• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.425-433
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• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

• Korean Journal of Soil Science and Fertilizer
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• v.3 no.1
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• pp.49-54
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• 1970

In an effort of determine the metabolism and bio-synthesis of nitrogen, was studied at variance of souble nitrogens, free amino acids and total alcohol soluble amino acids during the growth of younger soybean plants, and saybean divides into cotyledon and embryonic organ (shoot and root system) in this experiment. 1. In the soluble nitrogen of soybean, ratio of increase and decrease in the amino acids of them was displayed the near phenomena both cotyledon and embryonic organ of soybean. But, in the 17th days after seed germination, that is the developmeatal stage of adult leaf of soybeans, was appear the maximum value. It has been suggested that the stage of first half period of growth as boundary the stage of adult leaf development which indicated clear morphologically, at the younger soybean plants, is the step that nitrogen assimilation. 2. It was investigated the amino acids of seventeen kinds in the seed state, but at the third days after seed germination, was investigated the amino acids of nineteen kinds. Ultimately, it appears the translocation from cotyledon to embryonic organ in the distribution of amino acid, the nineth day which differentiation begining day of embryonic organ, then after, it happen the variation of number of inspected amino acid in the cotyledon and embryonic organ but only the variance changes in the distribution and quantitative aspects. Especially, the most conspicuous fact was indicated the accumulation of Asparagine, that is the phenomena of Asparagine-accumulation was constitute, not with standing no fertilization from outside. It may be concluded from the results of this investigation that the difference of special phenomena of soybean from the embryo of other plans. 3. In the initial stage of differentiation at embryonic organ number of inspected amino acid was very few, and then, it was slightly appeared the increase-phenomena in the number of them. It was that the amino acid inspecting the initial stage was translocated from the cotyledon. It is suggested that the intermediate-metabolism of amino acid was constituted on the basis of above the result. 4. The phenomena of increase and decrease of total alcohol soluble amino acid were essentially identical to the water soluble amino acid of soybean, but it was appeared the severe difference of amounts in both of them.

• Journal of Sericultural and Entomological Science
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• v.24 no.2
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• pp.55-72
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• 1983

These studies were done to find out any difference, ultrastructural, physical or chemical, between the shells of diapausing and non-diapausing eggs of the silkworm, Bombyx mori L. 1. From the electron-microscopic observation, the egg shells have four distinctive layers. In addition to the four layers, the shells in the diapausing eggs has another layer with low electron density on its surface. 2. The permeability of the egg shell to hydrochloride was much lower in diapausing egg than in non-diapausing egg. Also the permeability changed in the opposite directions with the egg age: the diapausing eggs decreased while non-diapausing ones increased. 3. The permeability increased when the diapausing egg shell was treated with HCl. When they were treated with ether, however, the increase in permeability was much smaller. It seems there was an ether soluble material involved in the content of the egg shell. 4. The diapausing eggs were also much more resistant to desiccation than the non-diapausing ones. The former, when treated with HCl or chilling, became less resistant to desiccation. 5. The positive histochemical response of the egg shell to PAS-Alcian blue and protein stainings suggests presence of abundant proteins and carbohydrates in the egg shell. On the other hand, the staining response to lipid was more positive in the inner layers than in the outer layer of the shell. 6. The egg shell adhesives seems to be mucopolysaccharides produced by colleterial glands, since the oviposited eggs showed a positive responses to carbohydrate and negative to lipid-staining chemicals, but not the mature oocytes in the ovarioles. 7. There were two bands on the electrophoretic pattern of the SH proteins extracted from the egg shells both in the diapausing egg and non-diapausing one: a slow moving major component and a fast moving minor one. However, the electrophoretic mobility showed a difference in the minor components between them. It is evident that the fast moving minor one of non-diapausing egg ran a little further than that of diapausing egg. 8. In amino acids analysis, no significant differences were found in their composition between diapausing and non-diapausing egg and SH proteins contain relatively more glycine and less cystine.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.353-353
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• 2012

