• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.309-313
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• 2021

Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiO_x thin film through a solution process. The electrical characteristics of the NiO_x thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiO_x thin films. The optimized NiO_x exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiO_x could be a potential solution which can provide robustness to conventional organic semiconductors.

• Applied Chemistry for Engineering
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• v.35 no.2
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• pp.100-106
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• 2024

To improve charge transfer and surface contact between NiO and perovskite, sol-gel derived NiO is modified with [2-(9H-car-bazol-9-yl)ethyl] phosphonic acid (2PACz) in p-i-n structured perovskite solar cells (PeSCs). The phosphonic acid head group in the 2PACz can bind to the hydroxyl groups on the surface of NiO by a condensation reaction, which results in a better-matched energy level with the valence band of perovskite layers, reducing nonradiative recombination and energy loss. Furthermore, the formation of pin-hole free perovskite films is observed in the 2PACz modified NiO system. Consequently, the combination of sol-gel processed NiO with optimal 2PACz exhibits a higher efficiency of 17.08% and superior stability under ambient air conditions without any encapsulation, compared to a bare NiO based device showing 13.69%.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.59-63
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• 2017

The n-type GaN semiconductor has excellent properties as a photoelectrode, but it has disadvantage that its reliability is deteriorated due to the photocorrosion because the oxygen reaction occurs on the surface. For this reason, there are fundamental attempts to avoid photocorrosion reaction of GaN surfaces by using the p-type GaN as a photoelectrode where hydrogen generation reaction occurs on the surface. However, p-type GaN has a problem of low efficiency because of its high resistivity and low hole mobility. In this study, we try to improve the photocurrent efficiency by activation process for the p-type GaN. The p-type GaN was annealed for 1 min. at $500^{\circ}C$ in $N_2$ atmosphere. Hall effect measurement system was used for the electrical properties and potentiostat (PARSTAT4000) was used to measure the photoelectrochemical (PEC) characteristics. Consequently, the photocurrent density was improved more than 1.5 times by improving the activation process for the p-type GaN. Also, its reliability was maintained for 3 hours.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.3 s.345
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• pp.1-8
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• 2006

In this paper, reliability (HCI, NBTI) and device performance of nano-scale CMOSFETs with different channel stress were investigated. It was shown that NMOS and PMOS performances were improved by tensile and compressive stress, respectively, as well known. It is shown that improved device performance is attributed to the increased mobility of electrons or holes in the channel region. However, reliability characteristics showed different dependence on the channel stress. Both of NMOS and PMOS showed improved hot carrier lifetime for compressive channel stress. NBTI of PMOS also showed improvement for compressive stress. It is shown that $N_{it}$ generation at the interface of $Si/SiO_2$ has a great effect on the reliability. It is also shown that generation of positive fixed charge has an effect in the NBTI. Therefore, reliability as well as device performance should be considered in developing strained-silicon MOSFET.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.107-112
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• 2020

Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe₂ one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe₂ was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe₂-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×10⁶, and 192 mV/decade of subthreshold swing.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.195-198
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• 2008

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing. In order to form polymeric film as a passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. In order to investigate by compared with different passivation layer, the other OTFTs is fabricated to passivation by Polyvinylalcohol using spincoating. We can see that two different ways of passivation layer affect electric characteristic of OTFTs. The initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.24cm^2/Vs$, -3V, and $10^6$, respectively. Then after polyimide passivation layer, field effect mobility change from $0.24cm^2/Vs$ to $0.26cm^2/Vs$, threshold voltage from -3V to 1V and on-off current ratio from $10^6$ to $10^6$, respectively. In the case of polyvinylalcohol passivation, the initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.13cm^2/Vs$, 0V, and $10^6$, respectively. Then after polyvinylalcohol passivation layer, field effect mobility changes from $0.13cm^2/Vs$ to $0.13cm^2/Vs$, threshold voltage from 0V to 2V, and on-off current ratio from $10^6$ to $10^5$, respectively.

• Applied Chemistry for Engineering
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• v.29 no.2
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• pp.191-195
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• 2018

In this study, the influence of microporous structures of activated carbon fibers (ACFs) on dimethyl methylphosphonate (DMMP) gas sensing properties as a nerve agent simulant was investigated. The pore structure was given to carbon fibers by chemical activation process, and an electrode was fabricated for gas sensors by using these fibers. The PAN based ACF electrode, which is an N-type semiconductor, received electrons from a reducing gas such as DMMP, and then electrical resistance of its electrode finally decreased because of the reduced density of electron holes. The sensitivity of the fabricated DMMP gas sensor increased from 1.7% to 5.1% as the micropore volume increased. It is attributed that as micropores were formed for adsorbing DMMP whose molecular size was 0.57 nm, electron transfer between DMMP and ACF was facilitated. In conclusion, it is considered that the appropriate pore structure control of ACFs plays an important role in fabricating the DMMP gas sensor with a high sensitivity.

• Journal of the Korean earth science society
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• v.21 no.5
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• pp.563-582
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• 2000

Two Cretaceous(80-90 Ma) non-marine sedimentary basins, Namyang and Tando Basins, are distributed in the Namyang area, Hwaseonggun and in the Tando area, Ansanshi, Kyungki Province, Korea. The Namyang and Tando Basins are composed of 10 facies, which are pooped into 5 facies associations(FA). FA I consists of massive conglomerate facies, normally graded conglomerate facies and reversely graded conglomerate facies, which is interpreted to have been formed by laminated sandstone facies, massive conglomerate facies(channelized), which is thought to have been formed by sheet flow, stream flow and suspension sedimentation in an alluvial/braided plain environment. FA III consists of massive mudstone(pebbly) facies, laminated mudstone facies, massive sandstone facies and is interbedded by channel-fill conglomerate. It is interpreted to have been deposited by suspension settling during flooding and channel-fill deposition in a floodplain environment. FA IV consists of massive conglomerate facies, normally graded conglomerate facies, massive sandstone facies, normally graded sandstone facies, and laminated sandstone facies and is interbedded with mudstone facies. It is thought to have been deposited by debris flow and turbidity current in a fan-delta environment. FA V consists of massive mudstone facies, laminated mudstone facies, laminated sandstone facies and is interbedded by massive conglomerate bed. It is thought to have been formed by suspension sedimentation and low-density turbidity current in a lake. In the Namyang Basin FA I is distributed in the eastern and southern margin of the basin, FA II in the middle part of the basin as north-south tending band. and FA III in the western part. In the Tando Basin FA II is distributed in the middle part of eastern margin and in the northwestern margin, FA IV in the southwestern part, and FA V in the central part. Correlation of the facies associations shows that FA I and II in the Namyang Basin are distributed in the lower to middle part of stratigraphic sequence and FA III in the upper part of the sequence whereas FA II and IV in the Tando Basin are in the lower to middle part and FA V in the upper part of the sequence. These patterns of facies associations distribution suggest that the Namyang Basin was developed as an alluvial fan and alluvial/braided plain at first and then evolved into a floodplain whereas the Tando Basin was developed as a fan-delta and alluvial/braided plain at first and then evolved into a lake environment.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).