• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.74-74
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• 1999

TEM(투과전자현미경, Transmission Electron Microscop)은 결정재료뿐 아니라 비정질 재료까지도 원자단위의 구조를 연구하는데 매우 유용한 도구이다. 특히 200kV의 가속전압 투과전자현미경에 FEG(Field Emission Gun) 전자총이 장착되기 시작하면서 TEM은 비정질 구조 연구에 하나의 핵심적인 도구로서의 역할이 크게 기대되는 장비가 되었다. 본 연구에서는 TEM의 microanalysis accessary인 EELS(Electron Energy Loss Spectroscopy)technique을 주로 이용하던 기존의 방법대신 고 분해능(HRTEM(High Resolution Transmission Electron Microscopy)의 image로부터 비정질 정량묘사의 유일한 도구인 원자분포함수(RDF(Radial Distribution Function))로의 Reconstruction을 Simulation을 이용하여 시도하였다. 비정질 HRTEM image의 정량분석을 통하여 이 분야에서의 TEM의 한계를 이해하기 위하여 몇 모델을 제시하고 사용하였다. 또한 비정질 구조를 정량적으로 묘사하는 도구인 원자분포함수를 알아보고 비정질재료를 보다 물리적으로 모델링하기 위하여 가능한 모델 제시 후 첫 단계로서 HRTEM image에서 원자분포함수를 이끌어내기 위한 모델링을 수행하고 비정질 게르마늄(a-Ge) film에 대하여 실제로 적용하여 보았다. 마지막으로 실험적인 접근으로 200kV FE-TEm (poingt resolution 0.14nm) 으로 비정질 Ge의 image를 solw Scan CCD를 이용한 Elastic image를 Through Focus로 얻었으며 수치적인 정량비교를 역격자 공간에서 출발한 가장 물리적인 구조 모델을 이용하여 수행하였다. 모든 정량비교는 image의 Fourier 변환인 Diffractogram으로 하였다. 결론적으로, 많은 복잡한 수치 처리과정을 거쳐야 하지만 HRTEM의 image로부터 구조에 대한 정보(RDF)는 명확하게 얻을 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.723-728
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• 2003

The Ejector is used to get low pressure, and it has been applied to a lot of industry field like the heat engine, the fluid instrument power plant, the food industry, environment industry etc... because there are not any problem even it is mixed with a any kind of liquid, gas, and solid. The flow characteristics in ejector are investigated by PIV and CFD. The experiment using PIV measurement for mixing pipe's flow characteristics acquired velocity distribution, kinetic energy distribution, and whirlpool . (Condition : when mixing pipe's diameter ratio is 1:1.9, and the flux is $Q_{1}=1.136{\imath}/s$, $Q_{2}=1.706{\imath}/s$, $Q_{3}=2.276{\imath}/s$. Based on the PIV and the CFD results, the flow characteristics in ejector are discussed, and it shows the validity of this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.888-891
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.348-348
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• 2012

휴대용 저장매체에서부터 solid state disk와 같은 고속 시스템 저장 매체 까지 플래시 메모리의 활용도가 급속도로 커지고 있다. 이에 플래시 메모리에 대한 연구 또한 활발히 진행 되고 있다. 현재 다결정 실리콘을 전하 주입 층으로 사용하는 기존의 플래시 메모리는 20 nm 급 까지 비례 축소되어 활용되고 있다. 하지만 20 nm 이하 크기의 소자에서는 과도한 누설전류와 구동전압의 불안정, 큰 간섭현상으로 인한 성능저하와 같은 많은 문제점에 봉착해 있다. 이를 해결하기 위해 FinFET, Vertical 3-dimensional memory, MRAM (Magnetoresistive Random Access Memory), PRAM(Phase-change Memory)과 같은 차세대 메모리 소자에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 차세대 메모리 구조로 주목 받고 있는 FinFET 구조를 가진 플래시 메모리에서 fin 의 채널영역의 도핑 농도 변화에 의한 20 nm 이하의 게이트 크기를 가지는 소자의 전기적 특성과 프로그램 특성을 3차원 시뮬레이션을 통해 계산하였다. 본 연구에서는 FinFET 구조를 가진 플래시 메모리의 채널이 형성되는 fin의 윗부분도핑농도의 변화에 의한 전기적 특성과 프로그램 특성을 계산하였다. 본 계산에 사용된 구조는 게이트의 크기, 핀의 두께와 높이는 18, 15 그리고 28 nm이다. 기판은 Boron으로 $1{\times}10^{18}cm^{-3}$ 농도로 도핑 하였으며, 소스와 드레인, 다결정 실리콘 게이트는 $1{\times}10^{20}cm^{-3}$ 농도로 Phosphorus로 도핑 하였다. 채널이 형성되는 fin의 윗부분의 도핑농도를 $1{\times}10^{18}cm^{-3}$ 에서 $1{\times}5^{19}cm^{-3}$ 까지 변화 시키면서 각 농도에 대한 프로그램 특성과 전기적 특성을 계산하였다. 전류-전압 곡선과 전자주입 층에 주입되는 전하의 양을 통해 특성을 확인하였고 각 구조에서의 채널과 전자 주입 층의 전자의 농도, 전기장, 전기적 위치 에너지와 공핍 영역의 분포를 통해 분석하였다. 채널의 도핑농도 변화로 인한 fin 영역의 공핍 영역의 분포 변화로 인해 전기적 특성과 프로그램 특성이 변화함을 확인하였다.