InAs nanowires (NWs)는 나노소자스케일의 전자소자나 광전자소자를 위한 기본 단위(building block)로 사용될 수 있고, 1차원적 나노구조를 가지면서 나타나는 특별한 전기적, 광학적 특성으로 인해 전계효과 트랜지스터, 레이저, 광발광 다이오드, 가스 검출 센서 등의 많은 응용소자로 활용을 위한 연구가 진행되 있으며 주로 실리콘, 갈륨비소 기판 위에 금속유기기상 증착(MOCVD) 또는 분자선 증착 (MBE)을 이용하여 선택적 수직배열 성장 조절을 위한 연구와 특성 평가 연구가 주로 이뤄지고 있다. 본 연구에서는 InAs NWs를 MBE 장치를 이용하여 Si(111) 기판 위에 Au와 같은 촉매를 사용하지 않고 Si과 InAs의 큰 격자 불일치로 인하여 성장되는 Volmer-weber 성장 모드를 이용 하였다. InAs NW 성장모드는 Si ($5.4309{\AA}$)과 InAs ($6.0584{\AA}$) 사이에 큰 격자상수 차이를 이용하게 되는데 촉매를 사용하여 성장하는 일반적인 이종 화합물 반도체 성장 모드와 달리 액상상태가 존재하지 않고 바로 In과 As이 Si 기판 위를 이동하여 수직방향으로 성장이 이루어지는 vaporsolid(VS) 모드이다. InAs NW V-S 성장 모드는 Si 기판과의 격자 상수차에 의한 스트레스를 이용해야 하므로 Si기판 위에 존재하는 native oxide는 완벽히 제거되어야 한다. InAs NW 최적 성장 조건을 찾기위해 V/III raitio, 성장 온도, 기판표면처리 등의 성장 변수를 변화 시켜가며 실험을 수행하였다. Native oxide를 제거하기 위하여 HF와 buffered oxide etchant (BOE)를 사용하였다. InAs NWs 성장조건은 Indium flux를 고정 시키고 V/III ratio는 50~400까지 변화를 주었다. V/III ratio를 200으로 고정을 시키고 성장온도를 $375{\sim}470^{\circ}C$에서 성장 하였다. 이 때 InAs NWs는 $430^{\circ}C$에서 가장 높은 밀도와 aspect ratio를 얻을 수 있었다. Arsenic flux에 대해서는 많을 수록 좋은 aspect ratio를 얻을 수 있었다. 하지만 InAs 구조의 절대 부피는 거의 같다는 것을 확인 할 수 있었고 이는 온도와 V/III ratio가 Indium adatom의 surface migration length에 대하여 중요한 요소로 작용되는 것을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.285-286
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• 2012

육각형 구조를 지닌 2차원의 물질인 그래핀은 우수한 전도도와 투과율로 투명전극의 신소재로 각광 받고 있다. 특히, 그래핀은 현재 투명전극으로 가장 많이 사용되고 있는 Indium Tin Oxide(ITO)로는 구현하기 힘든 Flexible display의 어플리케이션으로 사용하기 위한 목적으로 많은 기술 개발이 이루어지고 있다. 이러한 그래핀의 응용은 가장 먼저 그래핀의 생산이 안정적이고 원활히 이루어질 때 실질적으로 가능할 것이다. 하지만, 탄소로 이루어진 그래핀의 성장은 제한된 기판 위에서만 가능하기 때문에 성장이 이루어진 그래핀을 다른 기판에 전사시켜야하는 문제점이 있다. 그래핀 전사방법에는 직접전사, PMMA 전사, TRT 전사, 금속전사, 망전사, PDMS 전사 등 다양한 방법이 있다. 이 중에서 현재 가장 많이 사용되고 있는 전사방법으로는 직접전사, PMMA 전사, TRT 전사 방법이 있다. 직접전사의 경우 니켈위에 성장된 다층의 그래핀을 전사시킬 때 많이 사용되는 방법으로 니켈 에천트에 전사 시킬 그래핀을 띄워 니켈을 녹인 후 원하는 기판을 이용하여 전사하는 간단한 방법이다. 직접전사는 전사가 이루어진 후 그래핀에 남는 결함이 거의 존재 하지 않는 장점이 있지만 문제점은 단일층의 그래핀의 경우 니켈 에천트위에서 잘 보이지 않을 뿐 아니라 에천트에서 기판으로 전사할 때 너무 얇은 막으로 인해 다 찢어져버린다는 것이다. 이를 해결하기 위해 사용되는 전사 방법으로 TRT를 이용하여 구리위에 성장된 그래핀을 상온 시에는 점성을 가진 테이프를 이용해 부치고 구리에 천트에 구리를 녹인 후 원하는 기판위에 놓고 열을 가해 그래핀을 전사하는 방법이 있다. TRT 전사방법은 얇은 막의 그래핀을 찢어지지 않도록 지지해주어 대면적 기판위에도 전사 할 수 있는 장점이 있지만 전사 후 그래핀에 남아 있는 잔여물들이 많고(그림 1. (b)), 테이프를 이용한다는 점에서 그래핀의 얇은 막이 손상될 수 있는 단점이 있다. 그렇기 때문에 본 연구에서는 직접전사와 TRT전사의 문제점들인 전사 후 잔여물와 그래핀 단일층의 손상을 최소화할 수 있는 방법으로 PMMA전사를 가장 적합한 전사방법이라는 것을 라만 분석, 면 저항측정, 그래핀을 이용한 LED제작을 통해서 살펴 보았다. 먼저 라만 분석을 이용해 TRT전사 후 상당히 많은 빈 공간이 생김을 확인할 수 있었으며, 결과적으로 면 저항이 약 $1.5k{\Omega}$~$3M{\Omega}$까지 PMMA의 약 0.9~1.2 $k{\Omega}$와 비교했을 때 큰 차이가 있음을 확인할 수 있었다. 또한, 이후 각각의 전사방법으로 얻은 그래핀을 LED의 스프레딩 층으로 제작한 결과에서도 TRT전사방법보다 PMMA전사방법의 결과가 좋음을 알 수 있었다(그림 2).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.337-347
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• 2013

