• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.2
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• pp.155-164
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• 2014

Carbon-fiber-reinforced plastic (CFRP) composites are increasingly being used in a variety of industry applications, such as aircraft, automobiles, and ships because of their high specific stiffness and high specific strength. Aircraft are exposed to high temperatures and high humidity for a long duration during flights. CFRP materials of the aircraft can absorb water, which could decrease the adhesion strength of these materials and cause their volumes to change with variation in internal stress. Therefore, it is necessary to estimate the characteristics of CFRP composites under actual conditions from the viewpoint of aircraft safety. In this study air-coupled ultrasonic testing (ACUT) was applied to the evaluation of water absorption properties of CFRP composites. CFRP specimens were fabricated and immersed in distilled water at $75^{\circ}C$ for 30, 60, and 120 days, after which their ultrasonic images were obtained by ACUT. The water absorption properties were determined by quantitatively analyzing the changes in ultrasonic signals. Further, shear strength was applied to the specimens to verify the changes in their mechanical properties for water absorption.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.147-153
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• 2008

It has been well-known that the Fe/GaAs heterostructure has a small lattice mismatch of 1.4% between Fe and GaAs, and the Fe layer is grown epitaxially on the the GaAs substrate. There are rich physics are observed in the GaAs/Fe interface, and the spininjection is actively studied due to its potential applications for spintronics devices. We fabricated Fe wedge layer in the thickness range $0{\sim}3.4$ nm on the GaAs(100) surface with 5-nm thick Au capping layer. The magnetic anisotropy of the Fe/GaAs system was investigated by employing Brillouin light scattering(BLS) measurements in this study. The spin wave excitation of Fe layer was studied as the function of intensity and the in-plane angle of external magnetic field, and thickness of Fe layer. Also these various dependences were analyzed with analytic expression of spin wave surface mode in order to determine the magnetic anisotropies. It has been found that the GaAs/Fe/Au system has additional uniaxial magnetic anisotropy, while the bulk Fe has biaxial anisotropy. The uniaxial anisotropy shows increasing dependency respected to decreasing thickness of Fe layer while biaxial anisotropy is reduced with Fe film thickness. This result allows the analysis that the uniaxial anisotropy is originated from interface between GaAs surface and Fe layer.

• Korean Journal of Metals and Materials
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• v.50 no.4
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• pp.316-323
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• 2012

The aim of this study is to investigate the effect of post heat treatment on bonding properties of roll cladded Ti/MS/Ti materials. First grade Ti sheets and SPCC mild steel sheets were prepared and then Ti/MS/Ti clad materials were fabricated by a cold rolling and post heat treatment process. Microstructure and point analysis of the Ti/MS interfaces were performed using the SEM and EDX Analyser. Diffusion bonding was observed at the interfaces of Ti/MS. The thickness of the diffusion layer increased with post heat treatment temperature and the diffusion layer was verified as having $({\epsilon}+{\zeta})+({\zeta}+{\beta}-Ti)$ intermetallic compounds at $700^{\circ}C$ and an $({\zeta}+{\beta}-Ti)$ intermetallic compound at $800^{\circ}C$, respectively. The micro Knoop hardness of mild steel decreased with post heat treatment temperature; however, those of Ti decreased at a range of $500{\sim}600^{\circ}C$ and showed a uniform value until $800^{\circ}C$ and then increased rapidly up to $900^{\circ}C$. The micro Knoop hardness value of the diffusion layer increased up to $700^{\circ}C$ and then saturated with post heat treatment. A T-type peel test was used to estimate the bonding forces of Ti/Mild steel interfaces. The bonding forces decreased up to $800^{\circ}C$ and then increased slightly with post heat treatment. The optimized temperature ranges for post heat treatment were $500{\sim}600^{\circ}C$ to obtain the proper formability for an additional plastic deformation process.

• Journal of the korean academy of Pediatric Dentistry
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• v.33 no.2
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• pp.221-232
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• 2006

The purpose of this study was to investigate the effect of step-curing mode on polymerization shrinkage and contraction of composite resin restoration. Class I cavities were prepared on the extracted human premolars. The cavities were ailed with Filtek $Z-250^{TM}$ (hybrid resin, 3M ESPE, USA) and Filtek $flow^{TM}$ (flowable resin, 3M ESPE, USA) and cured with one of the following irradiation modes; Halogen 40sec with continuous curing, LED 10sec with continuous curing, and LED 13sec with step-curing. Contraction stress was measured with strain gauge which was connected to TML $Datalogger^{TM}$ (TDS-102, SOKKI, Japan) and resin-dentin interfaces were observed by scanning electron microscope. The results of present study can be summarized as follows : 1. Composite resin restoration showed transient expansion just after irradiation of curing light. Contraction stress was increased rapidly at the early phase of polymerization and reduced slowly as time elapsed (P<0.05) 2. $Filtek\;flow^{TM}$ showed lower contraction stress than Filtek $Z-250^{TM}$ regardless of curing modes. 3. LED step-curing mode showed lowest contraction stress in Filtek $Z-250^{TM}$ compared with other curing modes(P<0.05). 4. LED step-curing mode showed lowest contraction stress in $Filtek\;flow^{TM}$ compared with other curing modes(P<0.05), but difference in contraction stress was not so greate as in $Filtek\;Z-250^{TM}$. 5. Polymerization of composite resin by LED light with step-curing mode and halogen light with continuous ode resulted in better marginal sealing than LED light with continuous mode.

• Journal of the Korean Society of Hazard Mitigation
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• v.2 no.1 s.4
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• pp.135-141
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• 2002

Both non-linear damping values of the deep and shallow crustal materials and seismic source parameters are found from the observed near-field seismic ground motions at the South-eastern Korean Peninsula. The non-linear numerical algorithm applied in this study is Levenberg-Marquadet method. All the 25 sets of horizontal ground motions (east-west and north-south components at each seismic station) from 3 events (micro to macro scale) were used for the analysis of damping values and source parameters. The non-linear damping values of the deep and shallow crustal materials were found to be more similar to those of the region of the Western United States. The seismic source parameters found from this study also showed that the resultant stress drop values are relatively low compared to those of the Western United Sates. Consequently, comparisons of the various seismic parameters from this study and those of the United States Seismo-tectonic data suggest that the seismo-tectonic characteristics of the South eastern Korean Peninsula is more similar to those of the Western U.S.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.2
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• pp.94-101
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• 1989

Transport properties of 2DEG at AlGaAs/GaAs interface such as average electron energy, flight distance, each valley occupancy ratio, average electron velocity for various fields are investigated by MONTE-CARLO method. As the electric field increases, more electrons transit drastically from (000) valley to (000) upper valley. This phenomenon shows the nonstationary effect such as velocity overshoot. The duration of the transient decreases from about 1.4 psec for electric field E = 7KV/cm to about 0.7 psec for 12KV/cm. The average electron velocity during transient transport in 2DEG is about 8 times the steady-state velocity for E = 12KV/cm at room temperature. In comparison with bulk GaAs the peak velocity in the 2DEG is higher than that in even pure bulk GaAs at electric field E = 7 KV/cm. On the basis of the fact that the electrons in the 2DEG have larger peak velocity and shorter transient time of velocity than those in the bulk GaAs, it is suggested that the device with 2DEG may obtain higher mobility than that with bulk GaAs.