• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.77-86
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• 1998

A two-chip humidity sensor system has been developed which consists of a capacitive sense element die and a CMOS interface chip. The sense element was fabricated using thin polyimide films on (100) silicon substrate and showed excellent linearity(0.72%FS), low hysteresis (<3%) and low temperature coefficient(-0.0285 ~-0.0542pF/K) over a wide range of relative humidity and temperature. The capacitance-relative humidity characteristic exhibited a drift of 2~3% after 9 weeks of exposure to 4$0^{\circ}C$/90%RH. The signal-conditioning circuitry was fabricated using an 1.2- ${\mu}{\textrm}{m}$, one poly double metal CMOS process. The measured output voltage of the sensor system was directly proportional to relative humidity and showed good agreement with theory.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1997-1999
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• 2002

고분자 주쇄(Main chain)의 소수성을 가지는 플루오르 그룹을 배제시킨 습도 민감성 폴리이미드를 합성 및 이미드화 하였고, 이를 이용한 초고참도 습도 센서를 제작 및 측정하였다. 사용된 폴리이미드는 다이아민계로 Oxydianyline(ODA)와 다이안하이드라이드계로 Pyromellitic dianhydried(PMDA)를 유기용매 Dimethyla cetamide(DMAc) 하에서 폴리이미드 전구체 (Polyamic acid)를 합성하였으며, 진공 및 승온 조건에서 유기용매를 제거하여 이미드화(Imidization) 반응을 진행시켜 제조하였다. 본 습도 센서는 정전용량형 고감도 습도 센서로 디자인되었으며 실리콘 웨이퍼상에서 일반적인 반도체 공정을 이용하여 구현하였다. 본 습도 센서는 센서 크기와 유효면적, 감습층의 두께를 주요 변수로 설정하였으며 이에 따른 습도 민감성 효과를 평가 및 분석하였다. 측정 결과 유효면적 70%, 감습층 두께 $1.1{\mu}m$ 로 제작된 습도 센서는 상대숨도$20%{\sim}90%$ 영역에서 캐패시턴스와 선형적 상관관계를 보여주고 있으며, 습도 민감도는 3.9 pF/%RH 클 얻을 수 있었다.

• Electrical & Electronic Materials
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• v.6 no.4
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• pp.339-346
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• 1993

정전결합 유동가스형 플라즈마 중합장치를 이용하여 여러가지 모노머에 대한 유기고분자 박막을 빗모양 전극위에 형성하고 이들 박막의 감습특성을 검토하기 위해 주파수범위를 60[kHz]-100[kHz]로 변화시켜 가면서 상대습도 20-90[%RH]범위에서 정전용량의 변화를 측정하였다. 상대습도가 증가함에 따라 정전용량은 일반적으로 증가했으며 방전조건중 방전전력이 낮을수록 그리고 중합시간이 짧을수록 정전용량의 증가폭이 크게 나타났다. 그리고 정전용량 측정시 박막에 인가한 전원의 주파수가 낮을수록 정전용량의 변화에 대한 선형성과 증가폭이 분명함을 알았다.

• Polymer(Korea)
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• v.30 no.3
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• pp.207-209
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• 2006

We fabricated a capacitive-type humidity sensor using poly (p-phenylene ether sulfone: PES) as a humidity sensitive layer. The PES was dissolved in m-cresol $(CH_3C_6H_4OH)$ and spin-coated on ITO-coated glass substrate. Gold was deposited by sputtering as a water-permeable upper electrode. The capacitance of the sensor was inversely proportional to sensing film thicknesses and showed an excellent linearity of less than 1% in the humidity range of 20 to 90%. The sensor haying a $1.4{\mu}m$ sensing layer showed a hysteresis of 1.3% and a good sensitivity of 1.14 at 20 kHz.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.4
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• pp.569-576
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• 2004

In this paper, passive telemetry capacitive humidity sensor system using a RLSE(Recursive Least Square Estimation) technique is proposed. To overcome the problem like power limits and complications that general passive telemetry sensor system including IC chip has, the principle of inductive coupling is applied to model the sensor system. Specially. by applying the forgetting factor we show that the accuracy of its estimation can be improved even in the case of time varying parameter and also the convergence time can be reduced.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.15-21
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• 1995

In this paper, $TiO_{2}-V_{2}O_{5}$ humidity sensors are fabricated by Sol-Gel method. For the establishment of optimum processing condition which is good humidity sensitive characteristics for specimens, their microstructures and crystalline-structures are analysed. Grain size increases with substitution rate of $V^{5+}$ on $Ti^{4+}$ site. From the analysis of XRD, $V^{5+}$ peak can't confirm with $V_{2}O_{5}$ rate. Their humidity sensitive characteristics is good at 1mol% of $V_{2}O_{5}$ rate and heat-treated at $700^{\circ}C$. The capacitance of specimens decreases with frequency.

• Proceedings of the KIEE Conference
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• 2007.04c
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• pp.29-33
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• 2007

In this paper, time-varying parameter of passive telemetry RF sensor system is estimated using RLS(Rescursive $\leq$* Square) algorithm. In order to overcome the problems such as power limits and complication that general RF sensor system including IC chip has, the principle of inductive coupling is applied to model sensor system The model parameter is rearranged for applying RLS algorithm based on mathematical model to the derived model using inductive coupling principle. Time variant parameter of rearranged model is estimated using forgetting factor, and in case measured data is contaminated by noise and modelling error, the performance of RLS algorithm characterized by the convergence of squared error sum is verified by simulation.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1014-1016
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• 1998

A capacitance-type humidity sensor using porous silicon layer is developed. The unique property of this sensor is a structure which has electrodes on the surface of the wafer like a general IC device. To do this. the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. The measurement of humidity-sensing ability was done for two type of sensors using porous silicon layer formed in 25 and 35% HF solutions, respectively. As the result, the former sensors showed larger value and variation of capacitance for the relative humidity.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.287-291
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• 2004

A capacitive type humidity sensor has been fabricated using a polyimide film without hydrophobic elements and its characteristics has been evaluated for hermeticity measurement of micro packages. For a highly sensitive humidity sensor, a polyimide film without hydrophobic elements has been synthesized and used instead of using a commercial one in which 7 group elements such as fluorine or chlorine are included. Sensitivity, stability and hysteresis has been performed to characterize the fabricated sensors. The sensitivity defined as normalized percent capacitance change was 0.3751%RH and hysteresis was 0.77% in the range of 10%RH to 90%RH. Maximum deviation from the average capacitance measured for 120 minutes at 50%RH was 0.25%. The proposed humidity sensor can be used for hermeticity measurement of micro packages.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.55 no.1
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• pp.26-30
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• 2006

For the purpose of developing capacitive humidity sensor having interdigital electrodes, interdigital electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thickness. For the development of ASIC, switched capacitor signal processing circuits for capacitive humidity sensor were designed and simulated by Cadence using $0.25{\mu}m$ CMOS process parameters. The signal processing circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control. The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is $0.4%R.H./^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of $3%R.H.{\sim}98%R.H.$. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigital electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc.