• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.50-58
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• 2002

The growth of GaN films on Si substrate has many advantages in that Si is less expensive than sapphire substrate and that integration of GaN-based devices with Si substrate is easier The difference of lattice constant and thermal expansion coefficient between GaN and Si is larger than those between GaN and sapphire. However, which results in many defects into the grown GaN. In order to obtain high duality GaN films on Si substrate, we need to reduce defects using the buffer layer such as AlN. In this study, we prepared three types of AlN buffer layer with various crystallinity on Si (111) substrate using MOCVD, Sputtering and MOMBE methods. GaN was grown by MOCVD on three types of AlN/Si substrate. Using TEM and XRD, we carried out comparative investigation of growth and properties of GaN deposited on the various AlN buffers by characterizing lattice coherency, crystallinity, growth orientation and defects formed (voids, stacking faults, dislocations, etc). It is found that the crystallinity of AlN buffer layer has strong effects on growth of GaN. The AlN buffer layers grown by MOCVD and MOMBE showed the reduction of out-of-plane misorientation of GaN at the initial growth stage.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.1
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• pp.1-5
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• 1968

GaAs single crystals were grown epitaxially from Ga solution with carrier concentrations in the range and electron mobilities between 7,500 and 9,300$\textrm{cm}^2$/v-sec. at 300$^{\circ}$K, and 50,000 and 95,000 $\textrm{cm}^2$/V-sec. at 77$^{\circ}$K. A comparison of the theoretical and experimental curves for the mobility vs. temperature indicates that the significant scattering mechanisms are ionized impurities and phonons in the temperature range of 77$^{\circ}$K to 439$^{\circ}$K. This indicates that the epitaxial layers do not contain other mobility limiting imperfections to a significant degree. Photoluminescence spectra of the. epitaxial layers did not show any emission due to deep lying imperfection leve1s.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.157-161
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• 1999

We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.170-177
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• 2012

Amethyst gems represents thermal effects of far-infrared emission, promotes the body's metabolism, and attracts attention as an eco-friendly interior material. In this paper, amethyst increase the value of jeweling by applying the characteristic purple motif, furthermore, I will intend to develop of design model. Metal crafting of brooch & necklace in the works performed based on the organic three-dimensional shape of the Rhino CAD Data. It was made possible through the precise laminated wax processing and then combining the amethyst. I researched the ornament modeling by applying the 'Golden Ratio', and suggesting utilizing method for interior jewel modeling, and also, is expected that this paper on the amethyst modeling design can contribute to the manufacturers' productivity.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06b
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• pp.185-217
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• 1996

Pb(Mg1/3Nb2/3)O3은 높은 유전율과 전기저항 및 유전율의 온도변화율이 적은 Pb계 relaxor의 대표적인 재료로서 적층 세라믹 콘덴서 재료에의 응용이 크게 기대되고 있다. 그러나 산화물 분말을 이용하는 일반적인 세라믹스 합성방법으로는 Pb(Mg1/3Nb2/3)O3의 단일상의 합성이 어렵고, 합성과정에서 저유전율상인 pyrochlore상이 합성이 어렵고, 합성과정에서 저유전율상인 pyrochlore상이 공존하여 Pb(Mg1/3Nb2/3)O3의 전기적 특성을 저하시킨다. 본연구에서는 용액을 이용하여 Pb(Mg1/3Nb2/3)O3의 단일상을 합성하고자 하였다. 출발물질로는 값싼 금속염인 Niobium Oxalate, magnesium Nitrate 및 Lead Nitrate를 선정하고 증류수에 용해하여 혼합용액을 제좋고, 합성방법으로는 초음파 분무 열분해법과 에멀젼법을 이용하였다. 초음파 분무 열분해법에서는 75$0^{\circ}C$에서 합성한 분말을 다시 75$0^{\circ}C$에서 하소하여 Pb(Mg1/3Nb2/3)O3 단일상을 합성할 수 있었으며, 에멀젼법에서는 80$0^{\circ}C$에서 Pb(Mg1/3Nb2/3)O3 단일상을 합성할 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.9
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• pp.1337-1343
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• 2004

