• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.178-179
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• 2005

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.264-269
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• 2017

To improve heating characteristics of graphite fibers, graphite fibers were copper-plated by electroless plating. The Cu-plated graphite fibers were investigated by thermos-gravimetric analysis in air to calculate quantities of copper on surface of graphite fiber according to plating time. Also, the surface temperature with applied voltage was observed by thermos-graphic camera using a strand of graphite fiber. According to the increment of plating time, the higher quantities of plated copper on graphite fiber were obtained. The electric conductivity of plated graphite fiber for 20 minutes was resulted in 1594.3 S/cm, and surface temperature of this sample showed the maximum temperature $57.2^{\circ}C$. These result could be attributed that copper having great electric conductivity are growing on graphite fiber and followed improving heating characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.193-198
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• 2015

In the study, electroless Ni-plating on flexible ethylene-propylene-diene-monomer (EPDM) rubber sheets for the application of an insert block for shielding electromagnetic interference of multi cable transit (MCT) systems was investigated. Ni crystallinity and adhesion have been found to vary with processing parameters such as pH and temperature of the plating bath. It was shown that Ni-films having the high crystallinity and optimum electric conductivity were obtained on EPDM rubber sheets under pH 7 and 8 at $60{\sim}70^{\circ}C$. The conductive Ni-plated EPDM rubber prepared at pH 7 at $70^{\circ}C$ showed the enhanced adhesion and electric conductivity, and the high electromagnetic interference shielding effect in the 400 MHz~1 GHz range.

• Journal of the Korean Magnetics Society
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• v.21 no.5
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• pp.151-156
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• 2011

The influence of thickness on magnetic interaction and magnetic properties in electrodeposited CoPt magnetic films was investigated from the analysis of the magnetic remanence curves and the magnetic hysteresis loops. As the thickness of the CoPt film is increased, the perpendicular coercivity and the saturation magnetization are increased but the squareness is considerably decreased. The analysis results of the magnetic remanence curves and the magnetic hysteresis loops exhibited that the dipolar interaction is the main interaction mechanism for all samples, but the strength of the dipolar interaction gradually increased with increasing sample thickness.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.193-197
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• 2011

The thickness dependence of the magnetic switching volumes in electrodeposited CoPt films was investigated from the magnetization reversal and the magnetic interaction behavior. As the sample thickness is increased, the field difference between the wall pinning field ($H_{DW}$) and the nucleation field ($H_N$) as well as the absolute value of ${\Delta}$area are increased. Therefore, the decrement tendency of the switching diameter with increasing sample thickness can be well explained by the domain wall motion controlled by the domain wall pinning and the strength of dipolar interaction.

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.128-131
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• 2010

Graphite sheet electro-deposited with lead was evaluated as a possible candidate for current collectors of lead acid batteries. Cyclic voltammetry was performed on the materials to evaluate the electrochemical properties. The graphite sheet electro-deposited with lead is electrochemically stable in the cathodic potential sweep. However, in the anodic potential sweep, the graphite sheet electro-deposited with lead is electrochemically unstable due to the oxygen evolution and the intercalation of sulfuric acid. Lead acid batteries were prepared by using a graphite sheet and a cast grid as current collectors for anode and performance test using those batteries was carried out. A lead acid battery with graphite sheets showed higher capacity and energy density than a conventional lead acid battery with cast grid.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.41-49
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• 2008

Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of $15{\Omega}$ was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.79-84
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• 2010

Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.315-316
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• 2012

전기도금법으로 제조한 $Ni-TiO_2$ 복합체에 교반 속도가 전류효율에 미치는 영향을 연구하였다. 교반은 공기를 불어넣은 공기교반과 자석막대를 회전시킨 자석교반으로 나누어 실시하였다. 교반 속도는 공기교반의 경우에는 0.5, 1.0, 1.5 L/min, 자석교반의 경우에는 100, 200, 300, 400, 500 rpm으로 변화시켜 $Ni-TiO_2$ 복합체의 전류효율과 순수 니켈의 전류효율 변화를 관찰하였다. 순수 니켈의 경우 전류효율이 두 종류의 교반 방식 모두, 속도가 높아질수록 다소 감소하였으나, 그 폭이 크지 않았다. 반면, $Ni-TiO_2$ 복합체의 경우에는 교반 속도가 높아지면, 전류효율이 급격히 감소하였다. 특히, 공기교반의 경우에는 1.0L/min에서 1.5L/min으로 교반속도가 증가하면 전류효율이 크게 감소하였다.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.49-53
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• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.