• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.8C
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• pp.806-813
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• 2009

This paper presents a modem chip design for high-speed wireless communications. Among the high-speed communication technologies, we design the UWB (Ultra-Wideband) modem SoC (System-on-Chip) Chip based on a MB-OFDM scheme which uses wide frequency band and gives low frequency interference to other communication services. The baseband system of the modem SoC chip is designed according to the standard document published by WiMedia. The SoC chip consists of FFT/IFFT (Fast Fourier Transform/Inverse Fast Fourier Transform), transmitter, receiver, symbol synchronizer, frequency offset estimator, Viterbi decoder, and other receiving parts. The chip is designed using 90nm CMOS (Complementary Metal-Oxide-Semiconductor) procedure. The chip size is about 5mm x 5mm and was fab-out in July 20th, 2009.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.4
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• pp.18-26
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• 2001

In this paper, we propose an ATC(Automatic Transfer mode Controller) algorithm and an average-mode-change method for use in Gear shift PLL which can automatically change loop gain. The proposed ATC algorithm accurately detects proper timing or the mode change and has a very simpler structure - than the conventional lock detector algorithm often used in QPSK. And the proposed average mode change method can obtain low errors of estimated frequency offset by averaging the loop filter output of frequency component in shift register. These algorithms are also useful in designing ASIC, since these algorithms occupy small circuit area and are adaptable for high speed digital processing. We also present phase tracking performance of proposed Gear-shift PLL, which is composed of polarity decision PD, ATC and average mode change circuit, and analyze the results by examining constellation at each mode.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.43 no.3 s.309
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• pp.9-16
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• 2006

Many image and video compression algorithms work by splitting the image into blocks and producing variable-length code bits for each block data. If variable-length code data are transmitted consecutively over error-prone channel without any error protection technique, the receiving decoder cannot decode the stream properly. So the standard image and video compression algorithms insert some redundant information into the stream to provide some protection against channel errors. One of redundancies is resynchronization marker, which enables the decoder to restart the decoding process from a known state in the event of transmission errors, but its usage should be restricted not to consume bandwidth too much. The Error Resilient Entropy Code(EREC) is well blown method which can regain synchronization without any redundant information. It can work with the overall prefix codes, which many image compression methods use. This paper proposes EREREC method to improve FEREC(Fast Error-Resilient Entropy Coding). It first calculates initial searching position according to bit lengths of consecutive blocks. Second, initial offset is decided using statistical distribution of long and short blocks, and initial offset can be adjusted to insure all offset sequence values can be used. The proposed EREREC algorithm can speed up the construction of FEREC slots, and can improve the compressed image quality in the event of transmission errors. The simulation result shows that the quality of transmitted image is enhanced about $0.3{\sim}3.5dB$ compared with the existing FEREC when random channel error happens.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.239-250
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• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.12
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• pp.16-21
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• 2007

In this paper, the dual-band voltage-controled oscillator (VCO) using the composite right/left-handed (CRLH) transmission line (TL) and the tunable negative resistance based on the fin diode is presented. It is demonstrated that the CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the phase slope of the CRLH TL, and the frequency ratio of the two operating frequencies can be a non-integer. Each frequency band of VCO has to operate independently, so we have used the tunable negative resistance based on the pin diode. When the forward bias has been into the pin diode, the phase noise of VCO is $-108.34\sim-106.67$ dBc/Hz @ 100 kHz in the tuning range, $2.423\sim2.597$ GHz, whereas when the reverse bias has been fed into the pin diode, that of VCO is $-114.16\sim-113.33$ dBc/Hz @ 100 kHz in the tuning range, $5.137\sim5.354$ GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.34-41
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• 2011

This paper presents a wide tuning range, fine-resolution DCO (Digitally Controlled Oscillator) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. To cover the wide tuning range, an automatic three-step coarse tuning scheme is proposed. The DCO total frequency tuning range is 1.4 GHz (2.1 GHz to 3.5 GHz), it is 58 % at 2.4 GHz. An effective frequency resolution is 0.14 kHz/LSB. The proposed DCO is implemented in 0.13 ${\mu}m$ CMOS process. The total power consumption is 6.6 mW from a 1.2 V supply voltage. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.2
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• pp.85-89
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• 2011

In this paper, a novel Class-E power amplifier using metamaterials has been realized with one RF LDMOS diffusion metal-oxide-semiconductor field effect transistor. The CRLH structure can lead to metamaterial transmission line with the Class-E power amplifier tuning capability. The CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Also, the proposed power amplifier has been realized by using the CRLH structure in the output matching network for better efficiency. Operating frequencies are chosen at 13.56 MHz in this work. The measured results show that the output power of 39.83 dBm and the gain of 11.83dB was obtained. At this point, we have obtained the power-added efficiency (PAE) of 73 % at operation frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.659-664
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using $0.12{\mu}m$ metamorphic high electron-mobility transistors(mHEMTs). The devices with a $0.12{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an $f_T$ of 170 GHz, and an $f_{MAX}$ of more than 300 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than - 35 dBc fundamental suppression. The phase noise of - 81.5 dBc/Hz at 1 MHz offset was measured. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• Journal of Advanced Navigation Technology
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• v.18 no.5
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• pp.476-482
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• 2014

Recently, with the growth of various sensor applications, the need of wireless communication systems which can support variable data rate is increasing. IEEE 802.15.4 LR-WPAN system using 2.45 GHz frequency band is very popular for the sensor applications. However, since LR-WPAN only supports the data rate of 250 kbps, it has a limit to be applied to various sensor networks. Therefore, we define the preamble structure which can support the data rates of 31.25 kbps, 62.5 kbps, 125 kbps, and present the low-complexity hardware architecture for time synchronizer based on double-correlation algorithm which can resist the CFO (carrier frequency offset). Implementation results show that the proposed time synchronizer include the logic slice of 18.36 K and four DSP48s, which are reduced at the rate of 79.1% and 99.4%, respectively, compared with existing architecture.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.4
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• pp.88-94
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• 2004

The electrical design of the Ka-band antenna for the domestic Communications and Broadcasting Satellite (CBS) is described. The antenna has the offset Gregorian structure and is installed on the Earth-facing panel of the satellite. The electrical performance specifications for the antenna were determined from the required EIRP and G/T through the payload level performance analysis. This paper utilized the reflector shaping technology for the trade-off among the major performance parameters, resulting in compliance of all the parameters. The designed antenna shows 37.95 dBi EOC (End of Coverage) gain and 28.7 dB sidelobe isolation for transmit band, and 37.49 dBi EOC gain and 31.1 dB sidelobe isolation for receive band, The electrical performances of the antenna have been verified via the electrical testing of a manufactured EQM (Engineering Qualification Model) antenna.