• Title/Summary/Keyword: 전자빔 공정

Search Result 169, Processing Time 0.087 seconds

Process Characteristics and Applications of High Density Plasma Assisted Sputtering System (HiPASS)

  • Yang, Won-Gyun;Kim, Gi-Taek;Lee, Seung-Hun;Kim, Do-Geun;Kim, Jong-Guk
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.95-95
    • /
    • 2013
  • 박막 공정 기술은 반도체 및 디스플레이뿐만 아니라 대부분의 전자소자에 적용되는 매우 중요한 기술이다. 그 중, 마그네트론 스퍼터링 공정은 플라즈마를 이용하여 금속 및 세라믹 등의 벌크 물질을 박막으로 증착 가능한 가장 널리 사용되는 방법 중의 하나이다. 하지만, Fe, Co, Ni 같은 강자성체 재료는 공정이 불가능하며, 스퍼터링 타겟 효율이 40% 이하이고, 제한적인 방전압력 범위 및 전류 상승에 의한 높은 전압 인가 제한이 있다는 단점이 있다. 본 연구에서 사용된 고밀도 플라즈마 소스를 적용한 고효율 스퍼터링 시스템은 할로우 음극을 이용한 원거리에서 고밀도 플라즈마를 생성하여 전자석 코일을 통해 자석이 없는 음극으로 이온을 수송시켜 스퍼터링을 일으킨다. 따라서 강자성체 재료의 스퍼터링이 가능하며, 90% 이상의 타겟 사용 효율 구현 및 기존 마그네트론 스퍼터링 대비 고속 증착이 가능하다. 또한, $10^{-4}$ Torr 압력영역에서 방전 및 스퍼터링이 가능하다. 타겟 이온 전류를 타겟 인가 전압과 관계없이 0~4 A까지, 타겟 이온 전류와 상관없이 타겟 인가 전압을 70~1,000 V 이상까지 독립적으로 제어가능하다. 또한 TiN과 같은 질소 반응성 공정에서 반응성 가스인 질소를 40%까지 넣어도 타겟에 수송되는 이온의 양에 영향이 없다. 할로우 음극 방전 전류 40 A에서 발생된 플라즈마의 이온에너지 분포는 55 eV에서 가우시안 분포를 보였으며, 플라즈마 포텐셜인 sheath drop은 74 V 였다. OES를 통한 광학적 진단 결과, 전자석에 의한 이온빔 초점에 따라 플라즈마 이온화율을 1.8배까지 증가시킬 수 있으며, 할로우 음극 방전 전류가 60~100 A로 증가하면서 플라즈마 이온화율을 6배까지 증가 가능하다. 또한, 타겟 이온 전류와 관계없이 타겟 인가 전압을 300~800 V로 증가시킴에 따라 Ar 이온 밀도의 경우 1.4배 증가, Ti 이온 밀도의 경우 2.2배 증가시킬 수 있었으며, TiN의 경우 증착 속도도 16~44 nm/min으로 제어가 가능하다.

  • PDF

Fabrication of a 1*4 Polymeric Optical Power Divider Based on the Multi-Mode Interference Effect (다중모드간섭 현상에 입각한 1*4 폴리머 광파워분할기의 제작)

  • 김기홍;송현채;오태원;신상영;이운영
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.11
    • /
    • pp.85-90
    • /
    • 1998
  • A 1 4 polymeric optical power divider based on the multimode interference effect is designed and fabricated. The two dimensional finite difference beam propagation method has been utilized in designing the device. Polymers used for the core layer and the cladding layer are Cyclotene-3022 and UV-15, respectively. The device is fabricated by the reactive ion etching method. The splitting ratio of the fabricated device is 0.93 : 1.00 : 0.93 : 0.90 for TE mode and 0.84 : 0.94 : 1.00 : 0.83 for TM mode. The advantages of this device are small size and low polarization-dependence.

  • PDF

Technical Development of Flue Gas Control at Commercial Plant Using the Non-thermal Plasma Process (저온 플라즈마 공정을 이용한 상용설비의 배연가스 처리 기술개발)

  • Yoo, J.S.;Paek, M.S.;Kim, T.H.;Kim, J.I.;Kim, Y.S.;Choi, S.H.
    • Proceedings of the KSME Conference
    • /
    • 2001.06d
    • /
    • pp.939-944
    • /
    • 2001
  • For the application of simultaneous $DeSO_{2}\;&\;DeNO_{x}$ equipment using non-thermal plasma process to the industrial and power plants, the many types of plasma device and process were studied. The e-beam and pulsed plasma corona discharge process are outstanding for the study to apply commercial large-scale plant from among these. In this paper, non-thermal plasma of technical trends and the characteristics of system developed by Doosan heavy industries & construction Co., Ltd. are explained. We have researched pulsed plasma corona discharge process since 1994. At the basis of reasonable results for the pilot plant, we constructed the demonstration plant at a domestic coal-fired power plant in 1999, as the previous step for commercial use. In near future, enough information about designs and costs of commercial-size system will be obtained.

