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A Micro Fluxgate Magnetic Sensor with Closed Magnetic Path (폐자로를 형성한 마이크로 플럭스게이트 자기 센서)

  • 최원열;황준식;강명삼;최상언
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.3
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    • pp.19-23
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    • 2002
  • This paper presents a micro fluxgate magnetic sensor in printed circuit board (PCB). In order to observe the effect of the closed magnetic path, the magnetic cores of rectangular-ring and two bars were each fabricated. Each fluxgate sensor consists of five PCB stack layers including one layer magnetic core and four layers of excitation and pick-up coils. The center layer as a magnetic core is made of a Co-based amorphous magnetic ribbon with extremely high DC permeability of ~100,000. Four outer layers as an excitation and pick-up coils have a planar solenoid and are made of copper foil. In case of the fluxgate sensor having the rectangular-ring shaped core, excellent linear response over the range of -100 $\mu$T to + 100 $\mu$T is obtained with 540 V/Tsensitivity at excitation square wave of 3 $V_{p-p}$ and 360 KHz. The chip size of the fabricated sensing element is $7.3 \times 5.7\textrm{mm}^2$. The very low power consumption of ~8 mW was measured. This magnetic sensor is very useful for various applications such as: portable navigation systems, telematics, VR game and so on.n.

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Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) (투과전자현미경과 전자후방산란회절을 이용한 AlN의 미세구조 분석)

  • Joo, Young Jun;Park, Cheong Ho;Jeong, Joo Jin;Kang, Seung Min;Ryu, Gil Yeol;Kang, Sung;Kim, Cheol Jin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.4
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    • pp.127-134
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    • 2015
  • Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

A Study of Electrical Anisotropy of n-type a-plane GaN films grown on $\gamma$-plane Sapphire Substrates ($\gamma$-plane 사파이어 기판 위에 성장한 무분극 ${alpha}$-plane GaN 층의 전기적 비등방성 연구)

  • Kim, Jae-Bum;Kim, Dong-Ho;Hwang, Sung-Min;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.8
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    • pp.1-6
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    • 2010
  • We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.

On the Development of Bonded Joints for Modular FRP Hulls using Moulding-In Concept (모듈방식 FRP 선체를 위한 Moulding-In 개념 기반의 접합 이음부 개발에 관한 연구)

  • Jeong, Han Koo
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.30 no.6
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    • pp.531-539
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    • 2017
  • This paper deals with the development of bonded joints for fibre reinforced plastic (FRP) hull structures using moulding-in concept. Focus is placed on bonded in-plane connections between two adjacent panels that could form the boundaries of hull structural module. Traditional construction in FRP hull structures requires the construction of a mould, usually from steel or aluminium. In this construction the FRP materials are laid in the mould, and resin is saturated, and then the structural member is cured. This is expensive since it involves the fabrication of metal hull mould for every different hull type, which is sacrificed after the production of the FRP ship. One way of encouraging greater use of FRP in ship construction is to investigate the possible construction of FRP hull structures in a similar manner to metallic ships, that is in terms of blocks or modules. Such a manner of construction would eliminate the need for expensive hull moulds permitting greater flexibility in the construction of FRP ships. The main issue then would be the design and construction of adequate bonded connections between adjacent panels. To fulfill this object, the simplified and automated way of manufacturing joint edge shapes for bonded joints is developed, and their structural assessment is performed in both experimentally and numerically.

Large-strain Soft Sensors Using Elastomers Blended with Exfoliated/Fragmented Graphite Particles (탄성중합체와 박리 후 파쇄된 흑연입자 복합재를 이용한 대변형률 연성 센서)

  • Park, Sungmin;Nam, Gyungmok;Kim, Jonghun;Yoon, Sang-Hee
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.40 no.9
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    • pp.815-820
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    • 2016
  • An elastic polymer (e.g., PDMS) blended with EFG particles is a promising conductive composite for fabricating soft sensors that can detect an object's deformation up to or more than 50%. Here, we develop large-strain, sprayable soft sensors using a mixture of PDMS and EFG particles, which are used as a host elastomer and electrically conductive particles, respectively. A solution for a conductive composite mixture is prepared by the microwave-assisted graphite exfoliation, followed by ultrasonication-induced fragmentation of the exfoliated graphite and ultrasonic blending of PDMS and EFG. Using the prepared solutions for composite and pure PDMS, 1-, 2-, and 3-axis soft sensors are fabricated by airbrush stencil technique where composite mixture and pure PDMS are materials for sensing and insulating layers, respectively. We characterize the soft strain sensors after investigating the effect of PDMS/EFG wt% on mechanical compliance and electrical conductance of the conductive composite.

Late Quaternary Transgressive Stratigraphy and its Depositional History in the Southeastern Continental Shelf, Korea (한국 남동해역 대륙붕 후 제4기 해침퇴적층서 및 퇴적역사)

  • Yoo, Dong-Geun;Lee, Chi-Won;Kim, Seong-Pil;Park, Soo-Chul
    • Geophysics and Geophysical Exploration
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    • v.13 no.4
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    • pp.349-356
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    • 2010
  • Analysis of high-resolution seismic profiles acquired from the southeastern continental shelf of Korea reveals that the late Quaternary transgressive deposits consist of six seismic units created in response to sea-level rise. These units with different seismic facies and geometry can be grouped into two distinct depositional wedges (paralic and marine) bounded by a ravinement surface. The paralic component underlying the ravinement surface consists of the sediment preserved from shoreface erosion and contains incised-channel fill, ancient beach-shoreface deposit and estuarine deposit. The top of paralic unit is truncated by a ravinement surface and overlain by marine component. The marine component consists of the sediment produced through shoreface erosion during landward transgression and contains mid-shelf sand sheet, mid-shelf sand ridge and inner shelf sand sheet. Such transgressive stratigraphic architecture of six sedimentary units is controlled by a function of lateral changes in the balance among rates of relative sea-level rise, sediment input and marine processes at any given time.

