• Prospectives of Industrial Chemistry
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• v.22 no.2
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• pp.13-24
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• 2019

최근 짧아진 전자 기기의 수명에 따른 전자 폐기물이 환경에 미치는 부정적인 영향이 세계적인 문제점으로 주목받고 있다. 이와 같은 문제를 해결하기 위하여 전자 제품에 사용되는 생분해성, 안정성 및 무독성이 입증된 유기 재료 개발에 대한 다양한 방법이 검토되고 있으며 이러한 유기 재료의 특징들은 생체 전자 기기에도 유용할 수 있다. 따라서 본 기고문에서는 전자 폐기물로부터 야기되는 여러 문제를 해결하기 위해 생분해성, 안정성 및 무독성의 특성을 갖는 친환경 전자 기기 소재기술 개발 동향에 대해 알아보고자 한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.

• Journal of Korean Electronics
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• v.4 no.9
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• pp.23-27
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• 1984

• Electrical & Electronic Materials
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• v.29 no.6
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• pp.12-21
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• 2016

• Electrical & Electronic Materials
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• v.29 no.6
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• pp.28-38
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• 2016

• Electrical & Electronic Materials
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• v.22 no.8
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• pp.6-10
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• 2009

• Electrical & Electronic Materials
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• v.32 no.5
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• pp.8-17
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• 2019

• Electrical & Electronic Materials
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• v.35 no.6
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• pp.20-29
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• 2022

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.195-201
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• 2024

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

• Electrical & Electronic Materials
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• v.35 no.6
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• pp.10-19
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• 2022