  • PDF

Finite Element Analysis of Large-Electron-Beam Polishing-Induced Temperature Distribution (대면적 전자빔 폴리싱 공정 시 발생하는 온도 분포 유한요소해석 연구)

  • Kim, J.S.;Kim, J.S.;Kang, E.G.;Lee, S.W.;Park, H.W.
    • Journal of the Korean Society of Manufacturing Technology Engineers
    • /
    • v.22 no.6
    • /
    • pp.931-936
    • /
    • 2013
  • Recently, the use of large-electron-beam polishing for polishing complex metal surfaces has been proposed. In this study, the temperature induced by a large electron beam was predicted using the heat transfer theory. A finite element (FE) model of a continuous wave (CW) electron beam was constructed assuming Gaussian distribution. The temperature distribution and melting depth of an SUS304 sample were predicted by changing electron-beam polishing process parameters such as energy density and beam velocity. The results obtained using the developed FE model were compared with experimental results for verifying the melting depth prediction capability of the developed FE model.

Cost Benefit Analysis of SF6 Decomposition Process Using an Electron Beam (전자빔을 이용한 SF6 처리 공정의 경제성 분석)

  • Park, Jun-Hyeong;Seo, Seo Hee;Son, Youn-Suk
    • Journal of Korean Society for Atmospheric Environment
    • /
    • v.33 no.4
    • /
    • pp.370-376
    • /
    • 2017
  • This study was performed to investigate whether the decomposition process of $SF_6$ using an electron beam is economically reasonable when applied to the actual field. To do this, electron beam experiment and economic analysis were conducted. The experiment conditions are initial concentration of 1% of $SF_6$, 1 mA of input energy and 15 mA of flow rate with $H_2$ as an additive which were obtained from our previous research. As a result, removal efficiency of $SF_6$ was 90% for 8 hours continuously. In addition, economic analysis shows positive results in terms of using $SF_6$ decomposition process using electron beam. According to the analysis, the revenue is approximately 1.66 billion won in the first year and 3 billion won in the second year.

Characteristics and Processing Effects of $ZrO_2$ Thin Films grown by Metal-Organic Molecular Beam Epitaxy (금속 유기 분자 빔 에피택시로 성장시킨 $ZrO_2$ 박막의 특성과 공정변수가 박막 성장률에 미치는 영향)

  • Kim, Myung-Suk;Go, Young-Don;Hong, Jang-Hyuk;Jeong, Min-Chang;Myoung, Jae-Min;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.07a
    • /
    • pp.452-455
    • /
    • 2003
  • [ $ZrO_2$ ] dielectric layers were grown on the p-type Si (100) substrate by metalorganic molecular beam epitaxy(MOMBE). Zrconium t-butoxide, $Zr(O{\cdot}t-C_4H_9)_4$ was used as a Zr precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and the properties of the $ZrO_2$ layers were evaluated by X-ray diffraction, high frequency capacitance-voltage measurement. and HF C-V measurements have shown that $ZrO_2$ layer grown by MOMBE has a high dielectric constant (k=18-19). The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows.

