• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.351-352
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• 2006

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_2O_3$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_2O_3$.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.997-1002
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.252-255
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_{2}O_{3}$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_{2}O_{3}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.585-586
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• 2005

BSCCO thin films were fabricated by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi2O3. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 산업식품공학
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• 제23권2호
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• pp.118-124
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• 2019

본 연구는 쌀과 차전자피를 기본 원료로 하여 glycerol monostearate (GMS), polyglycerol ester (PGE), sugar ester (SE)를 첨가한 압출성형물의 물리적 특성을 살펴보았다. 압출성형 공정변수는 원료 사입량 100 g/min, 스크루 회전속도 200 rpm, 사출구 온도 140℃, 수분함량 16%로 조절하였다. 압출성형 후 직경팽화율, 비길이, 밀도, 겉보기 탄성계수, 파괴력, 조직감, 색도, 수분용해지수, 수분흡착지수, 미세구조를 측정하였다. 직경팽화율은 대조군에서 4.71±0.17로 가장 높았고 GMS 0.5% 첨가군에서 3.52±0.08로 가장 낮았다. 비길이와 밀도는 대조군에서 가장 낮았다. 겉보기 탄성계수와 파괴력은 PGE 0.1% 첨가군에서 2.61E+04 N/㎡, 15.20±3.55 N/㎠로 가장 높았으며 대조군에서 1.36E±04 N/㎡, GMS 0.5% 첨가군에서 10.47±2.32 N/㎠로 가장 낮았다. 부착성은 대조군에서 -36.00±5.48 g으로 가장 높았고 GMS 0.5%와 SE 0.1% 첨가군에서 -24.00±5.48g, -24.00±5.58 g으로 가장 낮았지만 유화제 첨가군 사이에서 유의적인 차이가 없었다. 색도는 유화제 첨가군에서 명도가 증가하는 경향을 보였고 총 색도차는 감소하였다. 수분 용해지수와 수분 흡착지수는 대조군에서 41.73±0.48%, 8.09±0.05 g/g으로 가장 높았다. 미세구조는 대조군에서 기공의 크기가 가장 컸으며 유화제 첨가군에서 더 작은 기공 조직을 나타내었다. 차전자피 압출성형물에서 유화제의 첨가는 기공의 크기와 경도를 감소시켜 부드러운 조직감을 나타내었고 수분용해지수, 수분흡착지수, 부착성을 감소시켜 차전자피 압출성형물의 물성을 조절할 수 있는 것을 확인하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2016년도 전력전자학술대회 논문집
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• pp.89-90
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• 2016

인버터에 사용되는 전력용 반도체 소자의 정션 온도는 모듈의 보호 및 수명 예측에 중요한 영향을 미친다. 온도를 추정하기 위해 제조사에서 제공되는 데이터 시트로부터 피라미터를 찾아 입력하게 되는데, 온도, 전류 및 $R_g$ 저항 등의 요인에 의해 이 파라미터가 변경된다. 본 논문은 온도 추정 과정에서 사용되는 파라미터에 온도에 따라 변동되는 성분을 선형화하여 추가하여 현재 온도에 맞는 파라미터를 계산해 낼 수 있는 방법에 관한 것으로 데이터 시트로부터 미리 계산된 계수 값을 이용하여 수식적으로 온도 의존성을 반영할 수 있다.이를 이용하여 부하 전류, 스위칭 주파수, DC Link 전압 등의 변동에 따라 정션 온도를 실시간으로 추정하였으며, iGBT 의 상단에 온도 센서를 부착하여 추정결과를 검증하였다. 본 방법을 통해 파라미터의 온도 의존성을 수식적으로 반영할 수 있으므로 파라미터를 저장하는 인버터의 데이터 저장 공간을 최소화 할 수 있다.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.