• Electrical & Electronic Materials
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• v.8 no.3
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• pp.267-271
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• 1995

The electrical properties of (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ ceramics were studied. Specimens were prepared by the conventional mixed oxide method, and fired between 1300[.deg. C] - 1375[.deg. C], for 2[hr.]. The electrical and structural preperties of specimens were investigated with sintering temperature. Increasing the sintering temperature from 1300[.deg. C] to 1375[.deg. C], average grain size was increased from 2.61[.mu.m] to 4.53[.mu.m]. (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ specimen sintered at 1350[.deg. C] for two hours showed good dielectric constant(2147) and dielectric loss(1.7[%]) properties at 1[khz]. Sintered density and breakdown field strength were the highest value of 5.75[g/c $m^{3}$], 20[kV/cm], respectively. Dielectric properties with applied voltage were independent of the sintering temperature.temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.1003-1008
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• 2002

In this paper, the estimation of lifetime with the various conditions of the interface between toughened epoxy and rubber which are consisting materials of underground power delivery system has been studied. After the measurement of the short time AC interfacial breakdown strength on macro interfaces at room temperature, the breakdown time at several voltages were measured under the constant voltages lower than the short time breakdown voltage. The long time breakdown voltage was calculated by using Inverse Power Law. Two types of interfaces was studied. One was the interface between toughened epoxy and EPDM(Ethylene Prorylene Diene Terpolymer). The other was the interface between toughened epoxy and silicon rubber. Interfacial pressure and roughness of interfaces was determined through the characteristic of short time AC interfacial breakdown strength. Oil condition was no oiled, low viscosity oiled and high viscosity oiled. High viscosity oiled interface between Toughened epoxy and silicon rubber had the best lifetime exponent, 20.69. and the breakdown voltage of this interface after 30 years was evaluated 19.27㎸.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1744-1746
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• 2001

In this paper, we investigated the breakdown characteristics of Ar, Kr and $N_2$ gas in pure states with pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields, and the measured values are compared with those in Ar/$N_2$ gas mixtures. From these results, the breakdown voltages of $N_2$ gas in uniform field were increased about 4.8 and 4.4 times than those of Ar and Kr gas, respectively. Breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of $N_2$ gas. Breakdown voltages of Ar(70%)/$N_2$(30%) gas mixtures in the pressure of 101.3[kPa] (gap length : 3[mm]) were increased 1.9 times than those of pure Ar gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.92-92
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• 2010

In this paper, the test is performed on MgO, which is used as a filler in epoxy additives, respectively (0, 1.0, 3.0, 5.0, 7.0, 10 [wt%]) for HVDC(high voltage direct current) submarine cable insulating material to improve electrical properties of epoxy resin in high temperature. The breakdown strength due to increasing amount of filler increased to 5.0 [wt%] by the effects of the Coulomb blockade. However, it is confirmed that strength of dielectric breakdown decreased because the filler functioned as impurities and affected the breakdown when filler additive exceeded by 5.0 [wt%] or more. We have found that the highest dielectric breakdown strength of specimen added 5.0 wt% at $25^{\circ}C$, and is more increased approximately 13.7 [%] than virgin specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.48-48
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• 2010

In this paper, we have investigated temperature dependence of dielectric breakdown voltage at epoxy with added nano-filler(MgO), which is used as a filler of epoxy additives for HVDC(high voltage direct current) submarine cable insulating material with high thermal conductivity and restraining tree to improve electrical properties of epoxy resin in high temperature region. In order to find dispersion of the specimen, the cross sectional area of nano-composite material is observed by using the SEM(Scanning Electron Microscope) and it is conformed that each specimen is evenly distributed without the cohesion. As a result, it is confirmed that the strength of breakdown of all specimen at 50 [$^{\circ}C$] decreased more than that of the dielectric breakdown strength at room temperature. When temperature increases from 50 [$^{\circ}C$] to 100 [$^{\circ}C$], we have confirmed that breakdown strength of virgin specimen decreases, but specimens with added MgO show constant dielectric breakdown strength.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.1
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• pp.26-32
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• 1979

Dry oxidation and wet oxidation processes of silicon have been examined experimentally. The oxidation temperatures were 1.10$0^{\circ}C$, 1.15$0^{\circ}C$, and 1.200 $^{\circ}C$, and oxygen flow rate was changed from 0.2 liter/min to 2.8 liter/min. From the experimental measurements, oxidation temperaturel time and oxygen flow rate have been tabutated for oxide layers 0.1$\mu$ - 1.0$\mu$ in thickness. The quality of the grown oxide layer has been investigated In terms of the dielectric constant, breakdown voltage, fixed surface charge densify (Qss/q) and mobile charge density (Q /q). From these measurements, it is concluded that the quality of the oxide layer is sufficient to expect the normal operation of MOS transistors.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.25-34
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• 1981

Aluminum anodization method has been investigated for fabricating charge coupled device(CCD) with two-level aluminum gate structure. Al2O3 films were formed to a thickness of 400-500A, by anodizing aluminum with 30-35V of anode voltage for 2 hours using 2 % ammonium tartrate solution as an electrolyte. Breakdown voltage of these films were about 30 volts. Using above mentioned Al2O3 film as an insulator between two aluminum electrodes, CCD transversal low pass filter has been fabricated. CCD transversal low pass filter with 17 tap coefficients has shown 22 dB stop-band attenuation. The operating clock frequency range of the fabricated device was from 3 KHz to 100 KHz.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1469-1471
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• 1996

In this paper, We intended to evaluate the characteristics of XLPE/EPDM interface which exists in the cable joint. The fault of practical cable was mainly occurred in this interface. Thus we looked into the electrical characteristics through the conduction current and the breakdown test. Through the experiment, we obtained the result that the conduction current in this interface flowed less than other dielectric materials, that the breakdown strength was higher and that the pressure dependance of the breakdown strength was higher.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1498-1501
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• 1996

To evaluate insulating properties of polyimide thin film on high temperature over $100\;^{\circ}C$, polyimide film were prepared by electrophoretic deposition onto metal surface from nonaqueous emulsion. The emulsion is made by adding a solution of the resin to a precipitant, which is an organic liquid compeltely miscible with the solvent of the organic resin solution, but which does not dissolve the resin. The polyimide film obtained by annealing shows good insulation properties of 5.8 MV/cm at elevated temperature and breakdown strength of the film reveals thickness dependence.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.430-432
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• 1995

In this paper, the electron beam with 1[Mrad], 2[Mrad], 4[Mrad], 8[Mrad] and 24[Mrad] is irradiated for specimen experiments on physical properties which is investigated by FTIR, and dielectric breakdown among the electrical characteristics of specimen are carried out. For the dielectric breakdown experiment, external 60 [Hz] AC voltage is applied to specimen with the rising voltage of 3[kV/cm] until dielectric breakdown occured. We made a breakdown experiment under the temperature condition of 50[$^{\circ}C$], 100[$^{\circ}C$], 150[$^{\circ}C$] in the silicone oils of dynamic viscosity of 100[cSt].