• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.56.2-56.2
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• 2011

고효율 염료감응 태양전지를 제작하기 위해 Sol-gel법을 사용하여 $TiO_2$ 분말을 제조하였다. 제조 과정 중 다양한 양의 nitric acid를 첨가하여 pH를 조절하였다. Sol-gel법을 위한 출발 물질로 titanium (IV) isopropoxide(TTIP)와 DI water를 사용하였으며 nitric acid은 0, 0.05, 0.1, 0.15의 몰비(nitric acid/TTIP)로 첨가하였다. 첨가한 결과 pH는 $22^{\circ}C$에서 각각 5.52, 2.26, 1.68, 1.38이었다. 얻어진 $TiO_2$ 콜로이드 용액은 결정성 있는 분말로 제조 후 $5{\times}5[mm^2]$ 크기의 염료감응 태양전지를 제작하는데 사용 되였다. $TiO_2$의 결정구조 및 형태는 cell의 XRD와 FE-SEM으로 분석되었고 전기화학적 특성을 분석하기 위해 irradiation of AM 1.5 ($100mW/cm^2$) simulatedsunlight에서 I-V 곡선을 측정하였다. 측정 결과 몰비(nitric acid/TTIP) 0.05, pH가 2.26일 때 가장 우수한 효율 특성을 보였다.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.69-74
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• 2006

Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.2-368.2
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• 2014

$SnO_2$을 이용한 반도체는 기체 센서, 트랜지스터, 태양전지와 같은 여러 분야에 적용 가능하기 때문에 많은 각광을 받고 있다. $SnO_2$을 이용한 반도체 소자는 높은 화학적 안정성과 독특한 물리 화학적 특성을 지니고 있을 뿐만 아니라 부피에 대한 높은 표면적 비율을 가지고 있다. 우수한 $SnO_2$나노구조를 얻기 위해서 전자관 박막증착, 졸겔법, 물리적 증기증착, 열증착과 같은 다양한 방법들이 사용되었다. 다양한 합성 방법들 중에서 전기화학 증착법은 높은 성장율, 대면적 공정, 낮은 가격과 같은 장점을 가지고 있어 많은 연구가 진행되었지만, $SnO_2$ 구조의 성장조건에 따른 체계적인 연구는 진행되지 않았다. 본 연구는 indium-tin-oxide (ITO)로 코팅된 유리 기판 위에 전기화학 증착법을 사용하여 다양한 성장 조건에 따라 성장된 $SnO_2$나노구조들의 물리적 특성들을 관찰하였다. ITO 유리 기판 위에 성장된 $SnO_2$나노구조는 음극의 전구체와 전류의 상호작용에 의해 생성되는 산소 분자의 환원에 의해 형성된다. $SnO_2$나노구조의 모양은 전기화학 증착의 성장 환경에 따라 달라진다. $SnO_2$나노구조를 관찰하기 위해 시간에 따른 전압-전류, X-ray광전자분광법, 주사형전자현미경, X-ray회절분석법을 사용하여 측정하였다. ITO 유리 기판 위에 성장한 $SnO_2$ 소자에 서로 다른 인가 전압을 가해 주었을 때에 따른 전류밀도를 측정하였다. 일정한 인가전압에서 $SnO_2$나노구조의 X-ray광전자분광법 측정 을 통해 화학적 결합과 X-ray회절분석법 통한 $SnO_2$ 성장 방향을 관찰하였다. 주사형전자현미경 측정을 통하여 $SnO_2$의 표면을 관찰하였다

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.14-17
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• 2006

[ $AIFeO_3$ ]has been studied by x-ray diffraction (XRD), vibrating sample magnetometer, Mossbauer spectroscopy. The crystal structure is found to orthorhombic with the lattice parameters being $a_0=4.983\;{\AA},\;b_0=8.554\;{\AA},\;c_0=9.239\;{\AA}$, Magnetic hysteresis curve for $AIFeO_3$ showed weakly ferromagnetic phase at room temperature and a asymmetric shape dependent on the direction of applied field at low temperature. The Curie temperature determined by the temperature dependence of magnetization is 250 K. Mossbauer spectra of $AIFeO_3$ have been taken from 4.2 K to 295 K. Isomer shift at room temperature are found to be $0.11\~0.32\;mm/s$, which is consistent with ferric state. The absorption lines widths become broader with increasing temperature, which is attributed to the Fe ions distribution of each cation site and anisotropy energy difference of each sublattice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.344-344
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• 2008

최근 들어, 압전 세라믹스 제조기술의 급속한 발전으로 기계, 전자뿐만 아니라 휴대용 전자기기의 초소형 적층형 압전모터 및 압전변압기 같은 고품질 압전소자의 개발에 있어 특히 소자의 소형화에 따라 나노크기의 분말제조가 연구의 주류를 이루고 있다. 현재 이러한 나노크기의 세라믹스 제조에 사용되는 방법으로는 화학적 공침법, 졸겔법, 수열반응, 그리고 고에너지 볼밀법등이 보고되고 있다. 볼밀링 공정은 세라믹제조 시 필수 불가결한 공정이나 일반적으로 미세화에 그 한계가 있어 $1{\mu}m$이하의 입자크기를 가지는 분말은 제조가 곤란한 것으로 인식되어 왔다. 그러나 고에너지 볼밀을 이용한 볼밀링은 원료의 변형, 파괴 등과 같은 원료의 물리적 변화 뿐만 아니라 원료를 구성하는 원자/분자 구조에 영향을 미쳐 원료의 화학적 특성의 변화를 유발한다. 이러한 화학적 특성의 변화는 이종 원료간의 화학 반응성을 향상시켜 밀링 중에 새로운 화학종의 생성을 유발하게 되는데 이러한 현상을 mechanochemical 효과라 한다. 이러한 mechanochemical 효과는 나노 분말 입자의 제조뿐만 아니라, 분자설계, 재료합성, 자원처리 및 리사이클링 등에도 그 적용이 시도되고 있다. 이러한 mechanochemical 효과를 이용하여 분말을 미세화 함으로써 저온 소결과 재료특성 향상을 기대해 볼 수 있다. 따라서, 이번 연구에서는 우수한 압전 특성을 가진 PMN-PNN-PZT조성을 가지고 시편을 제작하였으며, 고에너지 볼밀시간에 따라 그 압전 및 유전특성을 조사하였다.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.