  • PDF

점진적인 굴절률 변화를 갖는 투명전도 산화막이 실리콘 태양전지의 특성에 미치는 영향

  • O, Gyu-Jin;Kim, Eun-Gyu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.225.2-225.2
    • /
    • 2013
  • 실리콘기반의 광전변환 소자는 소자공정의 편의성, 소자 신뢰성, 화학적 안정성, 그리고 저가경쟁력 등의 이점 때문에 수 십 년간 널리 연구되어 왔다. 그러나, 실리콘 재료의 경우 높은 굴절률로 인해 표면에서 높은 광 반사도를 가지고 있다. 일반적으로, 태양전지의 광전변환 효율은 빛이 서로 다른 유전율을 가진 계를 통과할 때 발생하는 계면반사로 인한 물리적인 한계를 가진다. Indium Tin Oxide (ITO)는 발광 다이오드, 태양전지, 그리고 광 검출기 등의 광소자에 적용하기 위해 수 년간 투명전도 산화막 재료로서 연구되어 왔다. ITO의 뛰어난 광학적, 전기적 특성은 높은 투과도와 낮은 전기 전도도를 요구하는 소자 응용에 대해 유망한 후보로 거듭나게 했다. 게다가, ITO의 굴절률은 대략 2정도이다. 그 결과, ITO는 반도체 기반 태양전지의 무반사 코팅 소재로서도 장점을 가지고 있다. 본 연구는 전자빔 증착법으로 경사입사 증착을 하여 실리콘 기반 태양전지에 증착될 ITO 박막의 굴절률을 조절한다. 여기서, 실리콘의 굴절률은 대략 3.5정도이다. 그러므로, 더 나은 광학적 특성을 가지기 위해 다층으로 올려진 ITO 박막이 점진적인 굴절률 변화를 가지는 것을 필요로 한다. 점진적 굴절률 변화를 가진 무반사 박막이 실리콘 태양전지의 특성에 미치는 영향을 평가하기 위해 광전변환 효율을 측정하였다. 증착된 박막의 굴절률과 표면형상은 각각 타원편광분석과 Atomic Force Microscopy (AFM)을 통해 분석되었다. 또한, 소자의 단면형상은 Scanning Electron Microscopy (SEM)으로 측정되었다.

  • PDF

Homogeneous Alignment Characteristics of Liquid Crystal Molecules on Solution-Derived Lanthanum Zinc Oxide Film with Ion-Beam Irradiation (이온빔 조사된 용액 공정 기반 LaZnO 박막 위 액정 분자의 수평 배향 특성)

  • Oh, Byeong-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.32 no.5
    • /
    • pp.382-386
    • /
    • 2019
  • The alignment characteristics of liquid crystal (LC) molecules on a solution-derived lanthanum zinc oxide (LZO) film under ion-beam irradiation were demonstrated. Using the solution process, an LZO film was fabricated on the glass substrate and cured at $100^{\circ}C$. Afterwards, ion-beam irradiation was performed following the LC alignment method. Using this film, an LC cell was fabricated and the characteristics of the LC alignment were verified. Cross polarizing microscopy and the crystal rotation method were used to investigate the alignment state of the LC molecules on the LZO films. Furthermore, field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to explore the effect of the ion-beam irradiation on the LZO film. Through these, it was confirmed that the ion-beam irradiation induced surface modification, which demonstrated anisotropic physical and chemical surface characteristics. Due to this, uniform LC alignment was achieved. Finally, the residual DC and anchoring energy of the LC cell based on the LZO films were measured using a capacitance-voltage curve.

Fabrication of Fluorescent Oxygen Sensor Probe Module Based on Planner Lightwave Circuits using UV Imprint Lithography (UV 임프린트 공정을 이용한 평면 광회로 기반 형광 산소 센서 프로브 모듈 제작)

  • Ahn, Ki Do;Oh, Seung hun
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.25 no.3
    • /
    • pp.37-41
    • /
    • 2018
  • This paper presents the integrated fluorescent oxygen sensor probe module based on planner lightwave circuits using UV imprint lithography. The oxygen sensor system is consisted of the optical source part, optical detector part and optical sensing probe part to be composed of the planner lightwave circuit and oxygen sensitive thin film layer. Firstly, we optimally designed the planner lightwave circuit with asymmetric $1{\times}2$ beam splitter using beam propagation method. Then, we fabricated the planner lightwave circuits using UV imprint lithography process. This planner lightwave circuits transmitted the optical power with 76% efficiency and the fluorescence signal with 70% efficiency. The oxygen sensitive thin film layer is coated on the end face of planner lightwave circuit. The oxygen sensor system using this sensor probe module with planner lightwave circuit could measure the concentration with 0.3% resolution from 0% to 20% gas range. This optical oxygen sensor probe module make it possible to compact, simple and cheap measurement system.

COG(chip-on-glass) Mounting Using a Laser Beam Transmitting a Glass Substrate (유리 기판을 투과하는 레이저 빔을 사용한 COG(chip-on-glass) 마운팅 공정)

  • 이종현;문종태;김원용;김용석
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.8 no.4
    • /
    • pp.1-10
    • /
    • 2001
  • Chip-on-glass(COG) mounting of area array electronic packages was attempted by heating the rear surface of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion (i.e. Cr or Ti) and a top coating layer(i.e. Ni or Cu) were healed by the UV laser beam transmitted through the glass substrate. The lather energy absorbed on the pad raised the temperature of a solder ball which is in physical contact with the pad, and formed a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layer. In addition, the microstructures of solder bumps and their mechanical properties were examined.

  • PDF