• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.3
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• pp.14-19
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• 2008

In the semiconductor IC(Integrated Circuit) package, the top surface of silicon chip is directly attached to the area of the leadframe with a double-sided adhesive layer, in which the base layer have the upper adhesive layer and the lower adhesive layer. The IC package structure has been known to encounter a thermo-mechanical failure mode such as delamination. This failure mode is due to the residual stress on the adhesive surface of silicon chip and leadframe in the curing-cooling process. The induced thermal stress in the curing process has an influence on the cooling residual stress on the silicon chip and leadframe. In this paper, for the minimization of the chip surface damage, the adhesive topologies on the silicon chip are studied through the finite element analysis(FEA).

• Journal of Adhesion and Interface
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• v.14 no.2
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• pp.57-67
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• 2013

The incompletion of TIR (Total Internal Reflection) in FTIR (Frustrated Total Internal Reflection) touch screen has been investigated as follows. Assuming a 3 layer thin film of medium1 ($n_1$)-medium2 ($n_2$)-medium3 ($n_3$) with refraction indices of $n_1=n_3{\neq}n_2$, it was theoretically proven that FTIR or OT (ordinary transmission) phenomena might happen through medium2 from medium1 to medium3 relying on relative difference in $n_1(=n_3)$ and $n_2$, and that the formulae for FTIR and OT could be transformed into each other depending on the number state (imaginary or real) of the light wave phase. In parallel to the theoretical analysis, the incompletion of TIR in acrylate due to external contacts was also elucidated from the experimental and phenomenological viewpoints. On the basis of this considerate work, we explained how to improve the touching performance for better FTIR touch screen.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.29-37
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• 2021

The effect of Ar/N₂ two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N₂ 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N₂ 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m² and 2.33±0.67 J/m², respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.