• Title/Summary/Keyword: 전류구동형 자화반전

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Technology Trend of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM) (스핀전달토크형 자기저항메모리(STT-MRAM) 기술개발 동향)

  • Kim, D.K.;Cho, J.U.;Noh, S.J.;Kim, Y.K.
    • Journal of the Korean Magnetics Society
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    • v.19 no.1
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    • pp.22-27
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    • 2009

  • Reduction of the critical current density ($J_c$) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.

  • https://doi.org/10.4283/JKMS.2009.19.1.022 인용 PDF KSCI