• Journal of the Korean Society of Manufacturing Process Engineers
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• v.8 no.2
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• pp.76-82
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• 2009

In this papers, Study on the Bonding property and Strength Evaluation in Bonding interface Joints of Dissimilar material using DOE. We found optimal condition that uses experimental design method (Response Surface Analysis, DOE) used temperature, pressure, time on experiment factor. And we could get bonding condition and strength that break and crack do not happen in mechanical processing about united dissimilar material. And progress 3 point bending tests and verified result.

• Journal of Welding and Joining
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• v.12 no.3
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• pp.48-55
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• 1994

In this experiment, to find optimum brazing conditions for Cu/Stainless Steel brazing using filler metals of Ag-Cu-Zn-Cd system, first of all spreading ratio was tested on 304 stainless Steel and low carbon steel. And then shear test of brazed joint was executed. As the result of that, the shear strengths of brazed joints were the range of 60-90 MPa. Through microstructure analysis for brazed interface layer, We found as follows. Firstly interface layer increased as time increased. Secondly continuous layer of Ag-Cd compound was observed along the side of stainless steel. Also by means of EDS analysis for fracture surface, ductile fracture was occurred and precipitates on the fracture surface were found to include Cr, Mn, Si in Ag-rich phase.

• Proceedings of the KAIS Fall Conference
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• 2011.05a
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• pp.196-197
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• 2011

실리콘 태양전지의 pn 접합 계면특성을 조사하기 위해서 p형 실리콘 기판 위에 전기로를 이용한 $POCl_3$ 공정을 통하여 n형의 불순물을 주입하여 pn접합을 만들었다. n형 불순물의 확산되어 들어가는 공정시간이 길고 공정온도가 높을수록 면저항은 줄어들었다. n형 불순물의 주입이 많아질수록 pn 접합 계면에서의 전자친화도가 줄어들면서 면저항은 감소되었다고 할 수 있다. n형 반도체의 페르미레벨이 높아지면서 공핍층도 생기지만 n형 불순물이 많아지면서 공핍층의 폭은 점점 좁아지고 쇼키 장벽의 높이도 낮아지면서 자유전자와 홀 쌍의 이동이 쉽게 이루어지게 되었다. n형의 불순물 확산공정시간이 긴 태양전지 셀에서 F.F. 계수가 높게 나타났으며, 효율도 높게 나타났다.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.3 s.96
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• pp.78-83
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• 1999

The bonding interface is dependent on the properties of surfaces prior to SDB(silicon wafer direct bonding). In this paper, we prepared silicon surfaces in several chemical solutions, and annealed bonding wafers which were combined with thermally oxidized wafers and bare silicon wafers in the temperature range of $600{\times}1000^{\circ}C$. After bonding, the bonding interface is investigated by an infrared(IR) topography system which uses the penetrability of infrared through silicon wafer. Using this procedure, we observed intrinsic bubbles at elevated temperatures. So, we verified that these bubbles are related to cleaning and drying conditions, and the interface oxides on silicon wafer reduce the formation of intrinsic bubbles.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.30 no.8
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• pp.65-70
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• 2002

The brazing of duplex stainless steels which is an essential process for rocket engine manufacturing has been investigated on bonding phenomena and shear strength. The UNS32550 was used for base metal, and the MBF-50 was used for insert metal. Brazing was carried out under the various conditions (brazing temperature : 1473K, 1498K, holding time : 0, 0.3, 0.9, 1.8 ks). There were various phases in the joint because of reaction between liquid insert metal and base metal, In the early stage, BN is formed in the bonded interlayer and base metal near the bonded layer. Cr nitride is formed in the bonded interlayer. The amount of BN and Cr nitride decrease with the increase of holding time. Superior shear strength of 550MPa is obtained by restraining the formation of nitride.

• Proceedings of the KWS Conference
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• 1999.10a
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• pp.273-276
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• 1999

• Proceedings of the KWS Conference
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• 2003.11a
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• pp.72-73
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• 2003

• Proceedings of the KWS Conference
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• 2003.11a
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• pp.89-90
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• 2003

• Proceedings of the KWS Conference
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• 2002.05a
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• pp.263-265
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• 2002

• Proceedings of the KWS Conference
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• 2002.05a
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• pp.260-262
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• 2002