• Journal of Korean Electronics
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• v.11 no.8
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• pp.153-154
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• 1991

• Journal of Korean Electronics
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• v.19 no.11
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• pp.1-8
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• 1999

자동차, 전자, 기계, 금속, 화학 등 5대 핵심부품 소재분야의 성장잠재력이 큰 선도기업을 선정, 세계 초일류 업체로 육성하는 '스타컴퍼니'제도 도입된다. 부품산업 육성을 '포스트재벌'시대의 신산업정책으로 설정한 산업자원부는 지난 10월 6일 여의도 기계회관에서 열린 부품소재 산업 대토론회에서 이같은 '21세기 지식ㆍ디지털 산업시대에 대비한 새로운부품소재산업 육성방안'을 마련, 발표했다. 본고는 이를 요약정리한 내용임.

• Journal of Korean Electronics
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• v.16 no.12
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• pp.42-49
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• 1996

• Journal of Powder Materials
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• v.15 no.2
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• pp.81-86
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• 2008

최근프린팅기술은 전자부품소재 산업의 대형화 및 저가격화의 해법으로 기대되고 있다. 특히 전자부품소재 프린팅 기술 중 잉크젯공정은 최신 디스플레이용 전극소재, PCB, FPCB 및 기타 소재공정에 이용하려는 움직임이 활발히 진행되고 있다. 그러나 잉크젯 기술은 재료의존도 비중이 높은 기술로서 소재(금속잉크)의 개발이 최우선시 되어야한다. 전자부품소재용 금속잉크에 사용되는 금속 나노입자는 우수한 전기전도성과 산업적응용이 가능해야 한다. 따라서 최근 연구되고 있는 금속 나노입자의 연구결과 중 전자잉크에 적용 가능한 연구결과와 응용분야에 대하여 서술하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.4
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• pp.282-285
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• 2019

A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current($I_{dss}$), an extrinsic transconductance($g_m$) of 1,090 mS/mm and a threshold voltage($V_{th}$) of -0.65 V. The $f_T$ and $f_{max}$ obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.477-482
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• 2019

This study investigated the influence of the viscoelastic property of slag when producing glass fiber, MFS631 with 60% of manganese slag, 30% of steel slag, and 10% of silica stone. To fabricate the MFS631 glass bulk, slag materials were placed in an alumina crucible, melted at $1,550^{\circ}C$ for 2 h, and then annealed at $600^{\circ}C$ for 2 h. It was found that glass is non-crystalline through X-ray diffraction analysis. MFS631 fiber was produced at speed in the range of 100~300 rpm at $1,150^{\circ}C$. The loss modulus (G") and storage modulus (G') of the produced glass fiber were evaluated at high temperatures. G' and G" of MFS631 were greater than $893^{\circ}C$, and the modulus value was 136,860 pa. This is similar to the results of a general E-glass fiber graph. Therefore, it was concluded that its spinnability is similar to that of E-glass fiber; therefore, it can be commercialized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.174-177
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• 2019

The traditional yttria-stabilized zirconia (YSZ) used in thermal barrier coatings has a limited operating temperature owing to densification and volume changes at high temperatures. A $(La_{1-x}Y_x)_2Zr_2O_7$ sintered compound was prepared by the co-precipitation and oxalate methods, by adding lanthanum zirconate to yttria. The thermal properties and crystallinity obtained by the two different methods were compared. Both methods yielded pyrochlore structures, and the oxalate method confirmed phases at low temperatures. The thermal conductivity of the sintered bulk prepared by co-precipitation was 0.93 W/mK, while that prepared by the oxalate method was 0.85 W/mK. These values are superior to that of 4YSZ at $1,000^{\circ}C$, which is widely used in industries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.

• Journal of Korean Electronics
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• v.20 no.4
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• pp.19-35
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• 2000

본 내용은 최근 한국산업은행에서 발표한 '부품ㆍ소재산업 기술 경쟁력 분석 및 발전방안'중 '전자부품' 부문만을 발췌ㆍ요약 정리한 것이다.

• Journal of Korean Electronics
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• v.4 no.9
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• pp.2-7
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• 1984