• Current Industrial and Technological Trends in Aerospace
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• v.7 no.1
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• pp.68-78
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• 2009

In this paper, the electrostatic charging and discharging mechanism, and its effects in space plasma environment are reviewed and the system design control documents, ESD analysis tools and modelling techniques, and the SPIS program in Europe are introduced. A design of the satellite system against the electrostatic discharge (ESD) effects in space plasma environments is carefully taken into account at the early stage of development. In a view of the space system design, it really depended on the mission of system, electrical and mechanical configuration, system operation, and orbit condition. Behavior of the electrons and the ions in those environments may be occurred the sever problem to the satellite operation. So it is carefully understood for implementation of the satellite system. By this reason, the space environments and its effects have been comprehensively studied in U.S.A and Europe.

• Aerospace Engineering and Technology
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• v.7 no.2
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• pp.67-75
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• 2008

The electrostatic charging/discharging mechanism and its effects, and the system design considerations in the space plasma environment are studied in this paper. The electrostatic discharge (ESD) effects are carefully taken into account for a design of the satellite system at the early stage of the development. Generally, the electrical design requirements are specified to protect the satellite system from the ESD effects in the electromagnetic compatibility specifications. Those requirements are included the grounding, the bonding, the shielding, the conductive coating, the electric interfacing and so on. The space charging is caused by the increasing of the voltage difference between the each locations on the satellite surface. If the space charging is continued up to threshold, it may be occurred the system failure. This phenomenon is depended on the mission of system, electrical and mechanical configuration, system operation, and orbit condition. Therefore the related requirements are properly tailored and concentrated into the safety design.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.5-11
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• 2022

Despite the increasing importance of manufacturing and application R&D for ultrapure deionized water and electrolyzed ion water, various and systematic studies have not been conducted until now. In this study, the electrostatic discharge (ESD) behavior of electrolyzed ion water using a proton exchange membrane(PEM) was evaluated according to the type, flow rate, and bubble of electrolyzed ion water. In addition, by observing that Oxidation Reduction Potential (ORP) value returns to the unique value of electrolyzed ion water after electrostatic discharge, the possibility of two types of ions participating in electrostatic discharge ((H₂O)_n⁺ (assumed)) and ions for maintaining the characteristics of electrolyzed water could be inferred. In order to confirm the chemical structure and characteristics of the cations, in-depth research related to water molecular orbital energy or band gap should be followed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.109-113
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• 2005

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.