• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.155-155
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• 1997

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.42-42
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• 1998

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.1
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• pp.31-37
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• 2009

Hybrid ballast for field emission lamp with CNT (carbon nano tube) emitter is proposed. Hybrid ballast consists of a high voltage dc part and hi-polar pulse generation part. Field emission lamp with CNT lamp is composed of three electrodes (anode, gate, and cathode). High voltage dc part is for anode and gate and hi-polar pulse generation part is for gate and cathode in CNT triode respectively. The experimental results demonstrate that the proposed topology is good for driving CNT lamp. To protect the lamp and ballast, OCP (Over Current Protection), OVP (Over Voltage Protection), and OTP (Over Temperature Protection) are added and the experimental results demonstrate that the proposed method is good for driving field emission lamp with CNT emitter.

• Journal of the Korean Society of Propulsion Engineers
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• v.25 no.5
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• pp.36-52
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• 2021

As the application of nano-satellites constellation increases worldwide in the wake of New Space era, there is growing demand for the development of thrusters for precise attitude and orbit control of small satellites. Field Emission Electric Propulsion(FEEP) thruster uses a liquid metal as a propellant and accelerates the ionized liquid metal through a strong electric field at the tip of the metal surface. FEEP thruster technology is suitable for nano-satellites which require various missions for attitude and orbit control, because it provides thrust ranging from 1 µN to 1 mN with high specific impulse up to about 10,000 s and can be miniaturized due to its simple structure. In this paper, the basics of FEEP thrusters are introduced, then the current status of research and development of FEEP thrusters are presented.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.8-15
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• 2007

In this paper, we fabricated the field emitter display using oxidized porous polysilicon(OPPS). Their field emission characteristics and the brightness were investigated for each pixel. The OPPS emitter was operated to each pixel using passive matrix for application of large panel display. We set up the proper thickness and width of upper electrode. The fine structure of OPPS was analyzed and the field emission characteristics of each pixel were investigated. As a result of field emission characteristics of different upper electrode thickness and width, we confirmed that the most efficient thickness was 2nm/7nm and increased the emission efficiency over the width of 2.5 mm. Even if field emission characteristics of each pixel was a little different but we confirmed the same leakage current and emission current, emission efficiency at each pixel. The leakage current and emission current was decreased according to the time increases but all of each pixel were uniformly decreased. We confirmed that the brightness of each pixel was not different and the brightness of OPPS field emitter was 700 cd/m2 at the Vps=20 V. Accordingly, the patterned OPPS field emitter can be applied to high quality field emission display devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.94-94
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.164-164
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• 1998

전채 방출에 의한 이온 몇 전자는 현마갱 몇 마이크로 천자소짜 ( (micro-electronic device)둥에 용용봐 어 왔다. 또한 이 온 몇 천짜의 C Cathod- Anode의 Diode구조에셔의 운동역학이 주요한 환심사이다. 현미 청과 같이 접속율 요하는 장쳐들에셔는 이들의 에녀지 분포가 접속도에 칙첩영향을 주는 Chromatic Abberation을 컬갱하게된다. 그라고 Diode 에셔의 이온 몇 천짜의 운동 또한 에너져훈포에 대한 이혜률 근거로 한 다. 본 연구에셔는 전계에 의한 이온 및 전자의 방출구조(mechanism)률 소채한다. 또한 방출극 표면에셔의 이온 몇 전짜가 갖는 에너져 환포와 양극구조에셔 뱀이 천봐하는 과청에셔의 에너져 환포의 특생용 환석한다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.66-66
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• 1999

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.374-379
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• 2006

In this study, carbon nanotubes (CNTs) were grown on glass substrates coated with Ni/Cr by an atmospheric pressure plasma enhanced chemical vapor deposition(AP-PECVD) and their structural and electrical characteristics were investigated as a possible application to the field emitter of field emission display (FED) devices. The substrate temperature ($400{\sim}500^{\circ}C$) were varied and the grown CNTs were multi wall CNTs (at $500^{\circ}C$, 15 - 20 layers of graphene sheets, distance of each layer : 0.3nm, inner diameter: 10 - 15nm, outer diameter: 30 - 40nm). The ratio of defective carbon peak to graphite carbon peak of the CNTs grown at $500^{\circ}C$ (C measured by fourier transform(FT)-Raman was 0.772 $I_D / I_G$ ratio. When field emission properties were measured, the turn-on field was $2.92V/{\mu}m$ and the emission field at $1mA/cm^2$ was $5.325V /{\mu}m$.