• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.63-63
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• 2001

디바이스의 크기가 0.25㎛이하로 축소됨에 따라 DRAM(Dynamic Random Access Memory) 제조업체들은 칩 크기를 줄이고 지역적인 배선으로 사용하기 위해서 기존의 텅스텐-폴리사이드 비트-선에서 텅스텐 비트-선으로 대체하고 있다. 본 논문에서는 다양한 RTP 온도와 추가 이온주입을 사용하여 낮은 저항을 갖는 텅스텐 비트-선 제조 공정에 대해 다루었다. 그 결과 텅스텐 비트선 저항에 중요한 메계변수는 RTP Anneal 온도와 BF₂ 이온 주입 도펀트임을 알 수 있었다. 이러한 텅스텐 비트-선 공정은 고밀도 칩 구현에 중요한 기술이 된다.

• Progress in Medical Physics
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• v.5 no.2
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• pp.13-20
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• 1994

The thermoluminescence(TL) glow curves and the optical absorption of $Al_2O_3$ irradiated with ${\gamma}$-ray, electron, and $Li^{+}$ ion followed by electron irradiation have been investigated to determine the relation of TL peak to its defect type. The TL glow curve of $Al_2O_3$ irradiated with ${\gamma}$-ray shows TL peaks at 380 K, 415 K, and 475 K. The UV photobleached TL glow curve of $Al_2O_3$ irradiated with ${\gamma}$-ray shows that the 380 K and 475 K TL peaks completely disappear while the 415 K TL peak still exists. The electron beam induced TL glow curve of $Al_2O_3$ after $Li^{+}$ ion implantation shows that the TL peak at 440 K is enhanced by a factor of 2 over the TL intensity of unimplanted $Al_2O_3$ while the TL peak at 380 K evidently disappears The implanted $Li^{+}$ ions are assumed to form singly charged interstitial cations and then recombine with electron trapped in F centers to produce F+ centers. The 380 K and 475 K TL peaks are proposed to be associated with F center, while the 415 K and 440 K TL peak are connected with F$^{+}$ center.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.97-98
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• 2005

양성자 조사법에 의하여 고속 전력용 다이오드를 제작하기 위하여 punch-through 다이오드에 다양한 조건으로 양성자를 조사하였다. 동일한 소자에 전자선을 조사한 소자와 속도 향상을 위한 공정이 행하여지지 않은 동일한 소자 각각의 특성을 비교 분석하였다. 양성자 주입은 주입 에너지를 1 MeV 와 1.3 MeV로, 각 에너지 조건에서 도즈를 $1\times10^{12}cm^{-2}$, $1\times10^{13}cm^{-2}$로 변화 시켰다. 분석 결과 양성자 주입된 소자에서 역방향 회복시간은 최소 소자의 약 45%, 전자선이 조사된 소자에 비하여 약 73 %의 값으로 향상시킬 수 있었으며 역방향 항복 전압과 순방향 저항은 처리되지 않은 소자와 전자빔이 조사된 시편들의 값과 비슷한 값을 나타내었다.

• 대한치과보철학회:학술대회논문집
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• 1997.11a
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• pp.26-26
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• 1997

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.375-381
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• 2001

As the device geometry continuously shrink down less than sub-quarter micrometer, DRAM makers are going to replace conventional tungsten-polycide bit-line with tungsten bit-line structure in order to reduce the chip size and use it as a local interconnection. In this paper we showed low resistance tungsten bit-line fabrication process with various RTP(Rapid Thermal Process) temperature and additional ion implantation. As a result we obtained that major parameters impact on tungsten bit-line process are RTP Anneal temperature and BF$_2$ ion implantation dopant. These tungsten bit-line process are promising to fabricate high density chip technology.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.83-83
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• 1992

• 대한치과보철학회:학술대회논문집
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• 2005.11a
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• pp.85-85
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• 2005

• Journal of the Korea institute for structural maintenance and inspection
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• v.10 no.6
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• pp.191-197
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• 2006

This study is to establish a standardization of injection system by inorganic material for crack repair of tunnel concrete structures. For this various surveys and experiments were carried out as followed. The first we surveyed capability of injection and crack pattern of concrete structures in site. and second we analyzed the relationship between crack width and volume of injection, and decided pressure and volume of injection. Finally we evaluated the relationship between crack width and volume of injection with kind of concrete structures, and between required time for injection and crack width with thickness of structure. From these surveys and experiments, we cleared the relationship between crack patterns and injection technologies such as volume, pressure of injection and required time for injection with kind of structure.

• Journal of the Korean GEO-environmental Society
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• v.25 no.3
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• pp.5-11
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• 2024

Promising geological structures for carbon dioxide capture and subsurface storage include aquifers, depleted reservoirs, and gas fields. Among these, aquifers are gaining attention due to their potential for storing significant amounts of carbon dioxide compared to other geological structures. Therefore, there is a growing interest in enhancing carbon dioxide storage efficiency by understanding the characteristics of aquifers and developing technologies tailored to their properties. In this study, the storage efficiency of carbon dioxide injection following surfactant pre-injection into porous micro-models was evaluated. The results indicate that as the concentration of the surfactant solution injected prior to carbon dioxide injection increases, storage efficiency improves. Conversely, lower concentrations require more surfactant injection to enhance storage efficiency. Furthermore, under identical surfactant concentration conditions, the storage efficiency from surfactant pre-injection prior to supercritical carbon dioxide injection is approximately 30% lower compared to surfactant-co-solvent substitution as observed in previous studies. However, under the maximum concentration conditions investigated in this study, similar storage efficiencies to those of previous studies were achieved. These findings are expected to guide concentration determinations for surfactant application aimed at enhancing carbon dioxide storage efficiency in aquifers in future studies.

• Progress in Medical Physics
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• v.5 no.2
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• pp.3-12
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• 1994

$\^$137/Cs gamma ray induced thermoluminescenc(TL) from Na$\^$+/ ion implanted Al$_2$O$_3$ and unimplanted Al$_2$O$_3$ and the TL from Na$\^$+/ ion implanted Al$_2$O$_3$ are measured over the temperature range of 340K～620K. The TL curve of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is split into iolated TL peak located at 415K, 452K, 508K, and 568K. Because that the concentration of trapped char he carries of $\^$137/Cs gamma ray induced Al$_2$O$_3$ implanted with Na$\^$+/ ion is larger than that of Na$\^$+/ ion only implanted Al$_2$O$_3$, and the trap concentration of Na$\^$+/ ion implanted Al$_2$O$_3$ is much than that of $\^$137/Cs gamma ray only irradiated Al$_2$O$_3$, the TL intensity of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is about 20 times and 5 times higher than that of Al$_2$O$_3$ only implanted with Na$\^$+/ ion and Al$_2$O$_3$ only irradiated with $\^$137/Cs gamma ray, respectively. In proportion as ion implantation does and energy are incresed, the number of generated defects and the rate of defect creation are incresed, respectively. Therefore the TL intensity of ion implanted Al$_2$O$_3$ is depend on ion dose and energy. Acccrding to increse of incident ion mass, the TL intensity of ion implanted Al$_2$O$_3$ is abruptly decresce. This result showes that the TL intensity of ion implanted Al$_2$O$_3$ is closely related to ion depth range as wll as rate of defect creatin. The TL intensity of ion implanted Al$_2$O$_3$ is found to be related with defects generated by ion implantation. Table Caption