• Journal of Advanced Navigation Technology
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• v.19 no.4
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• pp.323-329
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• 2015

The compensation characteristics of the distorted WDM channels compensated for by dispersion management (DM) and optical phase conjugation in the long-haul ($50\;fiber\;spans{\times}80km$) transmission link with the randomly distributed single mode fiber (SMF) length and residual dispersion per spans (RDPS) for implementing of the flexible link configuration are investigated. It is confirmed that the compensation effect in the link with the randomly distributed SMF length and RDPS is similar with that in the link with the uniform distribution, when the launch power of WDM channels are restricted within 0 dBm. This result means that the proposed link configuration is useful for designing and deploying the long-haul WDM transmission link.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.14-21
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• 1998

In the conventional GaAs MESFET circuit simulation, the DC and transient simulation results are often failed due to the discontinuities of the first and second order derivatives arising from the use of separate models in linear, saturation, and transition regions. In this paper, we propose a unified drain current-voltage model by using a unified channel length modulation effect that is derived by extending the channel length modulation effect in the saturation region to the linear region. Calculated results from the proposed drain current-voltage model agree well with the results of Shur model. Also, we propose a unified capacitance model for linear, transition, and saturation regions by using a unified channel length modulation effect. Its results from the proposed capacitance model agree well with 2-D device simulation results. Thus, the proposed models are expected to be useful in circuit simulations.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2001.06a
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• pp.33-36
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• 2001

In MC-CDMA systems effects of delay spread of the channel are reduced with increased symbol duration by simultaneously transmitting data symbols on the parallel subcarriers. However, the increased symbol duration causes the system to be more vulnerable to time selective fading. In this paper, we investigate the effects of time selective fading characteristics of the mobile channel from the viewpoint of desired signal power to inter-carrier interference power ratio at the combiner output of the MC-CDMA receiver.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.450-453
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• 2014

쇼트키 장벽 모스펫(Schottky barrier MOSFETs : SB-MOSFETs)은 SB높이(${\Phi}_B$)에 매우 민감하다. 그래서 ${\Phi}_B$를 줄이는 공정 방법에 대한 연구가 활발히 진행 중이다. 이러한 ${\Phi}_B$를 측정할 때, SB-MOSFETs에서가 아닌 SB 다이오드에서 측정이 이뤄지고 있다. 본 논문에서는 ${\Phi}_B$를 SB-MOSFETs에서 측정 할 수 있는 방법을 제안하고 전산모사를 통하여 채널의 길이와 두께, Overlap / Underlap 구조, 온도 등에 대한 의존성을 살펴 보았다. 그 결과 채널의 길이와 두께, Overlap / Underlap 구조에 따른 의존성은 없는 것으로 확인되었다. 하지만 20nm 이하의 채널의 소자에 대해서는 소스/드레인간 터널링 전류로 인해 정확한 ${\Phi}_B$ 측정이 불가능하였다. 그리고 저온에서 측정할 때 정확도가 높아짐을 확인하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.8B
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• pp.1445-1452
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• 2000

In general, the communication channel can be modeled as inter-symbol interference(ISI) and additive white gaussian noise channel. Viterbi algorithm is optimum detector for transmitted data at transmitter, but it needs large computational complexity. For the sake of this problem, adaptive equalizers are employed for channel equalization which is not attractive for mixed phase channel. In this paper, we propose the effective new channel equalizer for mixed phase channel and show the better performance than previous equalizers.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.9A
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• pp.755-761
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• 2005

In this paper, we proposed a channel estimation method by impulse signal train in OFDM. In order to estimate the channel response, 4 impulse signals are generated and transmitted during one OFDM (Orthogonal Frequency Division Multiplexing) symbol. The intervals between the impulse signals are all equal in time domain. At the receiver, the impulse response signals are summed and averaged. And then, the averaged impulse response signal is zero padded and fast Fourier transformed to obtain the channel estimation. The BER performance of the proposed method is compared with those of conventional estimation method using the long training sequence in fast fading environments. The simulation results show that the proposed method improves by 3 dB in terms of Eb/No, compared with the conventional method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.748-751
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Proceedings of the KIEE Conference
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• 2004.07d
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• pp.2565-2567
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• 2004

본 논문에서는 빠르게 변화하는 이동 무선 채널 환경에서 심각한 성능 저하를 일으키는 인접 심볼 간섭(Inter-symbol interference: ISI)에 대처하기 위해 MLSE(Maximum Likelihood Sequence Estimztion) 등화기의 성능을 향상시키는 방법을 제안하였다. 기존의 MLSE 등화기는 비터비 알고리즘으로 어느 정도 계산량을 감소시켰지만, 정확한 채널 임펄스 응답을 필요로 하기 때문에, 시변 채널에서의 복잡한 채널 추정이 그 문제점으로 남아 있다. 이러한 문제점을 해결하기 위해서, 간단하고 향상된 칼만 필터 기반의 채널 추정기를 새롭게 제안하여 MLSE의 복잡성을 줄였다. 또한, 복잡한 채널 추정을 대신하여 페이딩 채널을 거쳐 수신된 데이터를 클러스터로 매핑하여 클러스터 중심 추정을 이용한 1-D CBSE(1-Dimensional Clustering-based Sequence Equalizer) 알고리즘에, 최소 길이를 지닌 훈련 시퀀스를 제안하여 개선된 1-D CBSE을 이용한 MLSE 등화 성능을 보여주었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.858-860
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도에 대한 드레인 유도 장벽 감소 현상에 대하여 분석하고자한다. 드레인 유도 장벽 감소 현상은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑 농도뿐만이 아니라 상하단 산화막 두께, 하단 게이트 전압 등에 대하여 드레인 유도 장벽 감소 현상을 관찰하였다. 결과적으로 드레인 유도 장벽 감소 현상은 채널도핑 농도에 따라 큰 변화를 나타냈다. 단채널 효과 때문에 채널길이가 짧아지면 도핑농도에 따른 영향이 증가하였다. 도핑농도에 대한 드레인유도장벽감소 현상의 변화는 상하단 산화막 두께에 따라 큰 변화를 보였으며 산화막 두께가 증가할수록 도핑농도에 따른 변화가 증가하는 것을 알 수 있었다. 또한 하단게이트 전압은 그 크기에 따라 도핑농도의 영향이 변화하고 있다는 것을 알 수 있었다.