• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.635-641
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• 2004

This paper presents a new low-cost RF Built-In Self-Test (BIST) circuit for measuring transducer voltage gain, noise figure and input impedance of 5.25GHa low noise amplifier (LNA). The BIST circuit is designed using 0.18${\mu}{\textrm}{m}$ SiGe technology. The test technique utilizes input impedance matching and output transient voltage measurements. The technique is simple and inexpensive. Total chip size has additional area of about 18% for BIST circuit.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1303-1310
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• 2016

In this paper, electrocardiogram (ECG) analog front end with supply voltage of 0.5V has been designed and verified by measurements of fabricated chip. ECG is composed of instrument amplifier, 6th order gm-C low pass filter and variable gain amplifier. The instrument amplifier is designed to have gain of 34.8dB and the 6th order gm-C low pass filter is designed to obtain the cutoff frequency of 400Hz. The operational transconductance amplifier of the low pass filter utilizes body-driven differential input stage for low voltage operation. The variable gain amplifier is designed to have gain of 6.1~26.4dB. The electrocardiogram analog front end are fabricated in TSMC $0.18{\mu}m$ CMOS process with chip size of $858{\mu}m{\times}580{\mu}m$. Measurements of the fabricated chip is done not to saturate the gain of ECG by changing the external resistor and measured gain of 28.7dB and cutoff frequency of 0.5 - 630Hz are obtained using the supply voltage of 0.5V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.647-648
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• 2016

본 논문에서는 차량용 레이더를 위한 저 전력 24GHz CMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 1.8볼트 전원에서 동작하며, 저 전력에서도 높은 전압 이득과 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 고주파 CMOS 공정으로 구현되어 있다. 제안한 회로는 최근 발표된 연구결과에 비해 저 전력동작에서 높은 전압이득 및 낮은 잡음지수 특성을 보였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.4
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• pp.2-12
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• 1967

A pair of insulated-gate metal-oxide-semiconductor field-effect transistor has been used to measure the direct current produced from the ionization chamber in the range of to A. An analisis of direct-current differential amplifier giving the expressions of the common-mode rejection ratio and the rralization of the constant-current generator to give very large effective source resistance has been presented. Voltage gain is 6.6, drift at the room temperature is 1.5mv per day. The common-mode rejection ratio is obtained maximum 84db. These facts give the feasibility of small direct-current measurements by utilizing this type transistors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.3
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• pp.434-439
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• 2002

본 연구는 파장 분할 다중화(WDM：Wavelength Division Multiplexing) 방식 전송 시스템 (Transmission System)에 사용되는 어븀 첨가 광섬유 증폭기(EDFA : Erbium-Doped Fiber Amplifier)의 이득 제어(Gain Control) 방법에 관한 것으로 어븀 첨가 광섬유에서 상호 이득 포화(Cross Gain Saturation) 현상, 이득 비동질 (Gain In-homogeneity) 특성, 그리고 어븀 이온의 밀도 반전(Population Inversion)의 변화 에 의해 출력되는 다 파장 광 신호들의 광 세기가 각기 다르게 출력되는 현상을 고출력을 내도록 구성된 어븀 첨가 광섬유 증폭기와 고속 제어기를 구성하여 위 현상들을 억제하며 이득을 제어하기 위한 레이저 다이오드(Laser Diode : LD)의 제어전압 조사하고, 얻어진 결과들을 토대로 이득 제어에 적합한 방법을 제시하고 제어기를 설계한다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.293-297
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• 2002

본 연구는 파장 분할 다중화(WDM： Wavelength Division Multiplexing) 방식 전송 시스템 (Transmission System)에 사용되는 어븀 첨가 광섬유 증폭기(EDFA： Erbium-Doped Fiber Amplifier)의 이득 제어(Cain Control) 방법에 관한 것으로 어븀 첨가 광섬유에서 상호 이득 포화 (Cross Cain Saturation) 현상, 이득 비동질(Cain In-homogeneity) 특성, 그리고 어븀 이온의 밀도. 반전(Population Inversion)의 변화에 의해 출력되는 다 파장 광 신호들의 광세기가 각기 다르게 출력되는 현상을 고출력을 내도록 구성된 어븀 첨가 광섬유 증폭기와 고속 제어기를 구성하여 위 현상들을 억제하며 이득을 제어하기 위한 레이저 다이오드(Laser Diode : LD)의 제어전압 조사하고, 얻어 진 결과들을 토대로 이득 제어에 적합한 방법을 제시하고 제어기를 설계한다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.90-95
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• 2014

