• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.1-11
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• 2002

In this paper, new simple method for the calculation of depletion region under complex geometry and general purpose numerical simulator that could handle this were developed and applied in the analysis of SCM with nanoscale tip, which is a promising tool for high resolution dopant profiling. Our simple depletion region seeking algorithm alternatively switches material of elements to align ionized element boundary with contour of zero potential. To prove the validity of our method we examined whether our results satisfy the definition of depletion region and compared those with known values of un junction and MOS structure. By modeling of capacitance based on the shape of depletion region and potential distribution, we could calculate the CV curve and dC/dV curve between silicon substrate and nanoscale SCM tip.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.7
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• pp.1211-1217
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• 2016

Discharge characteristics of inductively coupled plasma were investigated by using electrostatic probe and fluid simulation. The Inductively Coupled Plasma source driven by 13.56 Mhz was prepared. The signal attenuation ratios of the electrostatic probe at first and second harmonic frequency was tuned in 13.56Mhz and 27.12Mhz respectively. Electron temperature, electron density, plasma potential, electron energy distribution function and electron energy probability function were investigated by using the electrostatic probe. Experiment results were compared with the fluid simulation results. Ar plasma fluid simulations including Navier-Stokes equations were calculated under the same experiment conditions, and the dependencies of plasma parameters on process parameters were well agreed with simulation results. Because of the reason that the more collision happens in high pressure condition, plasma potential and electron temperature got lower as the pressure was higher and the input power was higher, but Electron density was higher under the same condition. Due to the same reason, the electron energy distribution was widening as the pressure was lower. And the electron density was higher, as close to the gas inlet place. It was found that gas flow field significantly affect to spatial distribution of electron density and temperature.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.3
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• pp.422-428
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• 2015

A 2.45GHz microwave plasma source with a linear antenna has been developed for low temperature large scale deposition processing. Microwave power is transmitted through WR340 waveguide and a copper rod, linear antenna, is located in a quartz tube. The power matching is effectively achieved by a linear antenna is located at ${\lambda}_g/4$ or $3{\lambda}_g/4$ from the end of WR340 waveguide. The Ar plasma was generated along the surface of quartz tube and a clear standing wave pattern with nearly 10cm wavelength was observed at Ar pressure of 200mTorr and 200W input power. The electron density and electron temperature were investigated by using the electrostatic probe. The electron density and electron temperature were highly measured near the surface of quartz tube. Ar plasma density along the quartz tube is mostly uniform despite standing wave set-up and antenna of long length. A uniform temperature was measured at 10~40cm distance from the end quartz tube and 5cm distance from the surface of quartz tube.