It is generally well-known that the inevitable high power electromagnetic wave affects the malfunction and disorder of electronic equipments and serious damages in electronic communication systems. Hence, it is necessary to take measures against high power electromagnetic(HPEM) wave for protecting electronic devices as well as human resources. The topological analysis based on Baum-Liu-Tesche(BLT) equation simplifying the moving path of electromagnetic and the observation points and Power Balance Method(PWB) employing statistical electromagnetic analysis are introduced to analyze relatively electrically large cavity with little time consumption. In addition to the PWB method, full wave results for cylindrical cavity with apertures and incident plane wave are presented for comparison with time-consumption rate according to the cavity size.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.5
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• pp.515-525
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• 2014

In this paper, we present a design and implementation of a Voltage-tuned Planar Composite Resonator Oscillator(Vt-PCRO) with a low phase noise. The designed Vt-PCRO is composed of a resonator, two phase shifters, and an amplifier. The resonator is designed using a dual mode SIW(Substrate Integrated Waveguide) resonator and has a group delay of about 40 nsec. Of the two phase shifters (PS1 and PS2), PS1 with a phase shift of $360^{\circ}$ is used for the open loop gain to satisfy oscillation condition without regard to the electrical lengths of the employed microstrip lines in the loop. PS2 with a phase shift of about $70^{\circ}$ is used to tune oscillation frequency. The amplifier is constructed using two stages to compensate for the loss of the open loop. Through the measurement of the open loop gain, the tune voltage of the PS1 can be set to satisfy the oscillation condition and the loop is then closed to form the oscillator. The oscillator with a oscillation frequency of 5.345 GHz shows a phase noise of -130.5 dBc/Hz at 100 kHz frequency offset. The oscillation power and the electrical frequency tuning range is about 3.5 dBm and about 4.2 MHz for a tuning voltage of 0~10 V, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1034-1046
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• 2013

In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary harmonic impedances is presented. The adopted GaN HEMT device, TGF2023-02 of TriQuint Semiconductor, was packaged in commercial package. The optimal impedances of the GaN HEMT package are extracted from load-pull simulation at package input and output reference planes. The targets of load-pull simulation are the highest output power at fundamental frequency and the highest efficiency at $2^{nd}$ and $3^{rd}$ harmonic frequencies. Because of fixture in the package, the extracted impedances shows arbitrary harmonic impedances. In order to match the optimal impedances, output matchin circuit which has 4 transmission lines is presented. Characteristic impedances and electrical lengths of the transmission lines are mathmatically calculated. The power amplfiier with $54.6{\times}40mm^2$ shows the output power of 8 W at the fundamental frequency of 2.5 GHz, the efficiency above 55 %, and harmonic suppression of above 35 dBc at the $2^{nd}$ and the $3^{rd}$ harmonics.

• Membrane Journal
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• v.27 no.3
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• pp.205-215
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• 2017

Polymer membranes are cheap and easy in fabrication, and show a high permeability and selectivity, thus play pivotal roles in gas separation as well as water purification. However, polymer membranes typically exhibit the trade-off relation between permeability and selectivity; i.e. when the permeability is high, the selectivity is low and vice versa. Facilitated transport has been considered one of the solutions to address this issue. Over the last decades, facilitated transport concept had played an important role in preparing the membranes and providing ideal and various models for the transport. Understanding the nature of carrier, the mobility of matrix and the physico-chemical properties of polymer composites are crucial for facilitated transport. Depending on the mobility of carrier, facilitated transport membrane is classified into three; mobile carrier membrane, semi-mobile carrier membrane, fixed-site carrier membrane. Also, there are four types of reversible reaction between the carrier and the specific target; proton transfer reaction, nucleophilic addition reaction, p-complexation reaction and electrochemical reaction. The facilitated transport membranes have been applied in the separation of CO2, O2 and olefin (propylene or ethylene). In this review, major challenges surrounding facilitated transport membranes and the strategies to tackle these challenges are given in detail.