variance, and -20 dB of S11 according to the input voltage from 0 to 2.7 V.

Study on The Electrical Characteristic Extraction of PI(Poly Imide) Substrate using Capacitor Method (캐패시터를 이용한 PI (Poly Imide) 기판의 전기적 특성 추출에 관한 연구)

  • Lee, Gwang-Hoon;Yoo, Chan-Sei;Lee, Woo-Sung;Yang, Ho-Min;Jung, Han-Ju;Kim, Hong-Sam;Lee, Bong-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.210-210
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    • 2007
  • RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 매우 중요하다. 왜냐하면 초고주파로 갈수록 기판의 전기적인 특성이 circuit에 많은 영향을 미치고 이러한 영향을 고려한 circuit를 설계해야 원하는 결과를 얻을 수 있기 때문이다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 캐패시터를 이용해 정확하게 측정하고자 했다. 캐패시터의 conductor material은 Cu를 사용하였고 PI 기판의 투께는 25um 를 이용하였다. PI 기판의 유효 유전율은 캐패시터 측정에 의한 data률 EM simulation tool 을 통해 분석한 후 간단한 수식에 의해 구했다. 또한 PI 기판의 loss tangent 값을 구하기 위해 캐패시터의 dissipation factor를 분석하였다. 캐패시터의 dissipation factor는 dielectric loss, AC 저항에 의한 loss, DC 저항에 의한 loss를 포함한다, DC 저항에 의한 loss는 dissipation factor에 차지하는 비율이 낮기 때문에 생략이 가능하다. 하지만 AC 저항에 의한 loss는 주파수에 비례하여 값이 커지게 된다. 따라서 주파수가 올라 갈수록 dissipation factor도 상승하게 되는데 주파수의 전 대역에서 AC 저항에 의한 loss를 보정해주면 dielectric loss를 얻을 수 있다. 추출된 dielectric loss를 통해 PI 기판의 loss tangent 값을 구하였다. 캐패시터를 이용한 PI 기판의 전기적 특성 추출은 간단한 구조를 통해 얻을 수 있기 때문에 다른 재료의 기판의 전기적 특성을 추출하는데도 이용이 용이하다.

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Wire Harness Design of Compact Tracking Radar (소형 추적 레이다 와이어 하네스 설계)

  • Kim, Hong-Rak;Kim, Youn-Jin;Woo, Seon-Keol;An, Se-Hwan
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.20 no.4
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    • pp.35-41
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    • 2020
  • The small tracking radar is a very important component of the wire harness design because the components are organically connected. In addition, the cable connected to the signal processing unit and the servo unit having a large number of digital signals should be prepared to prevent the CPU of the signal processing unit from malfunctioning due to electromagnetic noise. Cables for signal transmission in the ◯◯ GHz band must reflect the design of temperature, vibration, and shock. To design a wire harness in a small space, the size of the connector must be minimized. The issues to be considered are described and the design plan is presented.

Design and Implementation of Local Oscillator for X-Band Radar (X-대역 레이더용 국부 발진기의 설계 및 구현)

  • Kim, Gi-Rae
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.11
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    • pp.1215-1220
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    • 2014
  • In this paper, a local oscillator for X-band radar system is designed and fabricated with GaAs MESFET. GaAs MESFET is good for microwave oscillators because of very low noise figure and high electron mobility. Oscillator design methods in this paper are used the characteristic of negative resistance of active component and impedance matching technique without RF resonator. So, oscillator is designed in compact size because space of RF resonator is reduced and can be applied MMIC technique. Designed oscillator has characteristic of the output power of 2.30 dBm and center frequency of 10.545GHz.

A Study on Efficiency Improvement of X-Band Power Amplifier Using Harmonic Control Circuit (고조파 제어 회로를 이용한 X-대역 전력 증폭기의 효율 개선에 관한 연구)

  • Kim, Hyoung-Jong;Choi, Jin-Joo;Kim, Dong-Yoon;Na, Hyung-Gi
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.9
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    • pp.987-994
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    • 2010
  • In this paper, a simple and effective active load-pull method is proposed, and the method to improve the efficiency of X-band power amplifier using harmonic control circuit is presented. The proposed active load-pull system mainly consists of directional coupler, phase shifter, short circuit, and power amplifier, and allows a user to access reflection coefficients near the edge of the Smith chart($\Gamma$=1) easily. The device used in this paper is Mitsubishi's GaAs FET MGF1801, and the operating frequency of the power amplifier is 9 GHz, The amplifier had output power of 21.65 dBm and drain efficiency of 24.9 % at class-A, and had output power of 21.46 dBm and drain efficiency of 53.3 % at class-AB. Harmonic control circuit is designed only second and third harmonic components because of the bandwidth limitation of the microwave components. The drain efficiency is improved as much as 6.4 % compared with class-AB power amplifier.

Design of a Distributed Mixer Using Dual-Gate MESFET's (Dual-Gate MESFET를 이용한 분포형 주파수 혼합기의 설계)

  • Oh, Yang-Hyun;An, Jeong-Sig;Kim, Han-Suk;Lee, Jong-Arc
    • Journal of IKEEE
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    • v.2 no.1 s.2
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    • pp.15-23
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    • 1998
  • In this paper, distributed mixer is studied at microwave frequency. The circuit of distributed mixer composed of gate 1,2, drain transmission lines, matching circuits in input and output terminal, DGFET's. For impedance matching of input and output port at higher frequency, image impedance concept is introduced. In distributed mixer, a DGFET's impedances are absorbed by artificial transmission line, this type of mixer can get a very broadband characteristics compared to that of current systems. A RF/LO signal is applied to each gate input port, and are excited the drain transmission line through transcondutance of the DGFET's. The output signals from each drain port of DGFET's added in same phases. We designed and frabricated the distributed mixer, and a conversion gain, noise figure, bandwidth, LO/RF isolation of the mixer are shown through computer simulation and experimentation.

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Design of A Miniaturized Low Pass Filter Using Common Defected Ground Structure (공통 결함접지구조를 이용한 소형화된 저역통과여파기의 설계)

  • Lee, Jun;Lee, Jae-Hoon;Lim, Jong-Sik;Ahn, Dal
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.5
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    • pp.2298-2304
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    • 2011
  • This paper describes and presents the design of a miniaturized low pass filter (LPF) for microwave frequency region using a common defected ground structure (CDGS). In this study a half-sized LPF is obtained using CDGS, while the previous LPFs with the conventional DGS showed a mild size-reduction. The common DGS (CDGS) is realized on the common ground plane of two microstrip lines, i. e double-sided microstrip lines, which exist back-to-back to each other. In order to show the validity of the proposed design, an example of LPF using CDGS and double-sided microstrip lines is designed, fabricated and measured using the dielectric substrate with the dielectric constant of 2.2 and with the thickness of 31mils. The size of the designed LPF using CDGS is only 52.6% compared to that of the previous LPF with the conventional DGS. In addition, it is shown that the performances of the proposed LPF are well preserved after the size-reduction with the measured S11 and S21 of -22dB, min and -0.19dB, max, respectively.

A Reconfigurable Active Array Antenna System with Reconfigurable Power Amplifiers Based on MEMS Switches (MEMS 스위치 기반 재구성 고출력 증폭기를 갖는 재구성 능동 배열 안테나 시스템)

  • Myoung, Seong-Sik;Eom, Soon-Young;Jeon, Soon-Ik;Yook, Jong-Gwan;Wu, Terence;Lim, Kyu-Tae;Laskar, Joy
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.4
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    • pp.381-391
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    • 2010
  • In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.