• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.42-51
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• 1981

Boron was predeposited into p (100) Si wafer at 94$0^{\circ}C$ for 60minutes to make the back surface field. High tempreature diffusion process at 1145$^{\circ}C$ for 3 hours was immediately followed without removing boron glass to obtain high surface concentration Back boron was annealed at 110$0^{\circ}C$ for 40minutes after boron glass was removed. N+ layer was formed by predepositing with POCI3 source at 90$0^{\circ}C$ for 7~15 minutes and annealed at 80$0^{\circ}C$ for 60min1es under dry Of ambient. The triple metal layers were made by evaporating Ti, Pd, Ag in that order onto front and back of diffused wafer to form the front grid and back electrode respectively. Silver was electroplated on front and back to increase the metal thickness form 1~2$\mu$m to 3~4$\mu$m and the metal electrodes are alloyed in N2 /H2 ambient at 55$0^{\circ}C$ and followed by silicon nitride antireflection film deposition process. Under artificial illumination of 100mW/$\textrm{cm}^2$ fabricated N+PP+ cells showed typically the open circuit voltage of 0.59V and short circuit current of 103 mA with fill factor of 0.80 from the whole cell area of 3.36$\textrm{cm}^2$. These numbers can be used to get the actual total area(active area) conversion efficiency of 14.4%(16.2%) which has been improved from the provious N+P cell with 11% total area efficiency by adding P+ back.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.67-72
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• 1992

The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Journal of Adhesion and Interface
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• v.20 no.1
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• pp.1-8
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• 2019

Fabrication of monolayer is important method for enhancing physical and chemical characteristics such as light shielding and antireflection while maintaining thin film properties. In previous studies, monolayers were fabricated by various methods on small substrates, but processes were complicated and difficult to form monolayers with large area. We used rod coating equipment with a small amount of coating liquid to form a HCP (hexagonal closed packing) coating of PMMA beads on PET(poly(ethylene terephthalate)) substrate with $20cm{\times}20cm$ size. We observed that changes in morphologies of monolayers by using the solvents with different boiling points and vapor pressures, by adapting surfactants on particles and by applying plasma treatment on substrates. The coverage was increased by 20% by optimizing the coating conditions including meniscus of beads, control of the attraction - repulsion forces and surface energy. This result can potentially be applied to optical films and sensors because it is possible to make a uniform and large-scale monolayer in a simple and rapid manner when it is compared to the methods in previous studies.

• Advances in pediatric surgery
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• v.8 no.2
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• pp.143-155
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• 2002

A survey on biliary atresia was made among 26 members of the Korean Association of Pediatric Surgeons. The members were required to complete a questionnaire and a case registration form for each patient during the twentyone-year period of 1980-2000. Three hundred and eighty patients were registered from 18 institutions. The average number of patients per surgeon was one to two every year. The male to female ratio was 1:1.3. The age of patients on diagnosis with biliary atresia was on average $65.4{\pm} 36.2$ days old. The national distribution was 32.8% in Seoul, 25.3% in Gyoungki-Do, 21.6% in Gyoungsang-Do, 9.27% in Choongchung-Do, etc. in order. The most common clinical presentation was jaundice (98.4%) and change of stool color (86.2%) was second. Two hundred eighty (74.7%) of 375 patients were operated by 80 days of age. Three hundred thirty six (9 1.9%) of 366 patients were operated on by the original Kasai procedure, and 305 (84.3%) of 362 patients were observed by bile-drainage postoperatively. The overall postoperative complication rate was 18.5% and the overall postoperative mortality rate was 6.8%. The associated anomalies were observed in 72 cases (22.5%). One hundred ninty five (64.7%) of 302 patients have been alive in follow-up and 49 (25.1%) have survived over 5 years without problem after operation. Ascending cholangitis, varices and ascites affected survival significantly, and the important long-term prognostic factor was the occurrence of complications.