• Journal of Biomedical Engineering Research
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• v.25 no.3
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• pp.165-169
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• 2004

In Magnetic Resonance Electrical Impedance Tomography (MREIT), we inject current through electrodes placed on the surface of a subject and measure the induced magnetic flux density distribution using an MRI scanner. This requires a constant current source whose output pulses are synchronized with MR pulse sequences. In this paper, we present a design and performance analysis of a current source used in a 3.0T MREIT system. The developed current source was tested using a saline phantom. We found that its performance is satisfactory for the current MREIT system. We suggest future improvements for better SNR(signal-to-noise ratio).

• Journal of the Korean Society of Hazard Mitigation
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• v.7 no.5
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• pp.111-118
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• 2007

Recently electric shock accidents constantly occurs caused by the street lamps. Especially the chance of electric shock accident is high when the street lamp submerges by heavy rainfall. Electric shock accident occurs mostly on the low voltage facilities of 220V, but the awareness of its danger is insufficient. The electric shock accident by street lamp voltage of 220V is very dangerous because it is installed in the street which is easily in contact with people. But there are insufficient investigation concerning the affect to hwnan body of underwater electric potential distribution as the distance changes from the leakage object in case of short circuit. In this thesis, the analysis will be made on the affect of underwater Earth leakage to human body and electric potential distribution in underwater, and to draw a comparison between electric shock channel and electric shock mechanism by experimenting on the affect to human body of underwater electric shock as the distance changes from the leakage object.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.10-18
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• 2002

This paper reports a methodology for calculating distribution of the director in an In-plane switching liquid crystal cell by a numerical technique. To calculate distribution of the director, we developed a three dimensional finite element method (FEM) and calculated the distribution of electric potential and electric field in the liquid crystal cell. We have considered the free-energy density composed of electric potential and strain energy in the bulk of liquid crystal cell and calculated the switching property of liquid crystal cell by the Ericksen-Leslie equation and the Laplace equation We generated 1,859 nodes and 8,640 elements for IPS mode cell with 24${\mu}{\textrm}{m}$$\times$12${\mu}{\textrm}{m}$$\times$4.5${\mu}{\textrm}{m}$ and performed transient analysis until 16ms. As a result, horizontal electric field occurred at cell region except liquid crystal region above electrodes and the disclination occured on electrodes.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.72-80
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• 2010

It is very important to predict and analyze the change of voltage and current distribution of current strap, abnormal voltage distribution of transmission line and resonance phenomenon by coupling between current straps for more stable operation of ICRF system. In this study, to understand those phenomena by coupling, 8-port coupled transmission line model is completed by appling S-parameter measured in the prototype KSTAR ICRF antenna to the model. The determined self-inductance, mutual-inductance and capacitance of antenna straps are shown to be lower than that calculated from 2D approximate model due to finite length of strap. The coupled transmission line model of current strap will be utilized to the operation of ICRF system of KSTAR in the future.

• Journal of Soil and Groundwater Environment
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• v.9 no.1
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• pp.54-62
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• 2004

In order to enhance the efficiency of removal a series of ElectroKinetic Remediation (EKR) tests on ferrous soil contaminated by lead are carried out using acids, chelates and surfactant as flushing agents. The test results indicate that pH in the electrolyte rapidly reached at steady state as the introduce of flushing solution of the lower pH, the type of flushing solution have no effect the distribution of electrical voltage within the sample but the increasing of solution concentration increases it at x/L=0.9. In the distribution of the residual lead in the sample SDS is the highest. Also, the removal efficiency for acetic acid concentration of 1mM Is the highest but the concentration of acetic acid significantly have no effect.