Shape optimization was performed to obtain a precise shape of cutouts including the internal shape of cutouts in a laminated composite plate by three dimensional modeling using solid element. Volume control of the growth-strain method was implemented and the distributed parameter chosen as Tsai-Hill fracture index for shape optimization. It makes Tsai-Hill failure index at each element uniform in laminated composites under the predetermined volume a designer requires. Shapes optimized by Tsai-Hill failure index were compared with those of the initial shapes for the various load conditions and cutouts. The following conclusions were obtained in this study; (1) It was found that growth-strain method was applied efficiently to shape optimization of three dimensional cutouts in a laminate composite, (2) The optimal shapes of the various load conditions and cutouts were obtained, (3) The maximum Tsai-Hill failure indices of the optimal shapes were remarkably reduced comparing with those of the initial shapes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.172-173
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• 2015

3D 프린터를 이용하면 짧은 시간에 복잡한 3차원 형상을 제작하는 것이 가능하며 적층하는 횟수를 조절하여 제작물의 크기와 모양, 두께를 쉽게 조절할 수 있다. 또한, 표면 열처리 기술을 적용하여 열로 표면을 처리하게 되면 매끄러운 표면 도출과 함께 외부 충격에 대한 내구성 및 접착력을 향상시킬 수 있다. 이러한 표면처리 기술은 촉각패턴과 표면과의 접착력의 제어가 가능하기 때문에 종이뿐만 아니라, 플라스틱, 금속, 세라믹 등 다양한 소재로 이루어진 표면에 적용이 가능하다. 따라서 본 연구에서 제안하는 3D 프린팅 기술과 표면 열처리 방식을 이용하면 기존의 점자 제작 방식을 개선할 수 있으며 기존 방법으로 표현하기 어려웠던 교과서 내에 삽입된 다양한 유물이나 동식물의 성장 과정 모델 등의 학습 자료를 입체적으로 만들 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.144-144
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• 2010

다결정 실리콘 박막트랜지스터 (poly-Si TFTs)는 벌크실리콘을 이용한 MOSFET소자에 비해 실리콘 박막의 형성이 간단하므로 대면적의 공정이 가능하며 다양한 기판위에 적용이 가능하여 LCD, OLED 등의 디스플레이 기기에 많이 이용되고 있다. 또한 poly-Si TFT는 3차원으로 적층된 소자의 제작이 가능하여 고집적의 한계를 극복할 소자로 주목받고 있다. 최근, DRAM은 캐패시터의 축소화와 구조적 공정이 한계점에 도달했으며 이를 극복하기 위하여 SOI 기판을 사용한 하나의 트랜지스터로 DRAM의 동작을 수행하는 1T-DRAM의 연구가 활발히 진행 중이다. 이러한 1T-DRAM 소자를 대면적과 다층구조의 공정이 가능한 poly-Si TFT를 이용하여 구현하면 초고집적의 메모리 소자를 제작 가능할 것이다. 따라서, 본 연구에서는 다결정 실리콘 박막트랜지스터 (poly-Si TFTs)를 이용한 1T-DRAM의 동작 특성을 연구하였다. 소자의 제작 방법으로는 200 nm의 열산화막이 성장된 p-type 실리콘 기판위에 상부실리콘으로 사용될 비정질 실리콘 박막을 LPCVD 방법으로 증착하였다. 다음으로 248 nm의 파장을 가지는 KrF 레이저를 이용한 eximer laser annealing (ELA) 공정을 통하여 결정화된 상부실리콘층에 TFT 소자를 제작하여 전기적 특성을 평가하였다.

• Composites Research
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• v.14 no.5
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• pp.46-53
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• 2001

In this research, damage behavior of singly oriented ply (SOP) fiber metal laminate (FML) subjected to concentrated load was studied. The static indentation tests were conducted to study fiber orientation effect on damage behavior of FML. During the static indentation tests, acoustic emission technique (AE) was adopted to study damage characteristics of FML. AE signals were obtained by using AE sensor with 150kHz resonance frequency and the signals were compared with indentation curves of FML. The damage process of SOP FML was divided by three parts, i.e., crack initiation, crack propagation, and penetration. The AE characteristics during crack initiation show that the micro crack is initiated at lower ply of the plate, then propagate along the thickness of the plate with creating tiber debonding. The crack grow along the fiber direction with occurring 60∼80dB AE signal. During the penetration, the fiber breakage was observed. As fiber orientation increases, talc fiber breakage occurs more frequently. The AE signal behaviors support these results. Cumulative AE counts could well predict crack initiation and crack propagation and AE amplitude were useful for the prediction of damage failure mode.