• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.97-105
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• 2012

The effects of pH, types of applied current, agitation method and time, additive on the amount of co-deposited $TiO_2$ particles in the matrix were investigated. The deposition rates increased with increasing pH values, while the volume fraction of $TiO_2$ particles and the size of agglomerated $TiO_2$ particles in the composite decreased. The volume fraction of $TiO_2$ particles in the composite decreased when pulsed current of 50% duty cycle was used. And the size of agglomerated $TiO_2$ particles in the nickel matrix of pulsed current was smaller than that of DC current specimen. The volume fraction of $TiO_2$ particles in the matrix decreased with longer time by air agitation, but in case of using magnetic bar, volume fraction in the same range of time was relatively constant. The volume fraction of the electrodeposited Ni-$TiO_2$ composite in the solution containing 0.01 M Dimethylamine borane (DMAB) increased slightly with increasing agitation time regardless of agitation methods. Thermal stability of the electrodeposited Ni-$TiO_2$ composite increased with lower pH at the temperature range of $200{\sim}800^{\circ}C$, and the results showed that the amount of co-deposited $TiO_2$ relies more on the deposition rate than zetapotential of $TiO_2$ particles.

• Journal of Institute of Convergence Technology
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• v.8 no.1
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• pp.33-39
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• 2018

The screen printing method for forming the electrode by applying the existing pressure is difficult to apply to thin wafers, and since expensive Ag paste is used, it is difficult to solve the problem of cost reduction. This can solve both of the problems by forming the front electrode using a plating method applicable to a thin wafer. In this paper, the process conditions of electrode formation are optimized by using LIEP (Light-Induced Electrode Plating). Experiments were conducted by varying the Ni plating bath temperature $40{\sim}70^{\circ}C$, the applied current 5 ~ 15 mA, and the plating process time 5 ~ 20 min. As a result of the experiment, it was confirmed that the optimal condition of the structural characteristics was obtained at the plating bath temperature of $60^{\circ}C$, 15 mA, and the process time of 20 min. The Cu LIEP process conditions, experiments were conducted with Cu plating bath temperature $40{\sim}70^{\circ}C$, applied voltage 5 ~ 15 V, plating process time 2 ~ 15 min. As a result of the experiment, it was confirmed that the optimum conditions were obtained as a result of electrical and structural characteristics at the plating bath temperature of $60^{\circ}C$ and applied current of 15 V and process time of 15 min. In order to form Ni silicide, the firing process time was fixed to 2 min and the temperature was changed to $310^{\circ}C$, $330^{\circ}C$, $350^{\circ}C$, and post contact annealing was performed. As a result, the lowest contact resistance value of $2.76{\Omega}$ was obtained at the firing temperature of $310^{\circ}C$. The contact resistivity of $1.07m{\Omega}cm^2$ can be calculated from the conditionally optimized sample. With the plating method using Ni / Cu, the efficiency of the solar cell can be expected to increase due to the increase of the electric conductivity and the decrease of the resistance component in the production of the solar cell, and the application to the thin wafer can be expected.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.67-74
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• 2018

Thermoelectric thin film modules were fabricated by electroplating p-type $Sb_2Te_3$and n-type $Bi_2Te_3$ thin film legs with the same thickness of $20{\mu}m$ and different diameters of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$, respectively. The output voltage and output power of thin film modules were measured and compared as a function of the leg diameter. The modules processed with thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter exhibited open circuit voltages of 365 mV at ${\Delta}T=36.7K$, 142 mV at ${\Delta}T=37.5K$, and 53 mV at ${\Delta}T=36.1K$, respectively. Maximum output powers of $845{\mu}W$ at ${\Delta}T=36.7K$, $631{\mu}W$ at ${\Delta}T=37.5K$, and $276{\mu}W$ at ${\Delta}T=36.1K$ were obtained for the modules fabricated with the thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter, respectively.