Preparation and Properties of Organic Electroluminescent Devices (유기 전계발광소자의 제작과 특성 연구)

  • 노준서;장호정
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.1
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    • pp.9-13
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    • 2002
  • Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

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Investigation of a nonreciprocal phase shift properties of optical waveguide isolators with a magneto-optic layer (자기 광학적층을 갖는 광 도파로 아이솔레이터 제작을 위한 비가역적 위상변위에 대한 연구)

  • Yang, Jeong-Su;Kim, Young-Il;Byun, Young-Tae;Woo, Deok-Ha;Lee, Seok;Kim, Sun-Ho;Yi, Jong-Chang
    • Korean Journal of Optics and Photonics
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    • v.14 no.2
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    • pp.142-145
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    • 2003
  • The nonreciprocal phase shift characteristics of infinite slab optical waveguides with magneto-optic materials in the cladding layer was calculated at 1.55 ${\mu}{\textrm}{m}$ for optical isolators. The infinite slab waveguide structures considered in this paper were as follows. rho magneto-optic materials used as a cladding layer were Ce:YIG and LNB(LuNdBi)$_3$(FeAl)$_{5}$)$_{12}$,). Their specific Faraday rotations Θ$_{F}$ are 4500$^{\circ}$/cm, 500$^{\circ}$/cm at wavelength 1.55 ${\mu}{\textrm}{m}$ respectively. The guiding layer with multi-quantum well structure was used, and it consists of 1.3Q and InGaAs. In order to investigate the effect of evanescent field penetrating the cadding, layer, guiding mode characteristics were calculated for the cases when the substrate is InP and air. We calculated the minimum lengths of 90$^{\circ}$ nonreciprocal phase shifters and their optimum guiding layer thicknesses in various optical waveguide structures.res.s.

High Frequency Magnetic Characteristics of $Co_{90}Fe_{10}$ Thin Films and $Co_{90}Fe_{10}/SiO_2$ Multilayers ($Co_{90}Fe_{10}$ 박막 및 $Co_{90}Fe_{10}/SiO_2$ 다층박막의 고주파 자기특성)

  • 윤의중;진현준;박노경;문대철;김좌연
    • Journal of the Korean Magnetics Society
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    • v.8 no.5
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    • pp.300-307
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    • 1998
  • The $Co_{90}Fe_{10}$ single layer films were deposited on various substrates (glass, Si, polymide) using high vacuum RF magnetron sputtering system and nominall 1000 $\AA$ thick $Co_{90}Fe_{10}$ alloy films had a good high frequency characteristic. $M_S$ and $H_{an}$ values obtained from the B-H characteristic of the $10{\times}[100 nm \;Co_{90}Fe_{10}/100 nm\; SiO_2]$ multilayers agreed well with those obtained by calculation. Complex relative permeability $(={\{\mu}_r={\mu}_r',-j{\mu}$\mu$_r")$ at frequency f was measured from the transmission characteristics $(S_{11},\; S_{21}\;parameters)$ of the microstrip line which has a stacked structure consisting of sample magnetic films and a conductor and is connected to a network analyzer. The ${\mu}_r'-f$ characteristic was abtained from the megnetic absorption, which was analyzed from the S-parameter characteristics of the microstrip line. The ${\mu}_r'-f$ characteristic was also calculated from the ${\mu}_r"-f$-f characteristic using the Kramers-Kronig relation. The measurement results were confirmed to agree well with those obtained by calculations.culations.

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Mineralogical Characteristics of Tosudites from the Sungsan and Bubsoo Mines, Korea (성산광산과 법수광산에서 산출되는 토수다이트의 광물학적 특성)

  • Cho, Hyen-Goo;Kim, Won-Sa
    • Journal of the Mineralogical Society of Korea
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    • v.6 no.1
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    • pp.17-26
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    • 1993
  • Mineralogical characteristics of tosudite from the Sungsan and Bubson mines were studied and correlated using X-ray diffraction analysis, chemical analysis and electron microscopy. Tosudite occurs as an alteration product of Cretaceous volcanoclastic rocks in both mines. It is associated with microcrystalline quartz, dickite, illite/smectite or mica/smectite mixed-layer mineral. It forms cryptocrystalline aggregates with flaky habit. XRD analysis suggests that tosudite is an 1:1regularly interstratified dioctahedral smetite/dioctahedral chlorite. Bubsoo tosudite has more(00ℓ ) reflections and more periodice stacking sequence than Syngsan tosudite. Chemical analysis shows that tosudite is a Li-bearing aluminous 1:1 regularly interstrattified mineral composed of K-bedellite and donbassite. Cookeite component may be present in the chlorite layer. Bubsoo tosudite is more Al in tetrahedral site and Ca in interlayer, but less Al in octahedral site than Sugsan tosudite. Tosudite may be formed as the intermediate alteration products, forming after muscovite and before illite/smectite or mica/s$^{\circ}C$mectite, with the range from 100 $^{\circ}C$ to 360 ~ 480 $^{\circ}C$. The hydrothermal solution forming tosudite may be acidic solution with high activities of Si and Al.

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