• Title/Summary/Keyword: 정전파괴

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A Study on the Design Parameters of the Static Ring in the Ultra-high Voltage Non-uniform Electric Field (초고압 불평등 전계에서 정전링 설계변수에 대한 연구)

  • Kim, Jin-Sung;Seo, Min-Seong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.7
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    • pp.577-582
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    • 2020
  • Electricity produced at power plants is distributed to consumers through several stages of substations. At this time, an ultra-high voltage transformer is needed in the initial transmission stage to transmit a voltage suitable for each consumer. A high voltage, non-uniform electric field is formed at the end of the winding of the ultra-high voltage transformer, which carries a risk of dielectric breakdown. The winding of the ultra-high voltage transformer is an electrode, which is the key to converting the magnitude of the voltage. A non-uniform electric field is formed along the shape of the winding end, resulting in high electrical stress. The static ring installed at the upper and lower ends of the winding is used to disperse the stress at the winding end. Several variables should be considered when designing a static ring. Among them, this study examined how the curvature of the static ring, the thickness of the insulating paper, the number of barriers, and barrier thickness affect the electrical stress of the static ring using the Finite Element Method. Suggestions to be considered when designing the static ring are proposed through the FEM results.

Broadband Multi-Layered Radome for High-Power Applications (고출력 환경에 적용 가능한 광대역 다층 구조 레이돔)

  • Lee, Ki Wook;Lee, Kyung Won;Moon, Bang Kwi;Choi, Samyeul;Lee, Wangyong;Yoon, Young Joong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.1
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    • pp.50-60
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    • 2018
  • In this paper, we developed a broadband multi-layered radome applicable for high-power applications. In this regard, we presented the wave propagation characteristics of the broadband multi-layered radome with the ABCD matrix and obtained the optimal thickness and the material constant for each layer by an optimization algorithm called "particle swarm optimization," implemented by a commercial numerical modeling tool. Further, we redesigned it in view of mechanical properties to reflect environmental conditions such as wind, snow, and ice. The power transmission property was reanalyzed based on the recalculated data of each layer's thickness to consider the limitations of the fabrication of a large structure. Under the condition of a peak electric field strength that is 10 dB above the critical electric field strength in air breakdown, we analyzed the air breakdown by radio frequency(RF) in the designed radome using the commercial full-wave electromagnetic tool. The radome was manufactured and tested by continuous wave(CW) RF small signal and large signal in an anechoic chamber. The test results showed good agreement with those attained by simulation.

지중배전케이블의 활선 열화진단기술

  • 정동원;김상준
    • 전기의세계
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    • v.42 no.4
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    • pp.36-44
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    • 1993
  • 최근 사회적인 여건변화와 전산계산기등의 보급으로 인하여 배전선로를 휴전시키기가 곤란하고, 휴전작업의 계획시 장기간이 소요되며, 진단에 필요한 장비가 상당하고, 원상복구후 송전에 장시간이 피룡하며, 열화진단시 직류 고전압인가(인가전압이 낮으면 불량케이블을 검출할 수 없음)에 따른 케이블의 열화촉진 및 절연파괴사고의 유발 등 현행 방법과 같은 휴전에 의한 직류고전압 열화진단 방법에도 문제가 많다. 따라서 수용가에 대한 봉사수준을 향상하고, 휴전작업으로 인한 정전시간을 경감하며, 열화진단에 소요되는 장비와 인력을 경감시키기 위하여 케이블 절연성능의 열화진단을 활선상태(교류전압이 인가되어 운전중인 상태)에서 실시하여야 할 필요성이 매년 높아가고 있다.

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기류방출형 정전기제거장치의 개발에 관한 연구

  • 이동훈;박훈규
    • Proceedings of the Korean Institute of Industrial Safety Conference
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    • 2003.05a
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    • pp.167-172
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    • 2003
  • 액정판넬(LCD) 및 반도체 제조공정에 있어서 정전기 발생으로 인하여 미세한 먼지가 LCD 및 반도체 웨이퍼에 부착되거나, 정전기 방전에 의해 반도체소자 및 LCD 유리기판상의 패헌의 파괴를 야기하여 제품의 수율을 저하시키고 제조원가를 상승시키는 주요한 요인이 된다. 현재 이러한 제조공정에서 정전기를 위한 대책으로 코로나방전에 의한 이온바(Ion Bar) 및 이온브로어(Ion Blower)를 제전설비로 사용하고 있으나, 이 장치는 코로나 방전에 의한 이온을 발생시키고 이온화된 공기를 불어 내기 위하여 팬을 사용하여 공기를 대류 시킨다.(중략)

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Welding Quality Improvement of Inverter Spot Welder by Electrode Movement Control (전극분리 제어에 의한 인버터 스폿용접기의 용접품질 향상)

  • 김재문;김종덕;원충연;최규하;김규식;목형수
    • The Transactions of the Korean Institute of Power Electronics
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    • v.5 no.3
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    • pp.276-284
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    • 2000
  • 저항 스폿용접기에서 용접품질의 보증은 오래 계속 되어온 문제이었다. 본 논문에서는 용접품질과 전극분리와의 관계를 조사하였으며 전극분리가 하나의 제어변수로써 사용될 수 있음을 실험적으로 입증하였다. 피드백신호로서 전극분리를 이용한 퍼지제어에 기초를 둔 용접품질개선을 제시하였다. 저항 스폿용접기의 용접품질은 인장전단강도시험과 같은 파괴적인 검사에 의해 증명되었다. 시험결과는 퍼지 제어기를 이용한 전극분리 제어의 성능이 종래의 정전류 제어와 비교하여 훨씬 더 우수하였다.