This paper presents a VHF/UHF-band variable gain low noise amplifier for multi-standard mobile TV tuners. A proposed VHF-band variable gain amplifier is composed of a resistive shunt-feedback low noise amplifier to remove external matching components, a single-to-differential amplifier with input PMOS transcoductors to improve low frequency noise performance, a variable shunt-feedback resistor and an attenuator to control variable gain range. A proposed UHF-band variable gain amplifier consists of a narrowband low noise amplifier with capacitive tuning to improve noise performance and interference rejection performance, a single-to-differential with gm gain control and an attenuator to adjust gain control range. The proposed VHF-band and UHF-band variable gain amplifier were designed in a $0.18{\mu}m$ RF CMOS technology and draws 22 mA and 17 mA from a 1.8 V supply voltage, respectively. The designed VHF-band and UHF-band variable gain amplifier show a voltage gain of 27 dB and 27 dB, a noise figure of 1.6-1.7 dB and 1.3-1.7 dB, OIP3 of 13.5 dBm and 16 dBm, respectively.

• Proceedings of the KAIS Fall Conference
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• 2011.05a
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• pp.358-361
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• 2011

본 논문에서는 ADSL용 아날로그 Front-end의 수신단과 송신단에 활용하기 위한 저전압 특성의 3V CMOS 프로그램머블 증폭기(PGA)를 설계하였다. 설계된 수신단의 PGA는 1.1MHz로 연속시간 저역통과 필터와 연결하여 0dB에서 30dB까지 이득을 조정해주며, 송신단의 PGA는 138kHz의 저역필터와 연결하여 -15dB에서 0dB까지의 이득을 조정할 수 있다. 모든 PGA의 이득은 디지털 로직과 메인 컨트롤러에 의해서 프로그램될 수 있도록 설계하였다. 설계된 PGA는 $0.35{\mu}m$ CMOS 파라미터를 이용하여 Hspice 시뮬레이션으로 그 특성을 확인하였다.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.15-18
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• 2013

This paper presents an analog front-end for electroencephalogram(EEG) signal processing. Since EEG signals are typically weak and located at very low frequencies, it is imperative to implement an amplifier with high gain, high common-mode rejection ratio(CMRR) and good noise immunity at very low frequencies. The analog front-end of this paper consists of a programmable-gain instrumentation amplifier and a band-pass filter. A frequency chopping technique is employed to remove the low-frequency noise. The circuits were fabricated in 0.18um CMOS technology and measurements showed that the analog front-end has the maximum gain of 60dB and >100dB CMRR over the programmable gain range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.143-152
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• 2004

A novel low-power wideband bipolar second-generation current conveyors(CCIIs) and its application to universal instrumentation amplifier(UIA) were proposed. The CCII for accuracy voltage or current transfer characteristics and low current input impedance adopted adaptive current bias circuit into conventional class Ab CCII. The UIA consists of only two CCIIs and four resistors. Three instrumentation function of the UIA can be realized by selection of input signals and resistors. The simulation results show that the CCII has input impedance of 2.0$\Omega$ and the voltage gain of 60㏈ for frequency range from 0 to 50KHz when used as a voltage amplifier. The CCII has also good characteristics of current follower for current range from -100㎃ to ＋100㎃. The simulation results show that the UIA has three instrumentation amplifier functions without resistor matching. The UIA has the voltage gain of 40㏈ for frequency range from 0 to 100KHz when used as a fully-differential instrumentation amplifier. The power dissipations of the CCII and the UIA are 0.75㎽ and 1.5㎽ at supply voltage of $\pm$2.5V, respectively.