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Evaluation on Damage Behavior of Al-4.5%Mg-0.6%Mn Al Alloy with Potentiostatic Experiment Time (Al-4.5%Mg-0.6%Mn 알루미늄 합금의 정전위 시간 변수에 따른 손상거동 평가)

  • Kim, Seong-Jong;Woo, Yong-Bin;Han, Min-Su;Jang, Seok-Ki
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.18 no.6
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    • pp.569-576
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    • 2012
  • In general, aluminum alloys forms the passive film($Al_2O_3$, $Al_2O_3{\cdot}3H_2O$) in neutral solution. However, the passive film created on the surface will be destroyed by chloride ions contained in sea water so the corrosion will occur. In this study, in order to solve the problem of corrosion under a seawater environment, potentiostatic protection techniques were applied to Al-4.5%Mg-0.6%Mn aluminum alloy in seawater. At polarization experiments, active state were observed at anodic polarization and concentration polarization by reduction of dissolves oxygen and activation polarization were found at anodic polarization. As a results of potentiostatic experiment, calcareous deposit were created much more as applying time increase from the turning point of the concentration polarization and activation polarization and crevice corrosion was partially observed between calcareous deposit and surface of base metal. Overall potentiostatic anodic polarization experiment was difficult to apply potentiostatic corrosion protection technology by occurrence of active state, whereas potentiostatic cathodic polarization experiment examined optimum corrosion protection condition of -1.1 V~-0.75 V within the range of concentration polarization considered various applying time.

Electrostatic discharge simulation of tunneling magnetoresistance devices (터널링 자기저항 소자의 정전기 방전 시뮬레이션)

  • Park, S.Y.;Choi, Y.B.;Jo, S.C.
    • Journal of the Korean Magnetics Society
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    • v.12 no.5
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    • pp.168-173
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    • 2002
  • Electrostatic discharge characteristics were studied by connecting human body model (HBM) with tunneling magnetoresistance (TMR) device in this research. TMR samples were converted into electrical equivalent circuit with HBM and it was simulated utilizing PSPICE. Discharge characteristics were observed by changing the component values of the junction model in this equivalent circuit. The results show that resistance and capacitance of the TMR junction were determinative components that dominate the sensitivity of the electrostatic discharge(ESD). Reducing the resistance oi the junction area and lead line is more profitable to increase the recording density rather than increasing the capacitance to improve the endurance for ESD events. Endurance at DC state was performed by checking breakdown and failure voltages for applied DC voltage. HBM voltage that a TMR device could endure was estimated when the DC failure voltage was regarded as the HBM failure voltage.

A Study on Analysis of Electrostatics Destruction of Electronic Equipment (전자부품의 정전파괴(ESD) 분석에 관한 연구)

  • Lee, Du-Young
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.10 no.6
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    • pp.235-241
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    • 2010
  • The static electricity generated by friction of two objects is called frictional electricity. The main cause of troubles in electronic components for military and civil use as well as in military radar appliances is found mostly in parts like LSI memories, particularly when they lose information of function momentarily while in operation, which usually leads to a fatal cause of troubles in the equipment. Troubles occur if electric noise is caused by the spark effected from discharge of static electricity from the equipment that is used nearby.

Effects of Wet Oxidation on the Nitride with and without Annealing (열처리 전후의 질화막에 대한 습식산화의 효과)

  • Yun, Byeong-Mu;Choe, Deok-Gyun
    • Korean Journal of Materials Research
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    • v.3 no.4
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    • pp.352-360
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    • 1993
  • A nitride layer was df'posited on the thermal oxide layer by LPCVD process. ONO(oxidenitricle oxide) capacitors with various thickness of component layer wore fabricated by wet reoxidation of the nitride with and without anrwalmg treatment and their properties were investigated. As a result of observation on the refrative index and etching behavior of the ONO fIlms, the nitride layer OF 40 A thick ness was not so dense that the bottom oxide during the reoxidation process and the capability of securing the capacitance decreased. The conduction current in the ONO multl-Iayer dielctric film was reduced as the bottom(or top) oxide layer became thicker. However, in the case of oxide with thickness more than 50A, it merely plays a factor of reduction in capacitance, and the effect of barrier for hole injection was not so much increased. Annealing of the nitride laypr bpfore reoxidation did not show a grpat effects on the refractive index and capacitance of the film, however, the annealing process increased the breakdown voltage by 2${\cdot}$V.

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Characterization of Structure and Electrical Properties of $TiO_2$Thin Films Deposited by MOCVD (화학기상증착법에 의한$TiO_2$박막의 구조 및 전기적 특성에 관한 연구)

  • Choe, Sang-Jun;Lee, Yong-Ui;Jo, Hae-Seok;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.5 no.1
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    • pp.3-11
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    • 1995
  • $(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

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